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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Novel Biomedical Device Utilizing Light-Emitting Nanostructures Developed

Sketches and chemical diagrams of state-of-the-art device and novel proposed device are presented. Current device uses a diode laser that emits into a fluorescent fluid only one wavelength and a photodetector diode that detects only one wavelength. Only one type of bacteria can be detected. The proposed device uses a quantum dot array that emits into a fluorescent fluid multiple wavelengths and an NIR 512 spectrometer that scans 0.8- to 1.7-mm wavelengths. Hundreds of different bacteria and viruses can be detected. A novel biomedical device is being developed at the NASA Glenn Research Center in cooperation with the University of Michigan. This device uses nano-structured quantum dots that emit light in the near-infrared (IR) region. The nanostructured quantum dots are used as a source and excite fluorochrome polymers coupled with antibodies that seek out and attach to specific bacteria and viruses. The fluorochrome polymers/antibodies fluoresce at specific wavelengths in the near-IR spectrum, but these wavelengths are offset from the excitation wavelength and can be detected with a tunable spectrometer. The device will be used to detect the presence of viruses and bacteria in simple fluids and eventually in more complex fluids, such as blood. Current state-of-the-art devices are limited to single bacteria or virus detection and a considerable amount of time and effort is required to prepare samples for analysis. Most importantly, the devices are quite large and cumbersome, which prohibits them from being used on the International Space Station and the space shuttles. This novel device uses nanostructured quantum dots which, through molecular beam epitaxy and highly selective annealing processes, can be developed into an illumination source that could potentially generate hundreds of specific wavelengths. As a result, this device will be able to excite hundreds of antibody/fluorochrome polymer combinations, which in turn could be used to detect hundreds of bacteria and viruses in fluids. A novel sample preparation technique that exploits micromembrane filtration and centrifugation methods has been developed for this device. The technique greatly reduces the time required to prepare the sample and the amount of sample needed to perform an accurate and comprehensive analysis. Last, and probably most important, because of the nano-light-emitting source and the novel sample preparation technique, the overall size of the device could be reduced dramatically. This device will serve as a nanoscale lab-on-a-chip for in situ microorganism detection and will enable tests to be performed on a time scale of minutes rather than days. Thus, it is ideally suited for monitoring the environmental conditions onboard the International Space Station and the space shuttles, thereby enhancing the safety of the astronauts. In addition, the device has important commercial applications, such as detecting the presence of bacteria and viruses in water at food- and beverage-processing centers, water treatment plants, and restaurants. Also, this technology has the potential to be used to detect bacteria and viruses in more complex fluids, such as blood--which in all likelihood would revolutionize blood analysis as it is performed today. This project was made possible through the Director's Discretionary Fund and is ongoing. In addition, this project provides funding to Dr. Rachel Goldman of the University of Michigan for the research and development of nanostructured quantum dots.

Scardelletti, Maximilian C.↗
NASA NTRS2018

A Blueprint for Demonstrating Quantum Supremacy with Superconducting Qubits

Long coherence times and high fidelity control recently achieved in scalable superconducting circuits paved the way for the growing number of experimental studies of many-qubit quantum coherent phenomena in these devices. Albeit full implementation of quantum error correction and fault tolerant quantum computation remains a challenge the near term pre-error correction devices could allow new fundamental experiments despite inevitable accumulation of errors. One such open question foundational for quantum computing is achieving the so called quantum supremacy, an experimental demonstration of a computational task that takes polynomial time on the quantum computer whereas the best classical algorithm would require exponential time and/or resources. It is possible to formulate such a task for a quantum computer consisting of less than a 100 qubits. The computational task we consider is to provide approximate samples from a non-trivial quantum distribution. This is a generalization for the case of superconducting circuits of ideas behind boson sampling protocol for quantum optics introduced by Arkhipov and Aaronson. In this presentation we discuss a proof-of-principle demonstration of such a sampling task on a 9-qubit chain of superconducting gmon qubits developed by Google. We discuss theoretical analysis of the driven evolution of the device resulting in output approximating samples from a uniform distribution in the Hilbert space, a quantum chaotic state. We analyze quantum chaotic characteristics of the output of the circuit and the time required to generate a sufficiently complex quantum distribution. We demonstrate that the classical simulation of the sampling output requires exponential resources by connecting the task of calculating the output amplitudes to the sign problem of the Quantum Monte Carlo method. We also discuss the detailed theoretical modeling required to achieve high fidelity control and calibration of the multi-qubit unitary evolution in the device. We use a novel cross-entropy statistical metric as a figure of merit to verify the output and calibrate the device controls. Finally, we demonstrate the statistics of the wave function amplitudes generated on the 9-gmon chain and verify the quantum chaotic nature of the generated quantum distribution. This verifies the implementation of the quantum supremacy protocol.

Kechedzhi, Kostyantyn↗
NASA NTRS1998

Genetically Engineered Nanostructure Devices

Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs).

NEMO↗
NASA NTRS2003

Synthesis and Characterization of Chalcopyrite (CuInS2 and CuhInSe2) Colloidal Nanoparticles for Optoelectronic Applications via Low-Temperature Pyrolysis of Single-Source Precursors

Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar ~sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.

Castro, S. L.↗
NASA NTRS1990

Nitric Oxide Enhances Charge-Coupled Device

Simple treatment increases and stabilizes quantum efficiency of charge-coupled-device photodetector illuminated on back surface at wavelengths less than 4,500 Angstrom. Must be biased in strong accumulation mode. Physical principle of enhancement explained more fully in "Metal Film Increases CCD Output" (NPO-16815). Useful for imaging at wavelengths from ultraviolet to blue; for example, in astronomical observations.

Hecht, Michael H.↗
NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗
NASA NTRS1980

Comparative performance of HgCdTe photodiodes for heterodyne application

Photodiodes used as photomixers in heterodyne applications display quantum efficiencies that are lower than the dc quantum efficiency of the device. Measurement techniques used to obtain dc quantum efficiencies, midband heterodyne quantum efficiencies, and frequency roll off characteristics are described. Measurement results for two HgCdTe photodiodes are given and discussed. It is recommended that photodiodes used in heterodyne applications be tested for heterodyne quantum efficiency over the frequency band of interest for the particular application.

Kowitz, H. R.↗
NASA NTRS1989

Metal Film Increases CCD Quantum Efficiency

Thin layer of platinum or other high-work-function metal applied to back side of rear-illuminated charge-coupled device (CCD) achieves quantum efficiency (QE)-pinned state, an ideal condition allowing sensor to achieve 100-percent internal charge-collection efficiency within its photosensitive volume. Metal layer, called flash gate, easily applied by tungsten vacuum deposition during last step of sensor fabrication.

Janesick, James R.↗
NASA NTRS2006

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

infrared imaging↗
NASA NTRS2000

Sixth International Conference on Squeezed States and Uncertainty Relations

These proceedings contain contributions from about 200 participants to the 6th International Conference on Squeezed States and Uncertainty Relations (ICSSUR'99) held in Naples May 24-29, 1999, and organized jointly by the University of Naples "Federico II," the University of Maryland at College Park, and the Lebedev Institute, Moscow. This was the sixth of a series of very successful meetings started in 1990 at the College Park Campus of the University of Maryland. The other meetings in the series were held in Moscow (1992), Baltimore (1993), Taiyuan P.R.C. (1995) and Balatonfuered, Hungary (1997). The present one was held at the campus Monte Sant'Angelo of the University "Federico II" of Naples. The meeting sought to provide a forum for updating and reviewing a wide range of quantum optics disciplines, including device developments and applications, and related areas of quantum measurements and quantum noise. Over the years, the ICSSUR Conference evolved from a meeting on quantum measurement sector of quantum optics, to a wide range of quantum optics themes, including multifacet aspects of generation, measurement, and applications of nonclassical light (squeezed and Schrodinger cat radiation fields, etc.), and encompassing several related areas, ranging from quantum measurement to quantum noise. ICSSUR'99 brought together about 250 people active in the field of quantum optics, with special emphasis on nonclassical light sources and related areas. The Conference was organized in 8 Sections: Squeezed states and uncertainty relations; Harmonic oscillators and squeeze transformations; Methods of quantum interference and correlations; Quantum measurements; Generation and characterisation of non-classical light; Quantum noise; Quantum communication and information; and Quantum-like systems.

Han, D.↗
NASA NTRS1997

Quantum cascade light emitting diodes based on type-2 quantum wells

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Light Emitting Diodes↗
NASA NTRSDate not supplied

Independent Technical Assessment of NASA and External Quantum Sensing Capability

The recent FY 2020 federal Research and Development Budget Priorities memo addresses the leadership need in Quantum Information Science (QIS) directing agencies to “prioritize QIS research and development (R&D), which will build the technical and scientific base necessary to explore the next generation of QIS theory, devices, and applications.” Quantum Sensing (QS) is an integral part of QIS. NASA is a key part of the directive to forward American space exploration and commercialization by providing “capabilities that have broad potential applications in space and on Earth.” QS provides an arena for NASA to demonstrate leadership in both areas of the administrative directive. QS uses quantum properties to achieve unprecedented measurement sensitivity and performance, including quantum-enhanced methodologies that outperform their classical counterparts. Typical quantum sensors exploit techniques such as atomic systems, matter waves, quantum entanglement, quantum superposition of states, quantum illumination methods, and manipulation of photons and atoms, in general. Guided by advancements in our ability to generate, manipulate, and control quantum systems, the emerging quantum sensing technologies promise unrivalled sensitivity, resolution, and precision, potentially leading to game-changing applications. Significant gains include technologies important for a range of NASA missions such as remote sensing, in situ measurements, metrology, interferometry, quantum communication, ranging, imaging, radar and lidar receivers, and gravity measurements. NASA Engineering and Safety Center has convened an independent external panel, comprising of Quantum Sensing Experts from Government, DoD, academia, and Federally funded Research and Development Center to conduct an independent technical assessment of the agency's capabilities in Quantum Sensing to understand NASA's internal needs and competencies related to Quantum Sensing and compare agency capabilities with those available externally including industry, academia, and other government agencies. The outcomes of the assessment will help the agency in establishing appropriate strategies and investments to develop and maintain the state-of-the-art sensing competence and capabilities required to meet the agency’s future needs. The External Experts Panel (EEP) is collaborating with HQ, various NASA Center and the representatives in the NASA Quantum Sensing Community of Practice (QS CoP), a part of NASA Sensors and Instrumentation Technical Fellow Technical Discipline Team, in obtaining common, current understanding of agency mission needs where QS can be an important enabler for future needs, and any programs, projects, assets, and technologists working in QS. The EEP organized a Quantum Sensing Workshop of practitioners from industry, academia, other government agencies, external experts, and interested NASA personnel to gather the assessment information. EEP also conducted information gathering on the industry at large, educational institutions, and other government agency research efforts for capture in the assessment database. At the conclusion of this assessment, EEP team will develop findings and conclusions describing NASA’s capabilities for the mission needs, NASA's relative position on new, enabling technologies, and an analysis of the gaps that may present any risks to near-term or far-term mission needs. This presentation will give details of the NASA and External Quantum Sensing Assessment outcomes, findings, observations, and its recommendation to NASA as how it can advance Quantum Sensing technologies and techniques for its science and explorations related missions.

External Quantum Sensing Capability↗
NASA NTRS1996

Scaling Properties of Algorithms in Nanotechnology

At the present time, several technologies are pressing the limits of microminiature manufacturing. In semiconductor technology, for example, the Intel Pentium Pro (which is used in the Department of Energy's ASCI 'red' parallel supercomputer system) and the DEC Alpha 21164 (which is used in the CRAY T3E) both are fabricated using 0.35 micron process technology. Recently Texas Instruments (TI) announced the availability of 0.25 micron technology chips by the end of 1996 and plans to have 0.18 micron devices in production within two years. However, some significant challenges lie down the road. These include the skyrocketing cost of manufacturing plants, the 0.1 micron foreseeable limit of the photolithography process, quantum effects, data communication bandwidth limitations, heat dissipation, and others. Some related microminiature technologies include micro-electromechanical systems (MEMS), opto-electronic devices, quantum computing, biological computing, and others. All of these technologies require the fabrication of devices whose sizes are approaching the nanometer level. As such they are often collectively referred to with the name 'nanotechnology'. Clearly nanotechnology in this general sense is destined to be a very important technology of the 21st century. The ultimate dream in this arena is 'molecular nanotechnology', in other words the fabrication of devices and materials with most or all atoms and molecules in a pre-programmed position, possibly placed there by 'nano-robots'. This futuristic capability will probably not be achieved for at least two decades. However, it appears that somewhat less ambitious variations of molecular nanotechnology, such as devices and materials based on 'buckyballs' and 'nanotubes' may be realized significantly sooner, possibly within ten years or so. Even at the present time, semiconductor devices are approaching the regime where quantum chemical effects must be considered in design.

Saini, Subhash↗
NASA NTRS1993

Stable vacuum UV CCD detectors designed for space flight experiments

Thinned, backside-illuminated, p-channel CCD images are under development which can exploit the surface potential in VUV applications, yielding enhanced quantum efficiency to wavelengths as short as 1100 A. The current goal is production of large-format, 5-micron pixel imagers for spectrographic and imaging VUV spaceflight experiments. Model predictions of the effect of device design on quantum efficiency, well capacity, and crosstalk are presented for such 5-micron-approaching pixel sizes.

Socker, Dennis G.↗
NASA NTRS1979

Design, fabrication, and delivery of a charge injection device as a stellar tracking device

Six 128 x 128 CID imagers fabricated on bulk silicon and with thin polysilicon upper-level electrodes were tested in a star tracking mode. Noise and spectral response were measured as a function of temperature over the range of +25 C to -40 C. Noise at 0 C and below was less than 40 rms carriers/pixel for all devices at an effective noise bandwidth of 150 Hz. Quantum yield for all devices averaged 40% from 0.4 to 1.0 microns with no measurable temperature dependence. Extrapolating from these performance parameters to those of a large (400 x 400) array and accounting for design and processing improvements, indicates that the larger array would show a further improvement in noise performance -- on the order of 25 carriers. A preliminary evaluation of the projected performance of the 400 x 400 array and a representative set of star sensor requirements indicates that the CID has excellent potential as a stellar tracking device.

Burke, H. K.↗
NASA NTRS1989

HgCdTe 256x256 NWIR FPA

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Vural, Kadri↗
NASA NTRS1991

Multiple-Quantum-Well Intersubband Infrared Detector

Proposed multiple-quantum-well intersubband semiconductor device detects photons over broader range of wavelengths. Device is stack of substacks, each of which contains quantum-well layers sensitive to different narrow band of wavelengths. Bandwidth and detectivity increased.

Borenstain, Shmuel I.↗