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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,747 records · Page 97
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Controlled vapor growth of small particles of Pd and Fe on thin Al2O3 substrates

An exploratory study, dealing with the preparation of well-defined particulate metal deposits that can be used in model studies of catalytic reactions, was performed. Small metal particles of Fe and Pd were grown in situ in an electron microscope by vapor deposition onto different phase of electron transparent alumina substrates. The results show that characteristic properties of the deposits, such as particle density, size distribution, habit, and orientation, are strongly dependent on the cleanliness, phase, and crystallographic orientation of the alumina substrate; also, the deposition conditions can be chosen in such a way as to reproducibly manipulate the overall deposit structure.

Poppa, H.↗
NASA NTRS1979

Controlled metal-film deposition on alumina substrates

Report describes results of investigation of preparation, nucleation and controlled growth of particulate deposits (palladium and iron) on electron-transparent alumina substrates. Results indicate that characteristic properties of metal deposits are strongly dependent on cleanliness, phase, and crystallographic orientation of substrate.

Lee, E. H.↗
NASA NTRS1979

Polycrystalline silicon on tungsten substrates

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Bevolo, A. J.↗
NASA NTRS1978

Epitaxial solar cells on low-cost silicon substrates

This work is directed toward a low-cost approach to the fabrication of silicon solar cells and combines the advantages and flexibility of the epitaxial technique with the use of potentially low-cost silicon substrates. Epitaxial graded base n/p/p+ solar cell structures were grown and evaluated on various forms of polycrystalline and metallurgical grade silicon as well as single crystal substrates. X-ray topographic techniques have shown improvements in the crystallographic quality of the layer grown on polycrystalline material.

Robinson, P. H.↗
NASA NTRS1981

Passivation layer for steel substrate of solar cell

Solar cell is fabricated on commerical sheet-steel substrate passivated with tungsten layer. Layer prevents constituents of steel from interacting with semiconductor materials in MOS thin-film solar cell. Thin plating of nickel on steel improves bonding of tungsten. Use of steel as substrate reduces materials cost of solar cell construction.

Stirn, R. J.↗
NASA NTRS1979

Investigation into the effect of plasma pretreatment on the adhesion of parylene to various substrates

A procedure is described for using argon and oxygen plasmas to promote adhesion of parylene coatings upon many difficult-to-bond substrates. Substrates investigated were gold, nickel, kovar, teflon (FEP), kapton, silicon, tantalum, titanium, and tungsten. Without plasma treatment, 180 deg peel tests yield a few g/cm (oz/in) strengths. With dc plasma treatment in the deposition chamber, followed by coating, peel strengths are increased by one to two orders of magnitude.

Riley, T.↗
NASA NTRS1979

Development of Mullite Substrates and Containers

The mullite-molten silicon interaction was evaluated through fabrication of a series of bodies made with variations in density, alumina-silica ratio, and glass-crystalline ratio. The materials were tested in a sessile drop technique. None of the variations stood up to extended exposure to molten silicon sufficiently to be recommended as a container material. However, directional solidification experiments suggest that, under proper conditions, contamination of the silicon by mullite containers can be minimized. To improve an already good thermal expansion match between mullite and silicon, compositional variations were studied. Altering of the alumina-silica ratio was determined to give a continuously varying thermal expansion. A standard mullite composition was selected and substrates 40 x 4 x .040 inches were fabricated. Slotted substrates of various configurations and various compositions were also fabricated.

Sibold, J. D.↗
NASA NTRS1980

Use of Glass Reinforced Concrete (GRC) as a substrate for photovoltaic modules

A substrate for flat plate photovoltaic solar panel arrays using a glass fiber reinforced concrete (GRC) material was developed. The installed cost of this GRC panel is 30% less than the cost goal of the Near Term Low-Cost Flat Plate Photovoltaic Solar Array Program. The 4 ft by 8 ft panel is fabricated from readily available inexpensive materials, weighs a nominal 190 lbs., has exceptionally good strength and durability properties (rigid and resists weathering), is amenable to mass production and is easily installed on simple mountings. Solar cells are encapsulated in ethylene/vinyl acetate with Tedlar backing and Korad cover film. The laminates are attached to the GRC substrate with acrylic transfer tape and edge sealed with silicone RTV adhesive.

Eirls, J. L.↗
NASA NTRS1980

A cellular glass substrate solar concentrator

The design of a second generation point focusing solar concentration is discussed. The design is based on reflective gores fabricated of thin glass mirror bonded continuously to a contoured substrate of cellular glass. The concentrator aperture and structural stiffness was optimized for minimum concentrator cost given the performance requirement of delivering 56 kWth to a 22 cm diameter receiver aperture with a direct normal insolation of 845 watts sq m and an operating wind of 50 kmph. The reflective panel, support structure, drives, foundation and instrumentation and control subsystem designs, optimized for minimum cost, are summarized. The use of cellular glass as a reflective panel substrate material is shown to offer significant weight and cost advantages compared to existing technology materials.

Bedard, R.↗
NASA NTRS1982

High-Efficiency Solar Cells on Low-Cost Substrates

High-efficiency solar cells made in thin epitaxial films grown on low-cost commercial silicon substrates. Cost of cells is much less than if high-quality single-crystal silicon were used for substrates and performance of cells is almost as good.

Daiello, R. V.↗
NASA NTRS1983

Wipe Melt for InP Seed Substrate

Seed substrate pulled under InGaAsP wipe melt at temperature of 650 degrees C for approximately 15 to 60 seconds. After pullthrough and meltback, surface has high smoothness and luster without meniscus lines, exaggerated erosion, pits, and pearls characteristic of other wipe melts. Layer-to-substrate interface structure is more planar and of better quality. New combination of elements leaves smooth high luster surface.

Hawrylo, F. Z.↗
NASA NTRS1981

Investigation into the role of NaCl deposited on oxide and metal substrates in the initiation of hot corrosion

Morphological aspects of the conversion to Na2SO4 of NaCl deposits over the temperature range 500-700 C, in air with added SO2 and H2O. Progress of the reaction was observed by withdrawing samples at various times and examining them under the scanning electron microscope using EDAX to assess the extent of chloride to sulfate conversion. These initial results show that the conversion to Na2SO4 proceeds directly on the sodium chloride surface as well as on the surrounding substrate due to evaporation of NaCl from the solid particle. The mechanism of this reaction could involve reaction in the vapor to produce Na2SO4 which then deposits, alternatively Na2SO4 could form directly on the substrate surface due to direct reaction there between the vapors NaCl, SO2 and O2.

Birks, N.↗
NASA NTRS1982

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Yeh, Y. C. M.↗
NASA NTRS1983

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

Vasquez, R. P.↗
NASA NTRS1983

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

Vasquez, R. P.↗
NASA NTRS1985

Characteristic Impedance of a Wide Slot Line on Low Permittivity Substrates

Computed results on the characteristic impedance of wide slots etched on an electrically thin substrate of low dielectric constant epsilon sub r are presented. Results are given for epsilon sub r = 2.22, 3.0, 3.8 and 9.8. Comparison is shown for the characteristic impedance between the present calculations and those available in the literature for high-epsilon sub r substrates.

Janaswamy, R.↗
NASA NTRS1986

Characteristic impedance of a wide slot line on low permittivity substrates

Computed results on the characteristics impedance of wide slots etched on an electrically thin substrate of low dielectric constant epsilon sub r are presented. These results are used to help provide design data for slotlines. Curves are presented for epsilon sub r = 2.22, 3.0, 3.8, and 9.8. Comparison is shown for the characteristic impedance between the present calculations and those available in the literature for high-epsilon sub r substrates. Empirical formulas, based on least square curve fitting, are presented for the normalized slot wavelength lambda prime/lambda sub 0 and the characteristic impedance Z sub 0 over the range: 0.0015 is equal to or less than W/lambda sub 0 equal to or less than 1.0, 0.006 is equal to or less than d/lambda sub 0 equal to or less than 0.06, 2.22 is equal to or less than epsilon sub 0 equal to or less than 9.8.

Janaswamy, R.↗
NASA NTRS1984

Substrate heating rates for planar and cylindrical-post magnetron sputtering sources

Results are presented for the substrate heating energy/atom required in the planar magnetron sputtering of Al, Cr, Ni, Cu, Mo, In, Ta, W, and Pt in Ar, as well as Al and Cr in O2. Data are also obtained for cylindrical magnetron sputtering of Nb, Ag, Ta, W, and Pb-Sn in Ar, and Mo sputtered in Ne, Ar, Kr, and Xe. Planar and cylindrical magnetron heating rates were comparable. Special experiments were conducted to examine the contributions to substrate heating of plasma species and ion neutralization and reflection at the cathode; the results obtained indicate that charged plasma species do not significantly contribute to the heating, but that neutralized and reflected ions play a significant role in the planar as well as cylindrical cases despite the differences in cathode geometry.

Thornton, J. A.↗