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One Time Programmable Antifuse Memory Based on Bulk Junctionless Transistor

One time programmable (OTP) antifuse base memory is demonstrated based on a bulk junctionless gate-all-around (GAA) nanowire transistor technology. The presented memory consists of a single transistor (1T) footprint without any process modification. The source/drain (S/D) and gate respectively become bit line and word line where the antifuse is formed by oxide breakdown across the gate and the channel. The channel is connected directly to the bit line due to junctionless S/D and inherently isolated from the neighboring cell by the GAA channel. Therefore, an array of 1T antifuse OTP can be a candidate for the sub-5-nanometer technology node.

Antifuse

Antifuse FPGA for Space Applications

This paper presents total dose and SEE testing data of recent antifuse products. It includes ONO-antifuse FPGAS: A1020B, A1020S, RH1020, A1280XL, A1460A, A14100A, A32140DX and A32200DX. Also included are preliminary results of pre-production metal to metal (M/M) antifuse FPGAs, the I100 and the RHI100. Finally, SEU rate calculations of Actel FPGAs are discussed.

Jih-Jong Wang

Antifuse FPGA for Space Applications

This paper presents viewgraphs of Antifuse FPGA (Field Programmable Gate Array) for Space Applications. The topics include: 1) A32140DX TID Test; 2) A1280XL Proton Test; 3) SEU (Single Event Upsets) Rate Calculation; 4) Recent Products Test; 5) A1460A TID (Traveling Ionospheric Disturbances) Test; 6) I100 Proton Test; 7) 100/RHI100 SEU Test; 8) I100/RH100 TID Test; 9) A1020S TID Test; 10) TID Charge Pump Failure; 11) Radiation Testing; and SEE (Single Event Effects) Test Setup.

Wang, Jih-Jong

A SEU-Hard Flip-Flop for Antifuse FPGAs

A single event upset (SEU)-hardened flip-flop has been designed and developed for antifuse Field Programmable Gate Array (FPGA) application. Design and application issues, testability, test methods, simulation, and results are discussed.

Katz, R.

New Instrumentation, Patterns and Their Effects on TID Testing of Antifuse-Based FPGAs

TID-induced leakage currents for some families of antifuse-based Field Programmable Gate Array (FPGA) devices are significantly affected by the state of bias of a device's internal nodes; proper consideration of this effect is essential for proper testing of these devices and interpretation of test results. Variations in TID performance based on utilization of different internal logic modules for implementing identical circuits may be utilized by circuit designers for improvement in TID performance by tailoring the placement algorithm. Propagation delays are significantly affected by TID-induced damage for the devices of 54SX32S family.

Kleyner, Igor

Radiation Tolerant Antifuse FPGA

The total dose performance of the antifuse FPGA for space applications is summarized. Optimization of the radiation tolerance in the fabless model is the main theme. Mechanisms to explain the variation in different products are discussed.

Wang, Jih-Jong

Board Saver for Use with Developmental FPGAs

A device denoted a board saver has been developed as a means of reducing wear and tear of a printed-circuit board onto which an antifuse field programmable gate array (FPGA) is to be eventually soldered permanently after a number of design iterations. The need for the board saver or a similar device arises because (1) antifuse-FPGA design iterations are common and (2) repeated soldering and unsoldering of FPGAs on the printed-circuit board to accommodate design iterations can wear out the printed-circuit board. The board saver is basically a solderable/unsolderable FPGA receptacle that is installed temporarily on the printed-circuit board. The board saver is, more specifically, a smaller, square-ring-shaped, printed-circuit board (see figure) that contains half via holes one for each contact pad along its periphery. As initially fabricated, the board saver is a wider ring containing full via holes, but then it is milled along its outer edges, cutting the via holes in half and laterally exposing their interiors. The board saver is positioned in registration with the designated FPGA footprint and each via hole is soldered to the outer portion of the corresponding FPGA contact pad on the first-mentioned printed-circuit board. The via-hole/contact joints can be inspected visually and can be easily unsoldered later. The square hole in the middle of the board saver is sized to accommodate the FPGA, and the thickness of the board saver is the same as that of the FPGA. Hence, when a non-final FPGA is placed in the square hole, the combination of the non-final FPGA and the board saver occupy no more area and thickness than would a final FPGA soldered directly into its designated position on the first-mentioned circuit board. The contact leads of a non-final FPGA are not bent and are soldered, at the top of the board saver, to the corresponding via holes. A non-final FPGA can readily be unsoldered from the board saver and replaced by another one. Once the final FPGA design has been determined, the board saver can be unsoldered from the contact pads on the first-mentioned printed-circuit board and replaced by the final FPGA.

Berkun, Andrew

Rad-Hard/HI-REL FPGA

The goals for a radiation hardened (RAD-HARD) and high reliability (HI-REL) field programmable gate array (FPGA) are described. The first qualified manufacturer list (QML) radiation hardened RH1280 and RH1020 were developed. The total radiation dose and single event effects observed on the antifuse FPGA RH1280 are reported on. Tradeoffs and the limitations in the single event upset hardening are discussed.

Jih-Jong Wang

Current Radiation Issues for Programmable Elements and Devices

State of the an programmable devices are utilizing advanced processing technologies, non-standard circuit structures, and unique electrical elements in commercial-off-the-shelf (COTS)-based, high-performance devices. This paper will discuss that the above factors, coupled with the systems application environment, have a strong interplay that affect the radiation hardness of programmable devices and have resultant system impacts in (1) reliability of the unprogrammed, biased antifuse for heavy ions (rupture), (2) logic upset manifesting itself as clock upset, and (3) configuration upset. General radiation characteristics of advanced technologies are examined and manufacturers' modifications to their COTS-based and their impact on future programmable devices will be analyzed.

Katz, R.

Summary of Proton Test on the Quick Logic QL3025 at Indiana University

This issue of the Programmable Logic Application Notes is a compilation of topics: (1) Proton irradiation tests were performed on the Quick Logic QL3025 at the Indian University Cyclotron facility. The devices, tests, and results are discussed; (2) The functional failure of EEPROM's in heavy ion environment is presented; (3) the Act 1 architecture is summarized; (4) Antifuse hardness and hardness testing is updated; the single even upset (SEU) response of hardwired flip-flops is also presented; (4) Total dose results of the ACT 2 and ACT 3 circuits is presented in a chart; (5) Recent sub-micron devices testing of total dose is presented in a chart along with brief discussion; and (6) a reference to the WWW site for more articles of interest.

Katz, Richard

Analog Module Architecture for Space-Qualified Field-Programmable Mixed-Signal Arrays

Spacecraft require all manner of both digital and analog circuits. Onboard digital systems are constructed almost exclusively from field-programmable gate array (FPGA) circuits providing numerous advantages over discrete design including high integration density, high reliability, fast turn-around design cycle time, lower mass, volume, and power consumption, and lower parts acquisition and flight qualification costs. Analog and mixed-signal circuits perform tasks ranging from housekeeping to signal conditioning and processing. These circuits are painstakingly designed and built using discrete components due to a lack of options for field-programmability. FPAA (Field-Programmable Analog Array) and FPMA (Field-Programmable Mixed-signal Array) parts exist but not in radiation-tolerant technology and not necessarily in an architecture optimal for the design of analog circuits for spaceflight applications. This paper outlines an architecture proposed for an FPAA fabricated in an existing commercial digital CMOS process used to make radiation-tolerant antifuse-based FPGA devices. The primary concerns are the impact of the technology and the overall array architecture on the flexibility of programming, the bandwidth available for high-speed analog circuits, and the accuracy of the components for high-performance applications.

Edwards, R. Timothy

Current Radiation Issues for Programmable Elements and Devices

The purpose of this presentation is to discuss the COTS performance, clock upset / single event transient, device configuration upset, antifuse hardening, heavy ion SEU, total dose, proton sensitivities, latchup, and additional information and data.

Katz, Richard

FPGAs in Space Environment and Design Techniques

This viewgraph presentation gives an overview of Field Programmable Gate Arrays (FPGA) in the space environment and design techniques. Details are given on the effects of the space radiation environment, total radiation dose, single event upset, single event latchup, single event transient, antifuse technology and gate rupture, proton upsets and sensitivity, and loss of functionality.

Katz, Richard B.

Environmental Effects on Data Retention in Flash Cells

Flash technology is being utilized in fuzed munition applications and, based on the development of digital logic devices in the commercial world, usage of flash technology will increase. Antifuse technology, prevalent in non-volatile field programmable gate arrays (FPGAs), will eventually be phased out as new devices have not been developed for approximately a decade. The reliance on flash technology presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. This paper will present the results of our on-going tests: long-term storage at 150 C for a small population of devices, neutron radiation exposure, electrostatic discharge (ESD) testing, and the trends of large populations (over 300 devices for each condition) exposed to three difference temperatures: 25 C, 125 C, and 150 C.

Flash