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Results for “DIAMOND NUCLEATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).

Ong, T. P.↗
NASA NTRS2013

Diamond Nucleation Using Polyethene

The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

Morell, Gerardo↗
DOE OSTI2020

Measurement of diamond nucleation rates from hydrocarbons at conditions comparable to the interiors of icy giant planets

We present measurements of the nucleation rate into a diamond lattice in dynamically compressed polystyrene obtained in a pump-probe experiment using a high-energy laser system and in situ femtosecond x-ray diffraction. Different temperature-pressure conditions that occur in planetary interiors were probed. For a single shock reaching 70 GPa and 3000 K no diamond formation was observed, while with a double shock driving polystyrene to pressures around 150 GPa and temperatures around 5000 K nucleation rates between 10 29 and 10 34 m –3 s –1 were recorded. These nucleation rates do not agree with predictions of the state-of-the-art theoretical models for carbon-hydrogen mixtures by many orders of magnitude. Our data suggest that there is significant diamond formation to be expected inside icy giant planets like Neptune and Uranus.

43 PARTICLE ACCELERATORS↗
NASA NTRS1991

Diamond film deposition using microwave plasmas under low pressures

Microwave plasma depositions of diamond films have been investigated under low pressures of 10 mTorr to 10 Torr, at low substrate temperatures of 400 to 750 C, using high methane concentrations of 5 to 15 percent and oxygen concentrations of 5 to 10 percent in hydrogen plasmas. The deposition system consists of a microwave plasma chamber, a downstream deposition chamber, and a RF induction-heated sample stage. The deposition system can be operated in either high-pressure microwave or electron cyclotron resonance (ECR) modes by varying the sample stage position. Cathodoluminescence (CL) studies on diamond films deposited at 10 Torr pressure show that CL emissions at 430, 480, 510, 530, 560, 570 and 740 nm can be employed to characterize the quality of diamond films. High-quality, well-faceted diamond films have been deposited at 10 Torr and 600 C using 5 percent CH4 and 5 percent O2 in H2 plasmas; CL measurements on these films show very low N impurities and no detectable Si impurities. Diamond nucleation on SiC has been demonstrated by depositing well-faceted diamond crystallites on SiC-coated Si substrates.

Shing, Y. H.↗
NASA NTRS1995

Diamond thin film temperature and heat-flux sensors

Diamond film temperature and heat-flux sensors are developed using a technology compatible with silicon integrated circuit processing. The technology involves diamond nucleation, patterning, doping, and metallization. Multi-sensor test chips were designed and fabricated to study the thermistor behavior. The minimum feature size (device width) for 1st and 2nd generation chips are 160 and 5 micron, respectively. The p-type diamond thermistors on the 1st generation test chip show temperature and response time ranges of 80-1270 K and 0.29-25 microseconds, respectively. An array of diamond thermistors, acting as heat flux sensors, was successfully fabricated on an oxidized Si rod with a diameter of 1 cm. Some problems were encountered in the patterning of the Pt/Ti ohmic contacts on the rod, due mainly to the surface roughness of the diamond film. The use of thermistors with a minimum width of 5 micron (to improve the spatial resolution of measurement) resulted in lithographic problems related to surface roughness of diamond films. We improved the mean surface roughness from 124 nm to 30 nm by using an ultra high nucleation density of 10(exp 11)/sq cm. To deposit thermistors with such small dimensions on a curved surface, a new 3-D diamond patterning technique is currently under development. This involves writing a diamond seed pattern directly on the curved surface by a computer-controlled nozzle.

Aslam, M.↗
NASA NTRS1993

Carbon and nitrogen in Type 2 supernova diamonds

Abundant diamonds found in meteorites seem either to have condensed within supernova interiors during their expansions and coolings or to have been present around those explosions. Either alternative allows implantation of Xe-HL prior to interstellar mixing. A puzzling feature is the near normalcy of the carbon isotopes, considering that the only C-rich matter, the He-burning shell, is pure C-12 in that region. That last fact has caused many to associate supernova carbon with C-12 carbon, so that its SUNOCONS have been anticipated as very C-12-rich. We show that this expectation is misleading because the C-13-rich regions of Type 2's have been largely overlooked in this thinking. We here follow the idea that the diamonds nucleated in the C-12-rich He shell, the only C-rich site for nucleation, but then attached C-13-rich carbon during turbulent encounters with overlying C-13-rich matter. That is, the initial diamonds continued to grow during the same collisional encounters that cause the Xe-HL implantation. Instead of interacting with the small carbon mass having 13/12 = 0.2 in the upper He zone, however, we have calculated the remnants of the initial H-burning core, which left behind C-13-rich matter as it receded during core hydrogen burning. Howard et al. described why the velocity mixing would be essential to understanding the implantation of both the Xe-H and Xe-L components. Velocity mixing is now known to occur from the X-ray and gamma-ray light curves of supernova 1987A. Using the stellar evolution code developed at Goettingen, we calculated at Clemson the evolution of a grid of massive stars up to the beginning of core He burning. We paid attention to all H-burning reactions throughout the star, to the treatment of both convection and semiconvection, and to the recession of the outer boundary of the convective H-burning core as the star expands toward a larger redder state. This program was to generate a careful map of the CNO isotope distribution as He burning begins. Our result for the 30 solar mass star is shown.

Clayton, Donald D.↗
DOE OSTI2025

Carbon-carbon interactions in warm dense titanium carbide

Encouraged by experimental reports of diamond precipitation in carbon-containing materials under warm dense matter conditions and in shock compression experiments, we examine the behavior of carbon in TiC using density functional theory-molecular dynamics simulations. Two polymorphs of TiC are considered, the ambient-pressure B1 ($Fm$$\overline{3}$$m$) structure in which C-C interactions are prevented by geometric constraints, and a high-pressure Cmcm structure in which C atoms condense into zigzag chains. Chemistry-inspired bonding analyses confirm the covalently bound nature of these chains and further illuminate important interatomic interactions in both structures. Upon melting of B1 TiC, new short-range C-C interactions develop in the liquid, while the pre-existing C-C interactions in Cmcm TiC persist in the liquid. Here, the resulting carbon networks in the melt provide a promising environment for eventual diamond nucleation.

Ab initio molecular dynamics↗
DOE OSTI2025

High Energy Density Physics of Inertial Confinement Fusion Ablator Materials (Final Technical Report)

The goal of this project was to conduct dynamic compression experiments and predictive simulations to reveal the fundamental high-energy-density (HED) physics of amorphous carbon. These results are essential for assessing amorphous carbon as a potential ablator material for next generation of inertial confinement fusion (ICF) capsules. We made significant progress in exploring the HED properties of amorphous carbon through experiments at Omega EP Laser and the European XFEL, in addition to billion-atom, quantum-accurate molecular dynamics (MD) simulations. Through our joint experimental and simulation program, we mapped the phase diagram of amorphous carbon, uncovering its range of metastability and identifying phase transitions to diamond and liquid carbon along the Hugoniot and at higher pressures using double shock compression pathways. Our findings indicate that amorphous carbon melts at significantly lower shock pressures than high-density carbon (diamond). However, nanocrystalline diamond nucleates across a broad range of pressures and temperatures. This emergence of the nanocrystalline microstructure during compression can negatively impact the planarity of the shock front and potentially trigger ablator/fuel mixing during Inertial Fusion Energy (IFE) applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1995

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma enhanced chemical vapor deposited (PECVD) polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for: (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the films cross-section and interface however were not affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscoy (XPS) spectra indicates that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1994

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1993

Nucleation of the diamond phase in aluminium-solid solutions

Precipitation was studied from fcc solid solutions with silicon, germanium, copper and magnesium. Of all these elements only silicon and germanium form diamond cubic (DC) precipitates in fcc Al. Nucleation of the DC structure is enhanced if both types of atom are dissolved in the fcc lattice. This is interpreted as due to atomic size effects in the prenucleation stage. There are two modes of interference of fourth elements with nucleation of the DC phase in Al + Si, Ge. The formation of the DC phase is hardly affected if the atoms (for example, copper) are rejected from the (Si, Ge)-rich clusters. If additional types of atom are attracted by silicon and/or germanium, DC nuclei are replaced by intermetallic compounds (for example Mg2Si).

Hornbogen, E.↗
NASA NTRS1992

Low-pressure microwave plasma nucleation and deposition of diamond films

Low-pressure microwave plasma nucleation and deposition of diamond films were investigated in the pressure range 10-mtorr to 10 torr, at substrate temperatures 400-750 C and with CH4 and O2 concentrations in H2 plasma of 2-15 percent and 2-10 percent, respectively. The experiments were performed in a microwave plasma system consisting of a microwave plasma chamber, a downstream deposition chamber, and an RF induction heated sample stage. Scanning electron microscopy of diamond films deposited at 600 C with 5 percent CH4 and 5 percent O2 in H2 plasmas showed high-quality well faceted crystallites of 1/2 micron size. Cathodoluminescence measurements of these films showed very few nitrogen impurities and no detectable silicon impurities.

Shing, Y. H.↗
NASA NTRS2003

Nucleation Behavior of Oxygen-Acetylene Torch-Produced Diamond Films

A mechanism is presented for the nucleation of diamond in the combustion flame environment. A series of six experiments and two associated simulations provide results from which the mechanism was derived. A substantial portion of the prior literature was reviewed and the data and conclusions from the previous experimenters were found to support the proposed mechanism. The nucleation mechanism builds on the work of previous researchers but presents an approach to nucleation in a detail and direction not fully presented heretofore. This work identifies the gas phase as the controlling environment for the initial formation steps leading to nucleation. The developed mechanism explains some of the difficulty which has been found in producing single crystal epitaxial films. An experiment which modified the initial gas phase precursor using methane and carbon monoxide is presented. Addition of methane into the precursor gases was found to be responsible for pillaring of the films. Atomic force microscopy surface roughness data provides a reasonable look at suppression of nucleation by carbon monoxide. Surface finish data was taken on crystals which were open to the nucleation environment and generally parallel to the substrate surface. The test surfaces were measured as an independent measure of the instantaneous nucleation environent. A gas flow and substrate experiment changed the conditions on the surface of the sample by increasing the gas flow rate while remaining on a consistent point of the atomic constituent diagram, and by changing the carbide potential of the substrate. Two tip modification experiments looked at the behavior of gas phase nucleation by modifying the shape and behavior of the flame plasma in which the diamond nucleation is suspected to occur. Diamond nucleation and growth was additionally examined using a high-velocity oxygen fuel gun and C3H6 as the fuel gas phase precursor with addition of carbon monoxide gas 01 addition of liquid toluene.

Roberts, F. E.↗
NASA NTRS1991

Applications of diamond films and related materials; Proceedings of the 1st International Conference, Auburn, AL, Aug. 17-22, 1991

The present conference discusses the nucleation and growth of diamond from hydrocarbons, the cutting tool performance of CVD thick-film diamond, the characterization of CVD diamond grinding powder, industrial applications of crystalline diamond-coated tools, standardized SEM tribometry of diamond-coated substrates, residual stress in CVD diamond films, the optical properties of CVD diamond films, polycrystalline diamond films for optical applications, and diamond growth on ferrous metals. Also discussed are ion beam-irradiation smoothing of diamond films, electronic circuits on diamond substrates, diamond-laminated surfaces for evaporative spray cooling, electron devices based on the unique properties of diamond, diamond cold cathodes, thin-film diamond microstructure applications, Schottky diodes from flame-grown diamond, diamond films for thermionic applications, methods of diamond nucleation and selective deposition, high-rate/large-area diamond film production, halogen-assisted diamond growth, the economics of diamond technology, and the optical and mechanical properties of diamondlike films.

Tzeng, Yonhua↗
NASA NTRS1991

Selective and low temperature synthesis of polycrystalline diamond

Polycrystalline diamond thin films have been deposited on single-crystal silicon substrates at low temperatures (not above 600 C) using a mixture of hydrogen and methane gases by high-pressure microwave plasma-assisted chemical vapor deposition. Low-temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

Ramesham, R.↗
NASA NTRS1994

Microstructural evolution of diamond growth during HFCVD

High resolution transmission electron microscopy (HRTEM) was used to study the nucleation and growth mechanism of diamond by hot filament chemical vapor deposition (HFCVD) process. A novel technique has shown a direct evidence for the formation of the diamond-like carbon layer 8-14 nm thick in which small diamond micro-crystallites were embedded. These diamond micro-crystallites were formed as a result of transformation of diamond-like carbon into diamond. The diamond micro-crystallites present in the amorphous diamond-like carbon layer provided nucleation sites for diamond growth. Large diamond crystallites were observed to grow from these micro-crystallites. The mechanism of diamond growth will be presented based on experimental findings.

TRT-EXPERIMENTAL↗
DOE OSTI2023

Nucleation dependence of atomic layer deposition on diamond surface termination

Surface termination and interfacial interactions are critical for advanced solid-state quantum applications. Here, in this paper, we demonstrate that atomic layer deposition (ALD) can both provide valuable insight on the chemical environment of the surface, having sufficient sensitivity to distinguish between the common diamond (001) surface termination types and passivate these interfaces as desired. We selected diamond substrates exhibiting both smooth and anomalously rough surfaces to probe the effect of morphology on ALD nucleation. We use high resolution in situ spectroscopic ellipsometry to monitor the surface reaction with sub-angstrom resolution, to evaluate the nucleation of an ALD Al 2 O 3 process as a function of different ex and in situ treatments to the diamond surface. In situ water dosing and high vacuum annealing provided the most favorable environment for nucleation of dimethylaluminum isopropoxide and water ALD. Hydrogen termination passivated both smooth and rough surfaces while triacid cleaning passivated the smooth surface only, with striking effectiveness.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1995

Improved Growth Of Diamond Films From Oxyacetylene Torch

Two modifications proposed to improve nucleation and growth of diamond films on surfaces by use of oxyacetylene torch. In one modification, carbon monoxide added to fuel gas; in other, carbon monoxide, methane, and oxygen added in synchronized pulses. Second modification intended not only to improve nucleation and growth of diamond films but also makes films more nearly homogeneous over areas larger than spots of such film grown by oxygen/acetylene-growth technique. Modified technique enables deposition of diamond films on alternative materials-in particular, copper.

Roberts, Floyd E., III↗