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Total-dose radiation effects data for semiconductor devices, volume 2
Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.
Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A
Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.
In Situ Testing Methods for Mixed-Mode Harsh Environments
A review of the radiation effects investigation capabilities of the JPL Dynamitron Accelerator Facility are discussed. A process for its use in performing total ionizing dose (TID) studies are outlined. The results of radiation effects in complicated test systems where device effects may occur due to local system irradiation are also presented.
Characteristics of composite carbon resistors used for measuring accelerator terminal voltages.
Voltage divider network board composed of composite carbon resistors for measurement of terminal voltage of 3 Mev Dynamitron electron accelerator recalibration
Measurements of the UV and VUV transmission of optical materials during high energy electron irradiation
An experimental program was conducted in which the optical transmission of several transparent materials was measured during high energy electron irradiation. These experiments were conducted using the Dynamitron electron accelerator as a continuous source of 1.5 MeV electrons and the LINAC electron accelerator as a pulsed source of 5-7 MeV electrons. The experimental program consisted of three major portions. The first portion, the optical transmission of fused silica, BeO, MgF2, and LiF was measured at vacuum ultraviolet wavelengths in the range 1550-2000 A during ambient temperature, 1.5 MeV electron irradiation at ionizing dose rates to 0.5 Mrad/sec. In the second portion of the program, the optical transmission of fused silica and BeO was measured in the range 2000-3000 A during high dose rate, elevated temperature 1.5 MeV electron irradiation. In particular, accurate measurements of the optical transmission were made at ionizing dose rates as high as 10 Mrad/sec. In the final portion of the program, the optical transmission of fused silica and BeO was measured in the wavelength range 2000-3000 A during pulsed 5 and 7 MeV electron irradiation from the LINAC accelerator. The maximum time averaged ionizing dose rate was limited to 0.75 Mrad/sec due to accelerator limitations.
Hardening of MJS77 spacecraft against the Jupiter radiation belts
Results of the device characterization program to identify components of the Mariner Jupiter/Saturn spacecraft in need of radiation hardening to meet a total dose requirement of 5 trillion e/sq cm are presented. The parts to be tested, including bipolar transistors, JFETs, SCRs, CMOS devices, linear integrated circuits, Zener diodes and other radiation-sensitive parts, were identified by a worst case circuit analysis of the 20 major subsystems. The test samples were exposed to several levels of irradiation from a Dynamitron electron accelerator capable of producing a steady stream of electrons at energies up to 2.5 eV. The electrical parameters of the devices were measured immediately following irradiation to prevent annealing. CMOS devices and linear devices showed the most severe degradation in a moderate radiation environment, and significant degradation was produced at low current in bipolar transistors. Three methods used for screening a number of devices determined by circuit and shielding analyses to be unacceptable radiation-sensitive are described: diffusion and metallization lot screening; wafer lot screening; and irradiation-anneal screening.
Total-dose radiation effects data for semiconductor devices (1989 supplement)
Steady state, total dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. Two primary radiation source types were used: Cobalt-60 gamma rays and a Dynamitron electron accelerator capable of delivering 2.5 MeV electrons at a steady rate.
Gamma Energy Evaluation for Creation of Cd-111(sub m), In-113(sub m), and In-115(sub m) Isotopes
NASA Glenn Research Center is investigating nuclear reactions in deuterated materials exposed to bremsstrahlung photons with kinetic energies from 1-3MeV. Recent experiments used a continuous beam Dynamitron electron accelerator with a braking target. Electron beam energy loss verication was desired and experiments using cadmium and indium were completed which are known to transition to excited metastable states after exposure to bremsstrahlung photons. The gamma spin-up of Cd-111, In-113, and In-115 are with photon beam energies of 1017keV, 1024keV, and 941keV respectively. Recent tests corroborated published gamma energies using a beam energy loss of 62 to 74keV.
In-Situ Testing Methods for Mixed-Mode Harsh Environments
Future NASA missions are driving a need for instrumentation and space electronics that will operate at extreme temperatures, with low mass and extended deployments. This need results in devices that will experience dose damage at both low and high temperatures that will suppress annealing and induce accelerated wear out issues. Therefore, the ability to perform radiation tests on devices at temperature is critical. This paper analyses the methods and process to enable these test as developed at the JPL Dynamitron Facility. Since electronics are the radiation source for this facility, the steps to ensure parity with cobalt-60 testing are discussed. Also discussed are the implications for system level testing and mixed radiation mode testing for highly integrated and scaled devices.