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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Fiber optic gas sensor

A gas sensor includes an in-fiber resonant wavelength device provided in a fiber core at a first location. The fiber propagates a sensing light and a power light. A layer of a material is attached to the fiber at the first location. The material is able to absorb the gas at a temperature dependent gas absorption rate. The power light is used to heat the material and increases the gas absorption rate, thereby increasing sensor performance, especially at low temperatures. Further, a method is described of flash heating the gas sensor to absorb more of the gas, allowing the sensor to cool, thereby locking in the gas content of the sensor material, and taking the difference between the starting and ending resonant wavelengths as an indication of the concentration of the gas in the ambient atmosphere.

Chen, Peng↗
NASA NTRS2006

Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.

Hunter, Gary W.↗
NASA NTRS2002

Development of Sic Gas Sensor Systems

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

Hunter, G. W.↗
NASA NTRS2007

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Hunter, G. W.↗
NASA NTRS1997

SiC-Based Schottky Diode Gas Sensors

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Hunter, Gary W.↗
NASA NTRS2012

Ultra-Low-Power MEMS Selective Gas Sensors

This innovation is a system for gas sensing that includes an ultra-low-power MEMS (microelectromechanical system) gas sensor, combined with unique electronic circuitry and a proprietary algorithm for operating the sensor. The electronics were created from scratch, and represent a novel design capable of low-power operation of the proprietary MEMS gas sensor platform. The algorithm is used to identify a specific target gas in a gas mixture, making the sensor selective to that target gas.

Stetter, Joseph↗
NASA NTRS1999

Multi-Gas Sensor

A multi-gas sensor is provided which modulates a polarized light beam over a broadband of wavelengths between two alternating orthogonal polarization components. The two orthogonal polarization components of the polarization modulated beam are directed along two distinct optical paths. At least one optical path contains one or more spectral discrimination element, with each spectral discrimination element having spectral absorption features of one or more gases of interest being measured. The two optical paths then intersect, and one orthogonal component of the intersected components is transmitted and the other orthogonal component is reflected. The combined polarization modulated beam is partitioned into one or more smaller spectral regions of interest where one or more gases of interest has an absorption band. The difference in intensity between the two orthogonal polarization components is then determined in each partitioned spectral region of interest as an indication of the spectral emission/absorption of the light beam by the gases of interest in the measurement path. The spectral emission/absorption is indicative of the concentration of the one or more gases of interest in the measurement path. More specifically, one embodiment of the present invention is a gas filter correlation radiometer which comprises a polarizer, a polarization modulator, a polarization beam splitter, a beam combiner, wavelength partitioning element, and detection element. The gases of interest are measured simultaneously and, further, can be measured independently or non-independently. Furthermore, optical or electronic element are provided to balance optical intensities between the two optical paths.

Sachse, Glenn W.↗
NASA NTRS2000

SiC-Based Gas Sensor Development

Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

Hunter, G. W.↗
NASA NTRS2015

Advancement of Miniature Optic Gas Sensor (MOGS) Probe Technology

Advancement of Miniature Optic Gas Sensor (MOGS) Probe Technology" project will investigate newly developed optic gas sensors delivered from a Small Business Innovative Research (SBIR) Phase II effort. A ventilation test rig will be designed and fabricated to test the sensors while integrated with a Suited Manikin Test Apparatus (SMTA). Once the sensors are integrated, a series of test points will be completed to verify that the sensors can withstand Advanced Suit Portable Life Support System (PLSS) environments and associated human metabolic profiles for changes in pressure and levels of Oxygen (ppO2), carbon dioxide (ppCO2), and humidity (ppH2O).

Chullen, Cinda↗
NASA NTRS1997

SiC-Based Gas Sensors

Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at temperatures above 600 C. Recently, SiC semiconductors have been used in Schottky diode gas sensor structures. These sensors have been shown to be functional at temperatures significantly above the normal operating range of Si-based devices. SiC sensor operation at these higher temperatures allows detection of gases such as hydrocarbons which are not detectable at lower temperatures. This paper discusses the development of SiC-based Schottky diode gas sensors for the detection of hydrogen, hydrocarbons, and nitrogen oxides (NO(x)). Sensor designs for these applications are discussed. High sensitivity is observed for the hydrogen and hydrocarbon sensors using Pd on SiC Schottky diodes while the NO(x) sensors are still under development. A prototype sensor package has been fabricated which allows high temperature operation in a room temperature ambient by minimizing heat loss to that ambient. It is concluded that SiC-based gas sensors have considerable potential in a variety of gas sensing applications.

Chen, Liang-Yu↗
NASA NTRS2003

Integrated Microfluidic Gas Sensors for Water Monitoring

A silicon-based microhotplate tin oxide (SnO2) gas sensor integrated into a polymer-based microfluidic system for monitoring of contaminants in water systems is presented. This device is designed to sample a water source, control the sample vapor pressure within a microchannel using integrated resistive heaters, and direct the vapor past the integrated gas sensor for analysis. The sensor platform takes advantage of novel technology allowing direct integration of discrete silicon chips into a larger polymer microfluidic substrate, including seamless fluidic and electrical interconnects between the substrate and silicon chip.

Zhu, L.↗
NASA NTRS1997

Varying potential silicon carbide gas sensor

A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

Shields, Virgil B.↗
NASA NTRS1992

Development of a hydrogen gas sensor using microfabrication technology

Microfabrication and micromachining technologies are used to produce a hydrogen gas sensor based on a palladium-silver film. The sensor uses a heater that is fabricated by diffusing p-type borones into the substrate, forming a resistance heater. A diode for temperature measurement is produced using p-type boron and n-type phosphor diffused into the substrate. A thickness of the palladium-silver film is approximately 300 arcsec. The hydrogen gas sensor employs the proven palladium-silver diode structure and is surrounded by a phosphor doped resistance heater which can be heated up to a temperature of 250 C. Experimental results show that the sensor is capable of operating over a wide range of hydrogen concentration levels between 0-95 percent without any hysteresis effects.

Liu, Chung-Chiun↗
NASA NTRS2011

Carbon Dioxide Gas Sensors and Method of Manufacturing and Using Same

A gas sensor includes a substrate and a pair of interdigitated metal electrodes selected from the group consisting of Pt, Pd, Au, Ir, Ag, Ru, Rh, In, and Os. The electrodes each include an upper surface. A first solid electrolyte resides between the interdigitated electrodes and partially engages the upper surfaces of the electrodes. The first solid electrolyte is selected from the group consisting of NASICON, LISICON, KSICON, and .beta.''-Alumina (beta prime-prime alumina in which when prepared as an electrolyte is complexed with a mobile ion selected from the group consisting of Na.sup.+, K.sup.+, Li.sup.+, Ag.sup.+, H.sup.+, Pb.sup.2+, Sr.sup.2+ or Ba.sup.2+). A second electrolyte partially engages the upper surfaces of the electrodes and engages the first solid electrolyte in at least one point. The second electrolyte is selected from the group of compounds consisting of Na.sup.+, K.sup.+, Li.sup.+, Ag.sup.+, H.sup.+, Pb.sup.2+, Sr.sup.2+ or Ba.sup.2+ ions or combinations thereof.

Hunter, Gary W.↗
NASA NTRS2014

Carbon Dioxide Gas Sensors and Method of Manufacturing and Using Same

A gas sensor comprises a substrate layer; a pair of interdigitated metal electrodes, said electrodes include upper surfaces, the electrodes selected from the group consisting of Pt, Pd, Au, Ir, Ag, Ru, Rh, In, Os, and their alloys. A first layer of solid electrolyte staying in between electrode fingers and partially on said upper surfaces of said electrodes, said first layer selected from NASICON, LISICON, KSICON and.beta.''-Alumina. A second layer of metal carbonate(s) as an auxiliary electrolyte engaging said upper surfaces of the electrodes and the first solid electrolyte. The metal carbonates selected from the group consisting of the following ions Na.sup.+, K.sup.+, Li.sup.+, Ag.sup.+, H.sup.+, Pb.sup.2+, Sr.sup.2+, Ba.sup.2+, and any combination thereof. An extra layer of metal oxide selected from the group consisting of SnO.sub.2, In.sub.2O.sub.3, TiO.sub.2, WO.sub.3, ZnO, Fe.sub.2O.sub.3, ITO, CdO, U.sub.3O.sub.8, Ta.sub.2O.sub.5, BaO, MoO.sub.2, MoO.sub.3, V.sub.2O.sub.5, Nb.sub.2O.sub.5, CuO, Cr.sub.2O.sub.3, La.sub.2O.sub.3, RuO.sub.3, RuO.sub.2, ReO.sub.2, ReO.sub.3, Ag.sub.2O, CoO, Cu.sub.2O, SnO, NiO, Pr.sub.2O.sub.3, BaO, PdO.sub.2, HfO.sub.3, HfO.sub.3 or other metal oxide and their mixtures residing above and in engagement with the second electrolyte to improve sensor performance and/or to reduce sensor heating power consumption.

Hunter, Gary W.↗
NASA NTRS1997

Temperature and Humidity Dependence of a Polymer-Based Gas Sensor

This paper quantifies the temperature and humidity dependence of a polymer-based gas sensor. The measurement and analysis of three polymers indicates that resistance changes in the polymer films, due to temperature and humidity, can be positive or negative. The temperature sensitivity ranged from +1600 to -320 ppm/nd the relative sensitivity ranged from +1100 to -260 ppm/%.

temperature humidity gas sensor polymers↗
NASA NTRS2018

Gas Sensors with Contact Pads

Systems, methods, and other embodiments associated with gas detecting sensors. According to one embodiment, a gas sensor includes a metal layer, a barrier interlayer, a substrate layer, a first insulating layer, a conduction path, a contact pad, and a second insulating layer. The conduction path connects the metal layer to the contact pad. The second insulating layer prevents diffusion through the contact pad, the conduction path, or the metal layer. The sensor includes a wire bonded electrical connection to the contact pad such that voltage can be determined and/or applied.

Xu, Jennifer↗