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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Controlled, Site-Specific Functionalization of Carbon Nanotubes with Diazonium Salts

This work uses existing technologies to prepare a crossbar architecture of nano tubes, wherein one nanotube is fixed to a substrate, and a second nanotube is suspended a finite distance above. Both nano tubes can be individually addressed electrically. Application of opposite potentials to the two tubes causes the top tube to deform and to essentially come into contact with the lower tube. Contact here refers not to actual, physical contact, but rather within an infinitesimally small distance referred to as van der Walls contact, in which the entities may influence each other on a molecular and electronic scale. First, the top tube is physically deformed, leading to a potentially higher chemical reactivity at the point of deformation, based on current understanding of the effects of curvature strain on reactivity. This feature would allow selective functionalization at the junction via reaction with diazonium salts. Secondly, higher potential is achieved at the point of "cross" between the tubes. In a pending patent application, a method is claimed for directed self-assembly of molecular components onto the surface of metal or conductive materials by application of potential to the metal or conductive surface. In another pending patent application, a method is claimed for attaching molecules to the surface of nanotubes via the use of reactive diazonium salts. In the present invention, the directed functionalization of the crossed-nanotube junctions by applying a potential to the ends of the nanotubes in the presence of reactive diazonium slats, or other reactive molecular species is claimed. The diazonium salts are directed by the potential existing at the junction to react with the surface of the nanotube, thus placing functional molecular components at the junctions. The crossed nano tubes therefore provide a method of directly addressing the functionalized molecules, which have been shown to function as molecular switches, molecular wires, and in other capacities and uses. Site-specific functionalization may enable the use of nanotubes in molecular electronic applications because device functionality is critical at the cross points.

Tour, James M.↗

Silicon carbide semiconductor technology for high temperature and radiation environments

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Matus, Lawrence G.↗

Formation of oligonucleotide-PNA-chimeras by template-directed ligation

DNA sequences have previously been reported to act as templates for the synthesis of PNA, and vice versa. A continuous evolutionary transition from an informational replicating system based on one polymer to a system based on the other would be facilitated if it were possible to form chimeras, that is molecules that contain monomers of both types. Here we show that ligation to form chimeras proceeds efficiently both on PNA and on DNA templates. The efficiency of ligation is primarily determined by the number of backbone bonds at the ligation site and the relative orientation of template and substrate strands. The most efficient reactions result in the formation of chimeras with ligation junctions resembling the structures of the backbones of PNA and DNA and with antiparallel alignment of both components of the chimera with the template, that is, ligations involving formation of 3'-phosphoramidate and 5'-ester bonds. However, double helices involving PNA are stable both with antiparallel and parallel orientation of the two strands. Ligation on PNA but not on DNA templates is, therefore, sometimes possible on templates with reversed orientation. The relevance of these findings to discussions of possible transitions between genetic systems is discussed.

NASA Discipline Exobiology↗

Advanced X-Ray Timing Array (AXTAR) Animation

The animation depicts NASA's concept for a next-generation Advanced X-ray Timing Mission. The models and their textures doe not necessarily represent the final iteration. Delivery specifications include launch with Taurus II or Falcon 9, mass of 2650 kg, with a circular low earth orbit at approximately 600 km. The inclination depends on the launch vehicle and spacecraft mass. AXTAR's prime instrument will probe the physics of neutron stars and black holes through X-ray timing and spectral measurements. The primary instrument will be the Large Area Timing Array (LATA). The Sky Monitor Clusters configuration consists of 27 Sky Monitor cameras th at are grouped in five clusters. This configuration will achieve approximately 85 percent all sky coverage. Spacecraft components include a science bus to house the LATA of supermodules; a spacecraft bus to house components such as propulsion tanks, avionics, and reaction wheels; solar arrays configured from space-qualified GaAs 3-junction cells; star trackers for attitude knowledge; a propulsion system of four pods, each containing one 100 lbf and two 5 lbf engines; a launch vehicle adaptor; and a radiation shield.

Hopkins, Randall C.↗

Voltage stress effects on microcircuit accelerated life test failure rates

The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

Johnson, G. M.↗

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the "flat-spot" (FS) power loss phenomenon observed in silicon solar cells operating deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallurization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the 'flat-spot' power-loss phenomenon observed in silicon solar cells operating under deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam

The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.

Daud, T.↗

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model that explains the flat-spot power loss phenomenon is presented. Evidence suggests that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the P-N junction is destroyed and replaced with a metal semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are shown along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

P-n junctions formed in gallium antimonide

Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.

Clough, R.↗

Nonenzymatic, template-directed ligation of oligoribonucleotides is highly regioselective for the formation of 3'-5' phosphodiester bonds

We have found that nonenzymatic, template-directed ligation reactions of oligoribonucleotides display high selectivity for the formation of 3'-5' rather than 2'-5' phosphodiester bonds. Formation of the 3'-5'-linked product is favored regardless of the metal ion catalyst or the leaving group, and for several different ligation junction sequences. The degree of selectivity depends on the leaving group: the ratio of 3'-5'- to 2'-5'-linked products was 10-15:1 when the 5'-phosphate was activated as the imidazolide, and 60-80:1 when the 5'-phosphate was activated by the formation of a 5'-triphosphate. Comparison of oligonucleotide ligation reactions with previously characterized single nucleotide primer extension reactions suggests that the strong preference for 3'-5'-linkages in oligonucleotide ligation is primarily due to occurence of ligation within the context of an extended Watston-Crick duplex. The ability of RNA to correctly self-assemble by template-directed ligation is an intrinsic consequence of its chemical structure and need not be imposed by an external catalyst (i.e., an enzyme polymerase); RNA therefore provides a reasonable structural basis for a self-replicating system in a prebiological world.

Non-NASA Center↗

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

Kaul, Anupama↗

Effects of Spaceflight on the Attachment of Muscle to the Tibia, Fibula and Calcaneus

Microgravity significantly reduces transmission of ground-reaction forces to bones, promoting atrophy. There is little information available concerning the effects of microgravity on bones at sites where anti-gravity muscles are attached (tendon-bone junctions). This study evaluates the effects of microgravity on the origin and insertion sites of anti-gravity muscles on the rat tibia, fibula and calcaneus. Changes in the strength of those tendon-bone junctions could predispose the animal to injury following spaceflight.

Johnson, R. B.↗

Impedance properties of circular microstrip antenna

A moment method solution to the input impedance of a circular microstrip antenna excited by either a microstrip feed or a coaxial probe is presented. Using the exact dyadic Green's function and the Fourier transform the problem is formulated in terms of Richmond's reaction integral equation from which the unknown patch current can be solved for. The patch current is expanded in terms of regular surface patch modes and an attachment mode (for probe excited case) which insures continuity of the current at probe/patch junction, proper polarization and p-dependance of patch current in the vicinity of the probe. The input impedance of a circular microstrip antenna is computed and compared with earlier results. Effect of attachment mode on the input impedance is also discussed.

Deshpande, M. D.↗

Prediction of pressure and flow transients in a gaseous bipropellant reaction control rocket engine

An analytic model is developed to predict pressure and flow transients in a gaseous hydrogen-oxygen reaction control rocket engine feed system. The one-dimensional equations of momentum and continuity are reduced by the method of characteristics from partial derivatives to a set of total derivatives which describe the state properties along the feedline. System components, e.g., valves, manifolds, and injectors are represented by pseudo steady-state relations at discrete junctions in the system. Solutions were effected by a FORTRAN IV program on an IBM 360/65. The results indicate the relative effect of manifold volume, combustion lag time, feedline pressure fluctuations, propellant temperature, and feedline length on the chamber pressure transient. The analytical combustion model is verified by good correlation between predicted and observed chamber pressure transients. The developed model enables a rocket designer to vary the design parameters analytically to obtain stable combustion for a particular mode of operation which is prescribed by mission objectives.

Markowsky, J. J.↗

Kinetic and mechanistic analysis of nonenzymatic, template-directed oligoribonucleotide ligation

The role of divalent cations in the mechanism of pyrophosphate-activated, template-directed oligoribonucleotide ligation has been investigated. The dependence of the reaction rate on Mg2+ concentration suggests a kinetic scheme in which a Mg2+ ion must bind before ligation can proceed. Mn2+, Ca2+, Sr2+, and Ba2+ can also catalyze the reaction. Although Pb2+ and Zn2+ do not catalyze the reaction in the absence of other divalent ions, they significantly modulate the reaction rate when added in the presence of Mg2+, with Pb2+ stimulating the reaction (up to 65-fold) and Zn2+ inhibiting the reaction. The logarithm of the ligation rate increases linearly, with slope of 0.95, as a function of pH, indicating that the reaction involves a single critical deprotonation step. The ligation rates observed with the different divalent metal ion catalysts (Mn2+ > Mg2+ > Ca2+ > Sr2+ = Ba2+) vary inversely with the pKa values of their bound water molecules. The pH profile and these relative ligation rates suggest a mechanism in which a metal-bound hydroxide ion located near the ligation junction promotes catalysis, most likely by deprotonation of the hydroxl nucleophile. The effects of changing either the leaving group or the attacking hydroxyl, together with the large delta S(++) value for oligonucleotide ligation (about -20 eu), are consistent with an associative transition state.

Non-NASA Center↗