Thin-film thickness from theoretical expressions for conductivity and isothermal Hall effect.
Thin film thickness from theoretical expressions for conductivity and isothermal Hall effect
THIN FILMS↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Improved Hall-Effect Sensors For Magnetic Memories
High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.
Wu, Jiin-Chuan↗
Multilayer thin film Hall effect device
A Hall effect device and a method of obtaining a magnetic field map of a magnetic body with the Hall effect device are presented. The device comprises: (1) a substrate, (2) a first layer having a first Hall coefficient deposited over the substrate, and (3) a second layer having a second Hall coefficient deposited over the first layer, the first and second layers cooperating to create, in the Hall effect device, a third Hall coefficient different from the first and second Hall coefficients. Creation of the third Hall coefficient by cooperation of the first and second layers allows use of materials for the first and second layers that were previously unavailable for Hall effect devices due to their relatively weak Hall coefficient.
Peters, Palmer N.↗
Vertical bloch line memory
A new read gate design for the vertical Bloch line (VBL) memory is disclosed which offers larger operating margin than the existing read gate designs. In the existing read gate designs, a current is applied to all the stripes. The stripes that contain a VBL pair are chopped, while the stripes that do not contain a VBL pair are not chopped. The information is then detected by inspecting the presence or absence of the bubble. The margin of the chopping current amplitude is very small, and sometimes non-existent. A new method of reading Vertical Bloch Line memory is also disclosed. Instead of using the wall chirality to separate the two binary states, the spatial deflection of the stripe head is used. Also disclosed herein is a compact memory which uses vertical Bloch line (VBL) memory technology for providing data storage. A three-dimensional arrangement in the form of stacks of VBL memory layers is used to achieve high volumetric storage density. High data transfer rate is achieved by operating all the layers in parallel. Using Hall effect sensing, and optical sensing via the Faraday effect to access the data from within the three-dimensional packages, an even higher data transfer rate can be achieved due to parallel operation within each layer.
Katti, Romney R.↗
Over Powering Solar System Exploration
This paper describes the new mission possibilities and technology requirements for a high power solar Electric Propulsion (SEP) system using a Taurus-class launch vehicle. A 10-kW Hall effect Thruster with Anode Layer (TAL) running direct-drive off a high voltage solar array could produce enough thrust to enable very rapid missions with a small sciencecraft to various destinations throughout the solar system.
Solar↗
Integrated, nonvolatile, high-speed analog random access memory
This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.
Katti, Romney R.↗
Ionized dopant concentrations at the heavily doped surface of a silicon solar cell
Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.
Weinberg, I.↗
(abstract) An Assessment of Electric Propulsion Research, Development, and Application in the United States
This paper will discuss the development of Electric Propulsion technology in the U.S. from the 1960's to the present. It will summarize the various activities related to arcjets, resistojets, pulsed plasma thrustors, magneto-plasma-dynamic thrustors, ion engines, and more recently the evaluation of Hall effect thrustors of the SPT or Anode Layer type developed in Russia. Also, demonstration test flight and actual mission applications will be summarized. Finally, the future application of electric propulsion to near-term commercial communications satellites and planetary missions will be projected. This history is rich in diversity, and has involved a succession of types of thrustors, propellants, and electric power sources. With the recent use of arcjets on commercial communication satellites and the flight tests of ion engines for this application, it appears that electric propulsion is finally on the verge of wide spread application.
ion engines electric propulsion arcjets resistojet↗
The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide
The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.
Littlejohn, M. A.↗
Exploratory study on microanalysis of thin films by backscattering techniques
Solid phase epitaxial growth of Si layers was studied by backscattering spectrometry for controllable electrical characteristics. Samples were fabricated by vacuum deposition on a thin layer of Sb before deposition of the amorphous Si layer. Analysis of the resulting SPEG layer showed that Sb was present in the SPEG layer of Si. The characteristic of the SPEG layer against the Si substrate was rectifying. A scanning microprobe picture of a cleaved sample established the presence of a depletion region more than 1 micron below the surface. Hall effect data indicated that the SPEG layer was n-type, with average free carrier concentration of about 10 to the 19th power cm/3 and average electron mobility of about 40 sq cm/Vs. SPEG with Pd silicide or Ni silicide transport layers showed fast initial transient growth regimes with slower growth in the steady state regimes.
Mayer, J. W.↗
Magnetic Analog Random-Access Memory
Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.
Katti, Romney R.↗
Hall current effect on tearing mode instability
From a linear 2-D eigenmode analysis, it is found that the Hall current effect on collisional tearing mode instability becomes important for the thin magnetic reversal layer whose width is comparable to the ion inertia length; Hall currents produce a three-dimensional field structure and increase the reconnection (growth) rate. Since the magnetaic reversal layer widths both in the magnetopause and in the magnetotail are reported to become as thin as the ion inertial length (several hundred km) when the reconnection process is supposed to occur, the Hall current effect may explain the appearance of the dawn-dusk component of the magnetic field in the magnetotail reconnection region.
Terasawa, T.↗
The Role of the Hall Effect in Global Structure and Dynamics of Planetary Magnetospheres: Ganymede as a Case Study
We present high-resolution Hall MHD simulations of Ganymede's magnetosphere demonstrating that Hall electric fields in ion-scale magnetic reconnection layers have significant global effects not captured in resistive MHD simulations. Consistent with local kinetic simulations of magnetic reconnection, our global simulations show the development of intense field-aligned currents along the magnetic separatrices. These currents extend all the way down to the moon's surface, where they may contribute to Ganymede's aurora. Within the magnetopause and magnetotail current sheets, Hall J x B forces accelerate ions to the local Alfven speed in the out-of-plane direction, producing a global system of ion drift belts that circulates Jovian magnetospheric plasma throughout Ganymede's magnetosphere. We discuss some observable consequences of these Hall-induced currents and ion drifts: the appearance of a sub-Jovian 'double magnetopause' structure, an Alfvenic ion jet extending across the upstream magnetopause, and an asymmetric pattern of magnetopause Kelvin-Helmholtz waves.
Magnetic Reconnection↗
Fully nonlinear development of the most unstable goertler vortex in a three dimensional boundary layer
The nonlinear development is studied of the most unstable Gortler mode within a general 3-D boundary layer upon a suitably concave surface. The structure of this mode was first identified by Denier, Hall and Seddougui (1991) who demonstrated that the growth rate of this instability is O(G sup 3/5) where G is the Gortler number (taken to be large here), which is effectively a measure of the curvature of the surface. Previous researchers have described the fate of the most unstable mode within a 2-D boundary layer. Denier and Hall (1992) discussed the fully nonlinear development of the vortex in this case and showed that the nonlinearity causes a breakdown of the flow structure. The effect of crossflow and unsteadiness upon an infinitesimal unstable mode was elucidated by Bassom and Hall (1991). They demonstrated that crossflow tends to stabilize the most unstable Gortler mode, and for certain crossflow/frequency combinations the Gortler mode may be made neutrally stable. These vortex configurations naturally lend themselves to a weakly nonlinear stability analysis; work which is described in a previous article by the present author. Here we extend the ideas of Denier and Hall (1992) to the three-dimensional boundary layer problem. It is found that the numerical solution of the fully nonlinear equations is best conducted using a method which is essentially an adaption of that utilized by Denier and Hall (1992). The influence of crossflow and unsteadiness upon the breakdown of the flow is described.
Otto, S. R.↗
Off-design performance analysis of MHD generator channels
A computer code for performing parametric design point calculations, and evaluating the off-design performance of MHD generators has been developed. The program is capable of analyzing Faraday, Hall, and DCW channels, including the effect of electrical shorting in the gas boundary layers and coal slag layers. Direct integration of the electrode voltage drops is included. The program can be run in either the design or off-design mode. Details of the computer code, together with results of a study of the design and off-design performance of the proposed ETF MHD generator are presented. Design point variations of pre-heat and stoichiometry were analyzed. The off-design study included variations in mass flow rate and oxygen enrichment.
Wilson, D. R.↗
Non-volatile magnetic random access memory
Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.
Katti, Romney R.↗
Effects of heat-energy release from shock induced exothermic reactions on boundary-layer transition in shock-tube flows
Shock induced exothermic reactions on boundary layer transition in shock tube, investigating free stream thermal energy release effects
Belles, F. E.↗
The nonlinear development of Gortler vortices in growing boundary layers
The development of Gortler vortices in boundary layers over curved walls in the nonlinear regime is investigated. The growth of the boundary layer makes a parallel flow analysis impossible except in the high wavenumber regime so in general the instability equations must be integrated numerically. Here the spanwise dependence of the basic flow is described using Fourier series expansion whilst the normal and streamwise variations are taken into account using finite differences. The calculations suggest that a given disturbance imposed at some position along the wall will eventually reach a local equilibrium state essentially independent of the initial conditions. In fact, the equilibrium state reached is qualitatively similar to the large amplitude high wave-number solution described asymptotically by Hall (1982). In general, it is found that the nonlinear interactions are dominated by a mean field type of interaction between the mean flow and the fundamental. Thus, even though higher harmonics of the fundamental are necessarily generated, most of the disturbance energy is confined to the mean flow correction and the fundamental. A major result of the calculations is finding that the downstream velocity field develops a strongly inflection character as the flow moves downstream. The latter result suggests that the major effect of Gortler vortices on boundary layers of practical importance might be to make them highly receptive to rapidly growing Rayleigh modes of instability.
Hall, Philip↗