Search NASA⌕ Search

SEARCH · Search NASA

Results for “MONOLITH SEMICONDUCTOR”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

High conductance ohmic junction for monolithic semiconductor devices

In order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved.

Lewis, Carol R.↗
NASA NTRS1988

Method of making a high conductance ohmic junction for monolithic semiconductor devices

In order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved.

Lewis, Carol R.↗
NASA NTRS1992

Monolithic semiconductor light emitter and amplifier

A semiconductor light emitter comprising a substrate of a semiconductor material having a pair of opposed surfaces and a body of semiconductor material on one of the surfaces. The body includes a pair of clad layers of opposite conductivity types having an intermediate quantum well region therebetween. The clad layers are of a semiconductor material which forms a heterojunction with the material of the quantum well region. The clad layers and the quantum well region form a waveguide which extends along the body. A plurality of gain sections are formed in the body spaced along and optically coupled by the waveguide. Each of the gain sections is adapted to generate light therein when a voltage is placed thereacross. One of the gain section has gratings at each end thereof which are adapted to reflect light back into the one gain section and thereby create a beam of light. The grating between the one gain section and an adjacent gain section is adapted to allow some of the light generated in the one gain section to pass therethrough along the waveguide to the next gain section. Each of the other gain sections have gratings adjacent an end opposite the first gain sections. The periods of the grating are such that no self-oscillation of the light in the waveguide occurs so that each of the other gain sections serve as single pass amplifiers. The gratings also direct the amplified light from the other gain sections out of the body.

Carlson, Nils W.↗
NASA NTRS1983

Control of mutual phase locking of monolithically integrated semiconductor lasers

The degree of phase locking between the individual laser apertures is the major issue in phase-locked laser arrays. A description is presented of a series of experiments in which the mutual coherence of two laser apertures is characterized by measuring the visibility of the far-field interference fringes. Attention is given to an approach which makes it possible to control continuously the degree of coherence by means of a separate contact configuration. An investigation was conducted of the far-field radiation patterns of pairs of lasers obtained under various conditions. The results of the present study demonstrate the feasibility of controlling the mutual phase locking between semiconductor lasers by varying the gain distribution between their pumped stripes.

Kapon, E.↗
NASA NTRS1986

Semiconductor Laser With Two-Dimensional Beam Steering

Modification of monolithic semiconductor injection laser capable of one-dimensional electronic beam steering enables deflection of beam in second direction. Such laser chip provides beam pointing or raster scanning for applications in optical communications, data processing, image scanning, and optical ranging.

Katz, J.↗
DOE OSTI2017

ARPA-E: Actively Managing Projects to Accelerate Impact

The ARPA-E model is unique in that the agency does not just provide teams funding. Throughout the lifetime of an ARPA-E award, ARPA-E Program Directors and Tech-to-Market Advisors also provide teams with expert advice through quarterly reviews and onsite visits. This hands-on approach helps ensure teams can meet ambitious milestones, target and tackle problems early on, and advance their technologies towards commercialization. Program Director Dr. Isik Kizilyalli explains the importance of this active project management approach in helping teams identify and overcome barriers. In this video, Energy Storage Systems (ESS) from the GRIDS program and Monolith Semiconductors from the SWITCHES program discuss how ARPA-E’s active project management approach helped them find solutions to technical challenges.

25 ENERGY STORAGE↗
NASA NTRS2004

Self-contained sub-millimeter wave rectifying antenna integrated circuit

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Siegel, Peter H.↗
DOE OSTI2020

Highly Integrated WBG Power Module for Next Generation Plug-In Vehicles

Current inverter technologies used in electric vehicles (EVs) are bulky, heavy, and expensive. The performance of the inverter is also limited by the traditional Si-based semiconductor and packaging technology. These constraints are responsible for extra weight and volume in the vehicle that reduces the driving range along with usable space within the vehicle. Moreover, operating temperature restrictions, and boundaries on the inverter location within the vehicle drastically reduces the inverter performance. Thus an improved inverter design is required for next generation electric vehicles. The objective of this project was to research, develop and demonstrate a highly integrated WBG power module targeting the next generation of plugin hybrid electric vehicles (PHEVs). This power module needed to be functionally and mechanically optimized for General Motors (GM) traction inverter architecture. General Motors was the prime contractor, led the project, and oversaw the design, build, and test of the integrated power module. Virginia Polytechnic Institute and State University (VT) performed modeling and simulation tasks as well as power module design support. Monolith Semiconductor, Inc provided SiC dies and consulted on devices for the inverter. Oak Ridge National Laboratory (ORNL) performed power module technology evaluations, design evaluations of interconnect options, and performed material analysis and cross-sectioning of die activities.

33 ADVANCED PROPULSION SYSTEMS↗
NASA NTRS1983

Near-field measurement facility plans at Lewis Research Center

The direction of future antenna technology will be toward antennas which are large, both physically and electrically, will operate at frequencies up to 60 GHz, and are non-reciprocal and complex, implementing multiple-beam and scanning beam concepts and monolithic semiconductor devices and techniques. The acquisition of accurate antenna performance measurements is a critical part of the advanced antenna research program and represents a substantial antenna measurement technology challenge, considering the special characteristics of future spacecraft communications antennas. Comparison of various antenna testing techniques and their relative advantages and disadvantages shows that the near-field approach is necessary to meet immediate and long-term testing requirements. The LeRC facilities, the 22 ft x 22 ft horizontal antenna boresight planar scanner and the 60 ft x 60 ft vertical antenna boresight plant scanner (with a 60 GHz frequency and D/lamdba = 3000 electrical size capabilities), will meet future program testing requirements.

Sharp, R. G.↗
NASA NTRS2016

Monolithic High Power Semiconductor Seed Lasers near 2.05 µm

We report on the development and demonstration of a compact 2-micron semiconductor seed laser for CO2 lidar instruments. Our monolithic high-power fiber-pigtailed semiconductor seed laser will greatly enhance the operability and applicability of IPDA (Integrated Path Differential Absorption) lidar systems for high spatial and temporal resolution CO2 airborne measurements as well as future Earth-orbiting CO2 measurement missions. The compact semiconductor transmitter has a suitably narrow linewidth (less than 100 kilohertz) and enables flexible tuning (greater than 150 gigahertz) over several CO2 absorption lines in the 2.05-micron band.The frequency agility and multi-format modulation capability of the proposed technology, its small size and compatibility with standard DFB (Distributed FeedBack) lasers at the telecom band paves the way for adoption of the attractive 2.05-micron band for CO2 profiling and measurements.

Semiconductor Laser↗
NASA NTRS1994

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1995

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
DOE OSTI2017

High-gain monolithic 3D CMOS inverter using layered semiconductors

Here, we experimentally demonstrate a monolithic 3D integrated complementary metal oxide semiconductor (CMOS) inverter using layered transition metal dichalcogenide semiconductor N-channel (NMOS) and P-channel (PMOS) MOSFETs, which are sequentially integrated on two levels. The two devices share a common gate. Molybdenum disulphide and tungsten diselenide are used as channel materials for NMOS and PMOS, respectively, with an ON-to-OFF current ratio (I ON /I OFF ) greater than 106 and electron and hole mobilities of 37 and 236 cm 2 /Vs, respectively. The voltage gain of the monolithic 3D inverter is about 45 V/V at a supply voltage of 1.5 V and a gate length of 1 μm. This is the highest reported gain at the smallest gate length and the lowest supply voltage for any 3D integrated CMOS inverter using any layered semiconductor.

42 ENGINEERING↗
NASA NTRS1989

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗