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At least 19 records

W-Band On-Wafer Measurement of Uniplanar Slot-Type Antennas

Uniplanar slot-type antennas such as coplanar waveguide fed single- and dual-polarized slot-ring antennas and double folded-slot antennas are characterized using a millimeter-wave network analyzer and on-wafer measurement techniques. The antennas are designed to be mounted on a dielectric lens to minimize power loss into substrate modes and realize high-gain antenna patterns. On-wafer measurements are performed by placing the antenna wafer on a thick dielectric spacer of similar e(sub t) and eliminating the reflection from the probe station chuck with time-domain gating. The measured results agree well with method-of-moments simulations.

Raman, Sanjay↗

Novel On-wafer Radiation Pattern Measurement Technique for MEMS Actuator Based Reconfigurable Patch Antennas

The paper presents a novel on-wafer, antenna far field pattern measurement technique for microelectromechanical systems (MEMS) based reconfigurable patch antennas. The measurement technique significantly reduces the time and the cost associated with the characterization of printed antennas, fabricated on a semiconductor wafer or dielectric substrate. To measure the radiation patterns, the RF probe station is modified to accommodate an open-ended rectangular waveguide as the rotating linearly polarized sampling antenna. The open-ended waveguide is attached through a coaxial rotary joint to a Plexiglas(Trademark) arm and is driven along an arc by a stepper motor. Thus, the spinning open-ended waveguide can sample the relative field intensity of the patch as a function of the angle from bore sight. The experimental results include the measured linearly polarized and circularly polarized radiation patterns for MEMS-based frequency reconfigurable rectangular and polarization reconfigurable nearly square patch antennas, respectively.

Simons, Rainee N.↗

Beyond G-band : a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

high electron mobility transistors (HEMTs)↗

On-wafer vector network analyzer measurements in the 220-325 Ghz frequency band

We report on a full two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band. The test set utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C network analyzer. Two port on-wafer measurements are made with GGB Industries coplanar waveguide (CPW) probes. With this test set we have measured the WR3 band S-parameters of amplifiers on-wafer, and the characteristics of the CPW wafer probes. Results for a three stage InP HEMT amplifier show 10 dB gain at 235 GHz [1], and that of a single stage amplifier, 2.9 dB gain at 231 GHz. The approximate upper limit of loss per CPW probe range from 3.0 to 4.8 dB across the WR3 frequency band.

coplanar waveguides↗

Equipment for On-Wafer Testing From 220 to 325 GHz

A system of electronic instrumentation, constituting the equivalent of a two-port vector network analyzer, has been developed for use in on-wafer measurement of key electrical characteristics of semiconductor devices at frequencies from 220 to 325 GHz. A prior system designed according to similar principles was reported in Equipment for On-Wafer Testing at Frequencies Up to 220 GHz (NPO-20760), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 42. As one would expect, a major source of difficulty in progressing to the present higher-frequency-range system was the need for greater mechanical precision as wavelengths shorten into the millimeter range, approaching the scale of mechanical tolerances of prior systems. The system (see figure) includes both commercial off-the-shelf and custom equipment. As in the system of the cited prior article, the equipment includes test sets that are extended versions of commercial network analyzers that function in a lower frequency range. The extension to the higher frequency range is accomplished by use of custom frequency-extension modules that contain frequency multipliers and harmonic mixers. On-wafer measurement is made possible by waveguide wafer probes that were custom designed and built for this wavelength range, plus an on-wafer calibration substrate designed for use with these probes. In this case, the calibration substrate was specially fabricated by laser milling. The system was used to make the first on-wafer measurements of a semiconductor device in the frequency range from 220 to 320 GHz. Some of the measurement results showed that the device had gain.

Samoska, Lorene↗

On-Wafer Testing of Circuits Through 220 GHz

We have jointly developed the capability to perform on-wafer s-parameter and noise figure measurements through 220 GHz. S-parameter test sets have been developed covering full waveguide bands of 90-140 GHz (WR-08) and 140-220 GHz (WR-05). The test sets have been integrated with coplanar probes to allow accurate measurements on-wafer. We present the design and performance of the test sets and wafer probes. We also present calibration data as well as measurements of active circuits at frequencies as high as 215 GHz.

Gaier, Todd↗

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.

monolithic microwave integrated circircuit↗

NASA Tech Briefs, September 2008

Topics covered include: Nanotip Carpets as Antireflection Surfaces; Nano-Engineered Catalysts for Direct Methanol Fuel Cells; Capillography of Mats of Nanofibers; Directed Growth of Carbon Nanotubes Across Gaps; High-Voltage, Asymmetric-Waveform Generator; Magic-T Junction Using Microstrip/Slotline Transitions; On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz; Group-III Nitride Field Emitters; HEMT Amplifiers and Equipment for their On-Wafer Testing; Thermal Spray Formation of Polymer Coatings; Improved Gas Filling and Sealing of an HC-PCF; Making More-Complex Molecules Using Superthermal Atom/Molecule Collisions; Nematic Cells for Digital Light Deflection; Improved Silica Aerogel Composite Materials; Microgravity, Mesh-Crawling Legged Robots; Advanced Active-Magnetic-Bearing Thrust- Measurement System; Thermally Actuated Hydraulic Pumps; A New, Highly Improved Two-Cycle Engine; Flexible Structural-Health-Monitoring Sheets; Alignment Pins for Assembling and Disassembling Structures; Purifying Nucleic Acids from Samples of Extremely Low Biomass; Adjustable-Viewing-Angle Endoscopic Tool for Skull Base and Brain Surgery; UV-Resistant Non-Spore-Forming Bacteria From Spacecraft-Assembly Facilities; Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy; Simplified Modeling of Oxidation of Hydrocarbons; Near-Field Spectroscopy with Nanoparticles Deposited by AFM; Light Collimator and Monitor for a Spectroradiometer; Hyperspectral Fluorescence and Reflectance Imaging Instrument; Improving the Optical Quality Factor of the WGM Resonator; Ultra-Stable Beacon Source for Laboratory Testing of Optical Tracking; Transmissive Diffractive Optical Element Solar Concentrators; Delaying Trains of Short Light Pulses in WGM Resonators; Toward Better Modeling of Supercritical Turbulent Mixing; JPEG 2000 Encoding with Perceptual Distortion Control; Intelligent Integrated Health Management for a System of Systems; Delay Banking for Managing Air Traffic; and Spline-Based Smoothing of Airfoil Curvatures.

Source record↗

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

Weinreb, S.↗

160-190 GHz Monolithic Low Noise Amplifiers

This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

Kok, Y. L.↗

Reconfigurable Array Antenna Using Microelectromechanical Systems (MEMS) Actuators

The paper demonstrates a patch antenna integrated with a novel microelectromechanical systems (MEMS) actuator for reconfiguring the operating frequency. Experimental results demonstrate that the center frequency can be reconfigured by as much as 1.6 percent of the nominal operating frequency at K-Band In addition, a novel on-wafer antenna pattern measurement technique is demonstrated.

Simons, Rainee N.↗

High-Temperature RF Probe Station For Device Characterization Through 500 deg C and 50 GHz

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 C. The heating system uses a ceramic heater mounted on an insulating block of NASA shuttle tile material. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a Hewlett-Packard 8510C Network Analyzer to measure scattering parameters over a frequency range of 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540 C.

Schwartz, Zachary D.↗

Cryogenic probe station for use in automated microwave and noise figure measurements

A cryogenic measurement system capable of performing on-wafer RF testing of semiconductor devices and circuits has been developed. This 'CryoProbe Station' can wafer-probe devices and circuits at cryogenic temperatures, thus eliminating the need for wire bonds. The system operates under vacuum created by a sorption pump. It uses an open cycle cooling system that can be cooled with either liquid nitrogen or liquid helium. Presently, it can reach temperatures, as low as 80 K and 37 K for each of the coolants, respectively. The temperature can be raised using a heater and it is stabilized to within 0.2 K by use of a temperature controller. The CryoProbe Station features a 1 by 2 inch stage that can hold large circuits and calibration standards simultaneously. The system is used with a Hewlett Packard 8510C Automatic Network Analyzer (ANA) to obtain S-parameter data over the frequency range 0.045-26.5 GHz. S-parameter data on HEMT (high electron mobility transistors) devices has been obtained with this station. With the use of DEEMBED software from NIST, detailed transmission line studies have been performed. Although the CryoProbe Station is designed for frequencies up to 26.5 GHz, useful transmission line data has been obtained for frequencies as high as 40 GHz. The CryoProbe station has also been used with the ATN noise figure measurement system to perform automatic, temperature dependent noise figure measurements.

Taub, Susan R.↗

Temperature independent quantum well FET with delta channel doping

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Young, P. G.↗

On-Wafer Characterization of Millimeter-Wave Antennas for Wireless Applications

The paper demonstrates a de-embedding technique and a direct on-substrate measurement technique for fast and inexpensive characterization of miniature antennas for wireless applications at millimeter-wave frequencies. The technique is demonstrated by measurements on a tapered slot antenna (TSA). The measured results at Ka-Band frequencies include input impedance, mutual coupling between two TSAs and absolute gain of TSA.

Simons, Rainee N.↗

RF Properties of Epitaxial Lift-Off HEMT Devices

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

Young, Paul G.↗

HEMT Amplifiers and Equipment for their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Fung, King man↗