Retrospective dosimetry at the natural background level with commercial surface mount resistors
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Hayes, Robert B. (ORCID:0000000161354070)↗
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Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
PSL-AC-CP-1102-004-03: Electrostatic Discharge Simulator Kit Model 930D and Associated Current-Viewing Resistor (V.04)
This document provides instructions for calibrating the Electro-Tech (ETS) electrostatic discharge (ESD) simulator, Model 930D. The calibration shall meet the ± 5% specification for resistance and capacitance as specified in MIL-STD-331C 2009 newer. A series of direct measurements of the Device Under Test (DUT) output at 25 kV using a calibrated LeCroy HDO 6104 oscilloscope (or equivalent 1 MΩ) input impedance storage oscilloscope) are recorded through the 500-pF capacitor, 500-Ω resistor, and a 1-Ω Current Viewing Resistor (CVR). The certified value of the DUT's 25 kV output is calculated using Ohms Law and the certified system resistance and capacitance described in this procedure. Read this document in its entirety before proceeding with the calibration.
42 ENGINEERING↗
Imaginary resistor based Parity-Time symmetry electronics dimers
An approach of fabricating Parity-Time symmetry electronic dimers circuits is demonstrated using an imaginary resistor Z whose impedance is frequency independent. Remarkably, the dynamic rate equations of the coupled oscillators so-called ZRC dimers, uniquely consist of first order partial differential equations which result in a 2 ×2 effective Hamiltonians commuting with the joint Parity-Time (PT) operator. The method helps in describing two groups of PT symmetry electronics. The first group has an eigenspectrum that displays a single spontaneous PT transition or a thresholdless (THL) PT transition. The second group is a PT transitionless normal mode spectrum with essentially negative values of capacitors. The dynamics indicate that the system exhibits high frequencies propagation when operation is done before the thresholdless point is reached. The transitionless regime indicates an equilibrium point in the coupling for which the system turns to be conservative regardless the gain/loss values, and beyond which the gain/loss remarkably decays/amplifies wave. In addition, we observe a value of gain/loss above which there is a limitation of signal amplification.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
A two-dimensional resistor network model for transition-edge sensors with normal metal features
Transition-edge sensors (TESs) can be used in high-resolution photon detection, exploiting the steep slope of the resistance in the superconducting-to-normal transition edge. Normal metal bars on the TES film are commonly used to engineer its transition shape, namely the dependence of resistance on temperature and current. This problem has been studied in one dimension, but until now, there have been no predictive models of the influence of two-dimensional (2-D) normal metal features on the TES transition shape. Here, we approach this problem by treating the TES as a 2-D network of resistors, the values of which are based on the two-fluid model. We introduce a study of the behavior of devices with different 2-D geometric features. Our 2-D network model is capable of predicting how typical TES geometry parameters, such as number of bars, bar spacing, and overall dimensions, influence device behavior and thus is a powerful tool to guide the engineering of new TES devices.
2-D resistors network↗
Artificial spin ice phase-change memory resistors
Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Analog Neural Network Inference Accuracy in One-Selector One-Resistor Memory Arrays.
Abstract not provided.
Kim, Joshua↗
Monitoring the Structural Health of the Stage-Four Gibbs Resistor In Order to Maintain a Functioning Pulse-Forming Network
The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility at Los Alamos National Laboratory (LANL) is a critical facility used for nuclear weapons research and development (Los Alamos National Laboratory). Its primary function is to provide high-resolution, real-time images of the behavior of materials under extreme conditions, specifically during the hydrodynamic testing of nuclear weapons surrogates. The facility uses advanced radiographic techniques, such as dual-axis X-ray imaging, to capture detailed snapshots of these materials as they react to high-pressure environments. DARHT plays a key role in maintaining the safety, security, and reliability of the U.S. nuclear arsenal, supporting the Stockpile Stewardship Program. The facility helps ensure that nuclear weapons perform as designed without the need for nuclear tests. Its dual-axis radiography provides more precise data than traditional single-axis imaging, offering a comprehensive view of the internal dynamics of a weapon's primary stage.
42 ENGINEERING↗
Thermal Vulnerability of Potted Surface Mount Resistors And What to Do About It
Epoxy-potted surface mount electrical components are shown to be vulnerable to thermal stress. An alternate coating is shown to relieve that stress.
Limmer, Joel David [Sandia National Laboratories (↗
Automating Data Analysis for High Voltage Resistors on MMS 2260.
Abstract not provided.
McBride, Megan↗
Quench-Back Management for Fast Decaying Currents in SHMS Superconducting Magnets at Jefferson Lab
The Super High Momentum Spectrometer (SHMS) of Hall C, part of the 12-GeV upgrade at Jefferson Lab, was successfully commissioned in 2017. Early operation demonstrated that fast current dumps decays of the SHMS Q2/Q3 and dipole superconducting magnets triggered quenches, causing some level of operational difficulty. Tests and detailed assessments suggest that nonquench induced fast current decay could result in substantial ac loss in the conductor and subsequently trigger a quench-back effect. The OPERA/ELECTRA software package was used to calculate the amount of heat deposited in the copper stabilizer from a fast current decay. The resistances of external energy dump resistors were lowered to slow the fast dumping of the magnet's current to reduce or eliminate the quench-back effect. A worst-case adiabatic quench scenario was analyzed, assuming no external dump resistor and no liquid helium surrounding the coil, to ensure the safety of the magnets. The stress levels in the coil imposed by winding, collaring preload, Lorentz force, and temperature gradient during a quench were also examined. The Tsai-Wu material failure criterion was used to determine the acceptable combined stress level. Linear orthotropic analysis of the coil indicates that the magnets can be operated safely with appropriately sized dump resistors. Fast dump tests with the modified dump resistors have been planned to verify the performance and suitability.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Zero-Cost Closed-Loop Discharging Method for Modular Multilevel Converter Submodules Without External Circuits
A novel submodule capacitor discharging control strategy is introduced and implemented for modular multilevel converters (MMCs). By sequentially controlling the arm currents of anMMC,all submodule capacitors are discharged rapidly through internal arm resistors without additional devices and circuits, resulting in improved performance and reduced cost. A closed-loop control method is explored for the effectiveness of the new control strategy.Acomparison study is evaluated between the proposed method and the traditional methods using bleeding resistors, auxiliary resistors, and load resistors. Confirmed by the simulation and experiment, the proposed method has the maximum benefits including zero hardware cost, fast discharging time, and negligible load current impact
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization
High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.
42 ENGINEERING↗
Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch
One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.
42 ENGINEERING↗
Low-Power Characterization and Integration of Carbon Black Resistive Ink for Aerosol Jet-Printed RF Components
Aerosol jet printing (AJP) is gaining attention in additive manufacturing research, especially in the discipline of microwave engineering. Currently, no reliable AJP method exists to fabricate resistors that are both electrically small and with a resistance compatible with waveguide impedances for use in microwave components. In this work, the commercially available Metalon JR-038 is characterized and used to fabricate a resistor that is 100 μ m long by 250 μ m wide for the first time to the best of our knowledge. Furthermore, this resistor was then used to fabricate a Ka-band Wilkinson power divider using only the AJP process.
36 MATERIALS SCIENCE↗
Varistors: A Useful Tool for Superconducting Magnet Quench Protection
A perfect varistor is a constant voltage resistor as a function of current through the resistor. A perfect varistor can't exist, because its resistance would be infinite at zero current. In electronic devices, varistors are often used as surge protectors. A varistor can be used in place of an ordinary resistor as the discharge resistance across superconducting coil sections. When used this way, the integral of I 2 dt during the discharge can be reduced by almost one third. When a varistor is used for quench protection of coils that are coupled to shorted secondary circuits the integral of I 2 dt can be reduced much more. Furthermore, this can be a key factor when coil current densities and stored energies are high as in many potential HTS magnet systems. This paper discusses the types of varistors that are commercially available and their characteristics.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
RHIC Injection Kicker Measurement and Emittance Growth Simulation
RHIC operations with gold beams at energies below the design injection energy of 10.5 GeV/N requires the injection of long bunches to mitigate the effects of IBS and space charge [1]. Bunch lengths can be up to 60 ns in length at 3.85 GeV/N (to be compared to normal 35 ns proton bunch e s at 25 GeV). Injection of such long bunches requires revisiting the details of the injection magnet pulse to insure sufficient transfer efficiency from the AGS to RHIC. This note details beam-based measurements of the deflection provided by the injection kicker magnet as a function of bunch arrival time using two different terminating resistors: a 25 Ω resistor, which has been standard for several years, and a 40 Ω resistor, which more nearly represents a matched termination. The measured deflection curves are then used as inputs into a simple simulation to estimate the effects of the kicker rise time and shape (flatness) on the transverse emittance of the injected and circulating bunches. The simulat ions indicate that there is a 12 % intrinsic vertical emittance growth associated with the standard 25 Ω kicker configuration not only for the long low energy bunches, but also for nominal 35 ns long polarized proton bunches at the nominal 25 GeV injection energy.
43 PARTICLE ACCELERATORS↗
High voltage switch with cascaded transistor topology
A switching apparatus includes three or more series-connected transistors, and it further includes a balancing network. The balancing network includes a resistor network configured to divide a voltage from a voltage source across the series-connected transistors. The resistor network includes at least two resistive legs connected in parallel. In each resistive leg, two or more resistors are connected in series. The balancing network may further comprise at least one capacitive leg of series-connected capacitors connected across the series-connected transistors, and it may further comprise at least one leg of series-connected avalanche diodes connected across the series-connected transistors for overvoltage protection. In example embodiments, the series-connected transistors are JFETs. In other example embodiments, the series-connected transistors may be HEMTs or GaN transistors.
Gill, Lee↗