Results for “SEM”

NASA NTRSDate not supplied

Variable Pressure - Scanning Electron Microscopy (VP-SEM)

Variable Pressure (or Environmental) Scanning Electron Microscopy (VP-SEM) combined with Energy Dispersive X-ray Spectroscopy (EDS) is one of the most powerful methods for characterizing the sub-micron topography and chemical composition of uncoated samples. Terrestrially, VP-SEM is extensively used to non-destructively study geologic and manufactured materials with high spatial resolution (tens of nanometers) and large depth-of-field. An SEM offers a geologist a first survey of microscopic mineral phases via secondary electron imaging (SEI), which provides a topographic look at a sample, as well as backscattered electron (BEI) imaging, which contrasts the phases present based on their geochemistry (atomic number). A VP-SEM utilizes a gas in the sample chamber as a charge dissipation and signal amplification method, allowing analysis of a sample without preparation in the form of a conductive coating. A miniaturized VP-SEM operating in-situ on a lander or rover would be able to use the CO2-rich Martian atmosphere (e.g., Nier et al., 1976; Williams 2016) as an imaging medium for this purpose. Adaptation of a VP-SEM for in-situ Mars surface studies will provide a new imaging capability (via SEI) that is at least an order of magnitude higher resolution than the Mars Hand Lens Imager (MAHLI) on the Mars Science Laboratory (Williams et al., 2015), and equal to or better than the achieved resolution of the Atomic Force Microscope on the Phoenix Mars lander (Pike et al., 2011). In addition, the MVP-SEM is capable of BSI and simultaneous chemical analysis of the imaged region. In this sense, the MVP-SEM can be regarded as an instrument suite that will provide a new set of information not achievable by any other instrument. The Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM) was designed, built, and benchtop tested by a team at NASA’s Marshall Space Flight Center and Jet Propulsion Laboratory (JPL), Jacobs Space Exploration Group, Applied Physics Technologies, Inc. (AP-Tech), and Creare LLC, working with a team of technical and science collaborators. Benchtop testing was successful, proving concept feasibility. To date, the MVP-SEM has achieved an imaging resolution of <100 nm in the lab, and with continued optimization, even better performance (~50 nm resolution) is possible. Use in-situ on the lunar or other planetary surfaces would require some redesign to optimize instrument performance, but such an instrument would be equally useful.

Variable Pressure Scanning Electron Microscopy↗

NASA NTRSDate not supplied

Miniature Variable Pressure - Scanning Electron Microscopy (MVP-SEM)

Variable Pressure (or Environmental) Scanning Electron Microscopy (VP-SEM) combined with Energy Dispersive X-ray Spectroscopy (EDS) is one of the most powerful methods for characterizing the sub-micron topography and chemical composition of uncoated samples. Terrestrially, VP-SEM is extensively used to non-destructively study geologic and manufactured materials with high spatial resolution (tens of nanometers) and large depth-of-field. An SEM offers a geologist a first survey of microscopic mineral phases via secondary electron imaging (SEI), which provides a topographic look at a sample, as well as backscattered electron (BEI) imaging, which contrasts the phases present based on their geochemistry (atomic number). A VP-SEM utilizes a gas in the sample chamber as a charge dissipation and signal amplification method, allowing analysis of a sample without preparation in the form of a conductive coating. A miniaturized VP-SEM operating in-situ on a lander or rover would be able to use the CO2-rich Martian atmosphere (e.g., Nier et al., 1976; Williams 2016) as an imaging medium for this purpose. Adaptation of a VP-SEM for in-situ Mars surface studies will provide a new imaging capability (via SEI) that is at least an order of magnitude higher resolution than the Mars Hand Lens Imager (MAHLI) on the Mars Science Laboratory (Williams et al., 2015), and equal to or better than the achieved resolution of the Atomic Force Microscope on the Phoenix Mars lander (Pike et al., 2011). In addition, the MVP-SEM is capable of BSI and simultaneous chemical analysis of the imaged region. In this sense, the MVP-SEM can be regarded as an instrument suite that will provide a new set of information not achievable by any other instrument. The Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM) was designed, built, and benchtop tested by a team at NASA’s Marshall Space Flight Center and Jet Propulsion Laboratory (JPL), Jacobs Space Exploration Group, Applied Physics Technologies, Inc. (AP-Tech), and Creare LLC, working with a team of technical and science collaborators. Benchtop testing was successful, proving concept feasibility. To date, the MVP-SEM has achieved an imaging resolution of <100 nm in the lab, and with continued optimization, even better performance (~50 nm resolution) is possible. Use in-situ on the lunar or other planetary surfaces would require some redesign to optimize instrument performance, but such an instrument would be equally useful.

Variable Pressure Scanning Electron Microscopy↗

NASA NTRS2016

A Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM) for In-Situ Mars Surface Sample Analysis

The Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM) project, funded by the NASA Planetary Instrument Concepts for the Advancement of Solar System Observations (PICASSO) Research Opportunities in Space and Earth Sciences (ROSES), will build upon previous miniaturized SEM designs and recent advancements in variable pressure SEM's to design and build a SEM to complete analyses of samples on the surface of Mars using the atmosphere as an imaging medium. This project is a collaboration between NASA Marshall Space Flight Center (MSFC), the Jet Propulsion Laboratory (JPL), electron gun and optics manufacturer Applied Physics Technologies, and small vacuum system manufacturer Creare. Dr. Ralph Harvery and environmental SEM (ESEM) inventor Dr. Gerry Danilatos serve as advisors to the team. Variable pressure SEMs allow for fine (nm-scale) resolution imaging and micron-scale chemical study of materials without sample preparation (e.g., carbon or gold coating). Charging of a sample is reduced or eliminated by the gas surrounding the sample. It is this property of ESEMs that make them ideal for locations where sample preparation is not yet feasible, such as the surface of Mars. In addition, the lack of sample preparation needed here will simplify the sample acquisition process and allow caching of the samples for future complementary payload use.

Microscope↗

NASA NTRS2016

A Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM) for the Surface of Mars: An Instrument for the Planetary Science Community

The Miniaturized Variable Pressure Scanning Electron Microscope(MVP-SEM) project, funded by the NASA Planetary Instrument Concepts for the Advancement of Solar System Observations (PICASSO) Research Opportunities in Space and Earth Science (ROSES), will build upon previous miniaturized SEM designs for lunar and International Space Station (ISS) applications and recent advancements in variable pressure SEM's to design and build a SEM to complete analyses of samples on the surface of Mars using the atmosphere as an imaging medium. By the end of the PICASSO work, a prototype of the primary proof-of-concept components (i.e., the electron gun, focusing optics and scanning system)will be assembled and preliminary testing in a Mars analog chamber at the Jet Propulsion Laboratory will be completed to partially fulfill Technology Readiness Level to 5 requirements for those components. The team plans to have Secondary Electron Imaging(SEI), Backscattered Electron (BSE) detection, and Energy Dispersive Spectroscopy (EDS) capabilities through the MVP-SEM.

Mars↗

NASA NTRS2000

SEM Characterization of Extinguished Grains from Plasma-Ignited M30 Charges

M30 propellant grains that had been ignited in interrupted closed bomb experiments were characterize by scanning electron microscopy (SEM). Previous chemical analysis of extinguished grains had given no indications of plasma-propellant chemical interactions that could explain the increased burning rates that had been previously observed in full-pressure closed bomb experiments. (This does not mean that there is no unique chemistry occurring with plasma ignition. It may occur very early in the ignition event and then become obscured by the burning chemistry.) In this work, SEM was used to look at grain morphologies to determine if there were increases in the surface areas of the plasma-ignited grains which would contribute to the apparent increase in the burning rate. Charges were made using 30 propellant grains (approximately 32 grams) stacked in two tiers and in two concentric circles around a plastic straw. Each grain was notched so that, when the grains were expelled from the bomb during extinguishment, it could be determined in which tier and which circle each grain was originally packed. Charges were ignited in a closed bomb by either a nickel wire/Mylar-capillary plasma or black powder. The bomb contained a blowout disk that ruptured when the pressure reached 35 MPa, and the propellant was vented into a collection chamber packed with polyurethane foam. SEM analysis of the grains fired with a conventional black powder igniter showed no signs of unusual burning characteristics. The surfaces seemed to be evenly burned on the exteriors of the grains and in the perforations. Grains that had been subjected to plasma ignition, however, had pits, gouges, chasms, and cracks in the surfaces. The sides of the grains closest to the plasma had the greatest amount of damage, but even surfaces facing the outer wall of the bomb had small pits. The perforations contained gouges and abnormally burned regions (wormholes) that extended into the web. The SEM photos indicated that a grain from the top tier, which was farther away from the plasma ignition source, sustained more plasma-induced damage to the perforations and the web than did the grains on the bottom tier.

Kinkennon, A.↗

NASA NTRS1977

Application of the SEM to the measurement of solar cell parameters

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗

NASA NTRS1977

Application of the SEM to the measurement of solar cell parameters

A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗

NASA NTRS1980

The SEM description of interaction of a transient electromagnetic wave with an object

The singularity expansion method (SEM), proposed as a means for determining and representing the transient surface current density induced on a scatterer by a transient electromagnetic wave is described. The resulting mathematical description of the transient surface current on the object is discussed. The data required to represent the electromagnetic scattering properties of a given object are examined. Experimental methods which were developed for the determination of the SEM description are discussed. The feasibility of characterizing the surface current induced on aircraft flying in proximity to a lightning stroke by way of SEM is examined.

Pearson, L. W.↗

NASA NTRSDate not supplied

Examination of Lunar Regolith Simulants By SEM-EDS and Imaging Raman Spectroscopy

The Artemis series lunar missions will include sample returns from the lunar south pole. Lunar regolith simulants (RS) generated in the lab provide opportunities to compare two surface science techniques: scanning electron microscopy (SEM-EDS) and Raman induced surface spectroscopy. The results will also be applicable for supporting future commercial lunar payload services (CLPS) and Artemis surface. Surface characterization contributes to continued development of lunar regolith studies and adds to various regolith databases. In characterizing various lunar regolith simulants, part of the aim should be to standardize techniques and utilize anticipated methods available for astromaterials studied during, or returned from, upcoming missions, particularly samples collected from the Moon’s south pole and permanently shadowed regions (PSRs).. An initial survey of available simulants has been started with Raman scanning process for particle counting the results of which will enrich the NASA-JSC Simulant Development Lab (SDL) simulant properties database and the Colorado School of Mines Planetary Simulant Data Base. An SEM-EDS dataset of raw regolith simulant materials are collected.

Raman Microscopy↗

NASA NTRS1977

SEM analysis of ionizing radiation effects in linear integrated circuits

A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.

Stanley, A. G.↗

NASA NTRS1987

Nondestructive SEM for surface and subsurface wafer imaging

The scanning electron microscope (SEM) is considered as a tool for both failure analysis as well as device characterization. A survey is made of various operational SEM modes and their applicability to image processing methods on semiconductor devices.

Propst, Roy H.↗

NASA NTRS1987

In-situ thermal cycling in SEM of a graphite-aluminum composite

In situ SEM observations of a graphite-aluminum composite (unidirectional P100 graphite-fiber-reinforced 6061 aluminum MMC plates) were used to measure displacements within the graphite fiber relative to the interface between the graphite fiber and the aluminum matrix during thermal cycling. Specimens were thermally cycled from room temperature to 300 C or 500 C in a SEM chamber and then cooled to room temperature. The obtained shear strains within the fiber were then related to anomalous values of measured residual stresses and to the impact on the composite coefficient of expansion and potential damage under thermal fatigue loading. The shear mechanism was proposed as a source of temperature limits on the low coefficient of expansion of these composites, as well as a potential source of thermal fatigue degradation.

Cheong, Y. M.↗

NASA NTRS1992

Payload isolation and stabilization by a Suspended Experiment Mount (SEM)

Many Space Shuttle and Space Station payloads can benefit from isolation from crew or attitude control system disturbances. Preliminary studies have been performed for a Suspended Experiment Mount (SEM) system that will provide isolation from accelerations and stabilize the viewing direction of a payload. The concept consists of a flexible suspension system and payload-mounted control moment gyros. The suspension system, which is rigidly locked for ascent and descent, isolates the payload from high frequency disturbances. The control moment gyros stabilize the payload orientation. The SEM will be useful for payloads that require a lower-g environment than a manned vehicle can provide, such as materials processing, and for payloads that require stabilization of pointing direction, but not large angle slewing, such as nadir-viewing earth observation or solar viewing payloads.

Bailey, Wayne L.↗

NASA NTRS1999

Space Experiment Module (SEM)

The Space Experiment Module (SEM) Program is an education initiative sponsored by the National Aeronautics and Space Administration (NASA) Shuttle Small Payloads Project. The program provides nationwide educational access to space for Kindergarten through University level students. The SEM program focuses on the science of zero-gravity and microgravity. Within the program, NASA provides small containers or "modules" for students to fly experiments on the Space Shuttle. The experiments are created, designed, built, and implemented by students with teacher and/or mentor guidance. Student experiment modules are flown in a "carrier" which resides in the cargo bay of the Space Shuttle. The carrier supplies power to, and the means to control and collect data from each experiment.

Brodell, Charles L.↗

NASA NTRS1974

Microcircuit failure analysis using the SEM

The scanning electron microscope adds a new dimension to the knowledge that can be obtained from a failed microcircuit. When used with conventional techniques, SEM assists and clarifies the analysis, but it does not replace light microscopy. The most advantageous features for microcircuit analysis are long working distances and great depth of field. Manufacturer related failure modes of microcircuits are metallization defects, poor bonding, surface and particle contamination, and design and fabrication faults. User related failure modes are caused by abuse, such as overstress. The Physics of Failure Procedure followed by the Astrionics Laboratory in failure analysis is described, which is designed to obtain maximum information available from each step.

Nicolas, D. P.↗

NASA NTRS1976

Study of SEM induced current and voltage contrast modes to assess semiconductor reliability

The purpose of the scanning electron microscopy study was to review the failure history of existing integrated circuit technologies to identify predominant failure mechanisms, and to evaluate the feasibility of their detection using SEM application techniques. The study investigated the effects of E-beam irradiation damage and contamination deposition rates; developed the necessary methods for applying the techniques to the detection of latent defects and weaknesses in integrated circuits; and made recommendations for applying the techniques.

Beall, J. R.↗

NASA NTRS1979

SEM probe of IC radiation sensitivity

Scanning Electron Microscope (SEM) used to irradiate single integrated circuit (IC) subcomponent to test for radiation sensitivity can localize area of IC less than .03 by .03 mm for determination of exact location of radiation sensitive section.

Gauthier, M. K.↗

NASA NTRS1979

Analysis of the interaction of an electron beam with a solar cell. III - The effect of spacial variations of the number density of recombination centers on SEM measurements

By means of an exactly soluble model the short circuit current generated by a scanning electron microscope in a P-N junction has been determined in cases where the trap density is inhomogeneous. The diffusion length for minority carriers becomes then dependent on the spacial coordinates. It is shown that in this case the dependence of the Isc on characteristic parameters as cell thickness, distance of the beam excitation spot from ohmic contacts, etc., becomes very intricate. This fact precludes the determination of the local diffusion length in the usual manner. Although the model is somewhat simplified in order to make it amenable to exact solutions, it is nevertheless realistic enough to lead to the conclusion that SEM measurements of bulk transport parameters in inhomogeneous semiconductor material are impractical since they may lead to serious errors in the interpretation of the data by customary means.

Von Roos, O.↗