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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Design and Testing of a Hard-Fault Protection Circuit for a 1 kV SiC MOSFET Inverter

Due to increasingly high DC link voltages and further advancements in the current density of silicon carbide (SiC) MOSFETs, it has become evident that conventional IGBT protection methods are not sufficient to prevent exceeding the current rating of these devices during low-inductance fault events. This paper explores the use of an air core Rogowski coil topology to mitigate these hard fault events. The design of this circuit resulted in safe shutdown of a low impedance phase-to-phase fault in under one microsecond, tested up to DC link voltages of 1 kV. This paper details the theory, design, simulation, and successful test results of this method.

hard fault protection↗
NASA NTRSDate not supplied

Design and Development of a Fluid Immersion Cooled, SiC MOSFET, 37.5 kW, Bi-Directional Motor Converter

NASA's SUb-sonic Single Aft eNgine (SUSAN) aircraft is a concept aircraft whose architecture is that of a subsonic regional jet transport aircraft. SUSAN contains a single turbofan engine coupled to an electrified aircraft propulsion (EAP) system. To provide a path towards this goal, a 25% scale version of the SUSAN aircraft is being researched. A main component of the 25% power train is the Motor And Generator Intelligent Converter (MAGIC). This paper presents the design, development, and initial test results from MAGIC, a 37.5 kW, fluid immersion cooled, silicon carbide (SiC) MOSFET-based, bi-directional converter and controller.

PAO↗
NASA NTRSDate not supplied

Design and Development of a Fluid Immersion Cooled, SiC MOSFET, 37.5 kW, Bi-Directional Motor Converter

NASA's SUb-sonic Single Aft eNgine (SUSAN) aircraft is a concept aircraft whose architecture is that of a subsonic regional jet transport aircraft. SUSAN contains a single turbofan engine coupled to an electrified aircraft propulsion (EAP) system. To provide a path towards this goal, a 25% scale version of the SUSAN aircraft is being researched. A main component of the 25% power train is the Motor And Generator Intelligent Converter (MAGIC). This paper presents the design, development, and initial test results from MAGIC, a 37.5 kW, fluid immersion cooled, silicon carbide (SiC) MOSFET-based, bi-directional converter and controller.

Immersion↗
NASA NTRS2018

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

Single-event burnout↗
NASA NTRS2018

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

silicon carbide↗
NASA NTRS2016

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Ikpe, Stanley A.↗
NASA NTRS2019

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.

Mcpherson, Joseph A.↗
NASA NTRS2017

Radiation Hardness Study on SiC Power MOSFETs

As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).

SiC↗
NASA NTRS2019

Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs

Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length. The Prediction of Solar particle Yields for Characterizing Integrating Circuits code is used to calculate a cumulative density function for the fluence of the environment. The lethal ion method is then used to determine what proportion of the environment will cause single-event-burnout. The operating voltage determines the lowest linear-energy-transfer particle that will cause single-event-burnout and that should be included in the environment distribution. The shielding and mission length also determine the final environment distribution of the mission fluence. Through calculating the reliability for different operating voltages, shielding, and mission length for a specific device, it is shown that shielding thickness and operating voltage have a large effect on reliability and can be traded off during the design.

Heavy ion↗
NASA NTRS2020

Update on Wide Bandgap (WBG) Device Radiation Hardness Assurance

This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.

wide bandgap↗
NASA NTRS2019

Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC Converters

The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.

SiC MOSFET↗
NASA NTRS2019

A Simple Control to Reduce the Voltage Stress of Non-Conducting Switches in Three-Level ANPC Converter

With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices is increased, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage of non-conducting switches can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the over-voltage for the non-conducting switch. It is found that the nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing any additional hardware circuit is proposed to attenuate the impact of the nonlinearity. With the proposed control, the peak over-voltage of the non-conducting switch can be reduced significantly. Multi-pulse test is conducted for a 3L- ANPC converter built with silicon carbide (SiC) MOSFETs. The testing results show that the peak over-voltage decreases from 892 V to 624 V with the proposed control. More detailed analysis and experimental results will be provided in the final paper.

SiC MOSFET↗
NASA NTRS2019

Modeling and Mitigation of Multi-Loops Related Device Overvoltage in Three Level Active Neutral Point Clamped Converter

This paper establishes an analytical model for the device drain-source overvoltage related to the two loops in three level active neutral point clamped (3L-ANPC) converters. Taking into account the non-linear device output capacitance, two commonly used modulations are investigated in detail. The result shows that the line switching frequency device usually has higher overvoltage, and the switching speed of the high switching frequency device is not strongly influenced by the multiple loops. By keeping the non-active clamping switch off, the effect of the non-linear device output capacitance can be significantly mitigated, which helps reduce the overvoltage. Moreover, the loop inductance can be reduced with vertical loop layout and magnetic cancellation in PCB and busbar design. A 500 kVA 3L-ANPC converter using SiC MOSFETs is built and tested. The experimental results validate the overvoltage model of the two modulations as well as the busbar design. With the non-active clamping switch off, the overvoltage of both the high and line switching frequency devices is significantly reduced, which helps achieve higher switching speed.

Model↗
NASA NTRSDate not supplied

Hard Fault Protection for a Silicon Carbide-Based Aerospace Motor Drive

Due to increasingly high DC link voltages and further advancements in the current density of silicon carbide (SiC) MOSFETs, it has become evident that conventional IGBT protection methods are not sufficient to protect these devices from overcurrent during low-inductance fault events. The use of an air core Rogowski coil topology was explored to see if it could mitigate these hard fault events. The design of this circuit resulted in safe shutdown of a low impedance phase-tophase fault, tested up to DC link voltages of 1 kV.

High Voltage↗