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The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).
This paper reports heavy ion and proton-induced single event effect (SEE) results from recent tests for a variety of microelectronic devices. The compendium covers devices tested over the last two years by the Jet Propulsion Laboratory.
The Analog Devices ADV212 was initially tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in July of 2013. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI), soft data errors classified as single event upsets (SEU), and, of particular concern, single event latch-ups (SEL). All error types occurred so frequently as to make accurate measurements of the exposure time, and thus total particle fluence, challenging. To mitigate some of the risk posed by single event latch-ups, circuitry was added to the electrical design to detect a high current event and automatically recycle power and reboot the device. An additional heavy-ion test was scheduled to validate the operation of the recovery circuitry and the continuing functionality of the ADV212 after a substantial number of latch-up events. As a secondary goal, more precise data would be gathered by an improved test method, described in this test report.
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
The Linear Technology (LT) LT2078 was tested for single event effect (SEE) at the Texas A&M University Cyclotron Facility (TAMU) on 11 April 2015. The device was exercised in varied load conditions to replicate its intended application with concerns about destructive effects on the commercial device.
This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.
Single event effects measurements were conducted on an ACPL-785E optocoupler at NASA Space Radiation Laboratory. Measurements with a periodic input signal show single event transients and a radiation-induced time delay of the output signal.
Single event effects measurements were conducted on a ACPL-785E optocoupler at NASA Space Radiation Laboratory. Measurements with a periodic input signal show single event transients and a radiation-induced time delay of the output signal.
The purpose of this test was to characterize single event effects (SEE) in the LCMXO3D-9400HC-5BG484I, a low power and low density field programmable gate array (FPGA). The SEE concerns for the device that were investigated in this testing are single event upsets (SEUs) in the configuration static random-access memory (SRAM), SEUs in the FPGA fabric, single event latch up (SEL), and single event functional interrupts (SEFIs). Testing was conducted at Lawrence Berkeley National Laboratory (LBNL) on August 26th, 2024 and August 28th, 2024.
The Analog Devices ADXL354 3-AXIS MEMS accelerometer was tested for single-event effects, both destructive and non-destructive. The device was characterized for single-event upset (SEU) sensitivity and evaluated for any possibility of single-event latchup (SEL), single-event dielectric rupture (SEDR) and single-event functional interrupts (SEFI). Single-event transient (SET) response was also monitored.
The Texas Instruments'™ (TI) MAX4595 was tested for single event latch-up (SEL) response at the Texas A&M University Cyclotron Facility (TAMU) on 26 October 2014. The device was exercised in varied load conditions to replicate its intended application with concerns about destructive effects on the commercial device.
The performance of Michigan State University's Single-Event Effects Test Facility (SEETF) during its inaugural runs is evaluated. Beam profiles and other diagnostics are presented, and prospects for future development and testing are discussed.
The purpose of this test was to characterize the single-event effects (SEE) susceptibility of the Texas Instrument (TI) DRV8881 2.5A Dual H-Bridge Motor Driver. The device’s output was monitored for changes during exposure to heavy-ions at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. The main goal of testing was to test for destructive SEEs. Nondestructive SEEs were recorded during testing but not fully characterized. Testing was performed on November 9th and 11th, 2022.
The results of a destructive single-event effect susceptibility radiation test of the PNI RM3100 magnetometer sensor, specifically the MagI 2 C ASIC (application-specific integrated circuit) on the sensor board are presented. The sensor is a low-resource commercial off-the-shelf (COTS) magneto-inductive magnetometer. The device was monitored for destructive events and functional interruptions during exposure to a heavy ion beam at the Lawrence Berkeley National Laboratory's 88′′ Cyclotron. The RM3100 did not experience any destructive single-event effects when irradiated to a total fluence of 1.4 × 10 7 cm −2 at an effective linear energy transfer (LET) of 76.7 MeV cm 2 mg −1 while operated at nominal voltage (3.3 V) and elevated temperature (85 ∘C). When these results are combined with previous total ionizing dose tests showing no failures up to 150 kRad (Si), we conclude that the PNI RM3100 is extremely radiation tolerant and can be used in a variety of space environments.
This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.
We present single-event effect (SEE) test results and analysis produced by NASA JSC in 2023 for candidate electronic components and devices. Test environments include heavy ions or protons, depending on the intended use case regarding mission, environment, application, and lifetime.
This study is to determine the heavy ion induced single event effect (SEE) susceptibility of the Qorvo’s NBB-400 cascadable broadband GaAs amplifier DC to 8GHz.