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Results for “charge-coupled devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Charge-coupled device image sensor study

The design specifications and predicted performance characteristics of a Charge-Coupled Device Area Imager and a Charge-Coupled Device Linear Imager are presented. The Imagers recommended are intended for use in space-borne imaging systems and therefore would meet the requirements for the intended application. A unique overlapping metal electrode structure and a buried channel structure are described. Reasons for the particular imager designs are discussed.

Source record↗
NASA NTRS1972

Fast-interface-state losses in charge-coupled devices.

A simple model is presented that makes it possible to predict signal losses in charge-coupled devices due to fast-interface-state trapping. Presented experimental losses in a twelve-bit two-phase charge-coupled device with overlapping Si and Al gates are shown to agree well with the prediction of the model.

Carnes, J. E.↗
NASA NTRS1975

Charge-coupled device /CCD/ analog signal processing

Analog charge-coupled devices and sampled data filtering have developed into mature disciplines. Each discipline offers the other wide systems advantages where alone it would be impractical. This letter explores these advantages in a number of implementations against the scale of wide low-cost applications.

Benz, H. F.↗
NASA NTRS1973

Advanced investigation of two-phase charge-coupled devices

The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

Kosonocky, W. F.↗
NASA NTRS1973

Image recording using charge-coupled devices

The principle of charge coupling is reviewed and some performance limitations are discussed. The practicality of a two-dimensional charge-coupled area-imaging device is examined. Of several possible design approaches, a frame transfer approach was chosen for detailed consideration because it has a very simple resolution cell. The results obtained in utilizing the proposed approach are given along with some of the problems detected.

Sequin, C.↗
NASA NTRS1973

Two-phase charge-coupled device

A charge-transfer efficiency of 99.99% per stage was achieved in the fat-zero mode of operation of 64- and 128-stage two-phase charge-coupled shift registers at 1.0-MHz clock frequency. The experimental two-phase charge-coupled shift registers were constructed in the form of polysilicon gates overlapped by aluminum gates. The unidirectional signal flow was accomplished by using n-type substrates with 0.5 to 1.0 ohm-cm resistivity in conjunction with a channel oxide thickness of 1000 A for the polysilicon gates and 3000 A for the aluminum gates. The operation of the tested shift registers with fat zero is in good agreement with the free-charge transfer characteristics expected for the tested structures. The charge-transfer losses observed when operating the experimental shift registers without the fat zero are attributed to fast interface state trapping. The analytical part of the report contains a review backed up by an extensive appendix of the free-charge transfer characteristics of CCD's in terms of thermal diffusion, self-induced drift, and fringing field drift. Also, a model was developed for the charge-transfer losses resulting from charge trapping by fast interface states. The proposed model was verified by the operation of the experimental two-phase charge-coupled shift registers.

Kosonocky, W. F.↗
NASA NTRS1975

Effects of radiation on charge-coupled devices

The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.

Carnes, J. E.↗
NASA NTRS1975

Applications of charge-coupled device transversal filters to communication

The paper discusses the computational power of state-of-the-art charged-coupled device (CCD) transversal filters in communications applications. Some of the performance limitations of CCD transversal filters are discussed, with attention given to time delay and bandwidth, imperfect charge transfer efficiency, weighting coefficient error, noise, and linearity. The application of CCD transversal filters to matched filtering, spectral filtering, and Fourier analysis is examined. Techniques for making programmable transversal filters are briefly outlined.

Buss, D. D.↗
NASA NTRS1972

Trends in solid state electronics, part 2

Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent.

Gassaway, J. D.↗
NASA NTRS1974

Charge coupled device image sensor study

An evaluation of a charge-coupled device (CCD) image sensors for use in spacecraft-borne imaging systems was conducted. The study resulted in design recommendations for two sensors, an approximately 500 times 500 element imaging device and a 1 times 190 element linear imaging device with a 190 times 121 buffer store. Emphasis was placed on the higher resolution, area-imaging sensor. The objectives of the proposed sensors are listed, results of the experiments are analyzed, and estimates of the device performance are presented. A summary of the major technical recommendations is included.

Source record↗
NASA NTRS1975

Imaging on ballistic missions to comet Encke

Imaging for navigation and science has been studied for a 1980 Encke flyby at 0.4 to 0.8 AU from the sun with spinning and three-axis spacecraft. Trajectory errors, maneuvers, encounter geometry, imaging performance, and data transmission were considered. Onboard comet sightings are needed for navigation. Recommended for a three-axis spacecraft are two vidicon cameras and a nucleus sensor for closed-loop pointing control. The cameras are essentially the Mariner 9 and Mariner 10 instruments; the nucleus sensor is an updated version of a sensor flown on Mariners 6 and 7. For a spinning spacecraft, a framing camera using a charge-coupled device and a spin-scan photometer are proposed. The framing camera would be a new design; it would not be despun, but the spin axis should point along the comet-centered velocity vector. The photometer is essentially that flown on Pioneer 10 and 11.-

Jaffe, L. D.↗
NASA NTRS1975

Autonomous navigation preparations for future unmanned space missions

In order to prepare for the era of autonomous navigation, this paper first examines existing techniques for spacecraft navigation by describing the basic elements of the Mark-I and II navigation technologies. The remainder of the paper deals with identification of criteria which necessitate onboard navigation, and with promising solutions now under consideration. An attractive solution possibility is proposed which utilizes narrow-angle optics, a charge-coupled device area-array image sensor, a small advanced onboard flight computer, and a simplified set of software algorithms. Onboard commands would be derived and sent to the appropriate spacecraft attitude control, propulsion, and science platform pointing subsystems. The proposed autonomous navigation system does not address all mission options, but focuses primarily on precision approach trajectory control and adaptive science instrument pointing for asteroid, cometary, and outer planet satellite missions.

Kohlhase, C. E.↗
NASA NTRS1976

A microprocessor-controlled CCD star tracker

The STELLAR (Star Tracker for Economical Long Life Attitude Reference) utilizes an image sensing Charge-Coupled Device (CCD) operating under microprocessor control. This approach results in a new type of high-accuracy star tracker which can be adapted to a wide variety of different space flight applications through software changes only. The STELLAR determines two-axis star positions by computing the element and the interelement interpolated centroid positions of the star images. As many as 10 stars may be tracked simultaneously, providing significantly increased stability and accuracy. A detailed description of the STELLAR is presented along with measurements of system performance obtained from an operating breadboard model.

Salomon, P. M.↗
NASA NTRS1975

Cooled slow-scan performance of a 512 by 320 element charge-coupled imager

A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan conditions to evaluate the device's performance under a variety of long integration and slow scan readout conditions. Operation in a low blooming mode of operation enables the sensor to be exposed with portions of the image heavily overexposed, without those areas spreading into adjacent picture areas. Device design, layout, and operating mode are described, and presents experimental results, including displayed images taken under cooled slow scan operation, are reported.

Rodgers, R. L., III↗
NASA NTRS1975

A 190 by 244 charge-coupled area image sensor with interline transfer organization

A 190 x 244 element charge coupled area image sensor has been designed, fabricated and tested. This sensor employs an interline transfer organization and buried n-channel technology. It features a novel on-chip charge integrator and a distributed floating gate amplifier for high and low light level applications. The X-Y element count has been chosen to establish the capability of producing an NTSC compatible video signal. The array size is also compatible with the Super 8 lens format. The first few sample devices have been successfully operated at full video bandwidth for both high and low light levels with the charge amplifier system.

Walsh, L. R.↗