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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Formation of amino acids by cobalt-60 irradiation of hydrogen cyanide solutions

Experiments were conducted to study the pathway for the prebiotic origin of amino acids from hydrogen cyanide (HCN) under the action of ionizing radiation considered as an effective source of energy on the primitive earth. The irradiations were performed in a cobalt-60 source with a dose rate of 200,000 rad/hr. Seven naturally occurring amino acids are identified among the products formed by the hydrolysis of gamma-irradiated solutions of HCN: glycine, alanine, valine, serine, threonine, aspartic acid, and glutamic acid. The identity of these amino acids is established by gas chromatography and mass spectrometry. Control experiments provided evidence that the amino acids are not the result of contamination.

Sweeney, M. A.↗
NASA NTRS1983

A comparison of radiation damage in liner ICs from cobalt-60 gamma rays and 2.2-MeV electrons

The total ionizing dose response of fourteen IC types from eight manufacturers was measured using Co-60 gamma rays and 2.2-MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source is not a suitable simulation source for some systems because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.

Gauthier, M. K.↗
NASA NTRS1983

A comparison of radiation damage in linear ICs from Cobalt-60 gamma rays and 2.2 MeV electrons

The total ionizing dose response of fourteen IC types from eight manufacturers have been measured using Co-60 gamma rays and 2.2 MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source may not be a suitable simulation source for some systems, because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.

Gauthier, M. K.↗
NASA NTRS1988

Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar process

Experimental measurements are reported of the degradation effects of high-energy particles (heavy Br ions and electrons) and Co-60 gamma-rays on the current gain of minimum-geometry bipolar transistors made from an advanced process. The data clearly illustrate the total-ionizing-dose vs particle-fluence behavior of this bipolar transistor produced by an advanced process. In particular, bulk damage from Co-60 gamma rays in bipolar transistors (base transport factor degradation) and surface damage in bipolar transistors from ionizing radiation (emitter-efficiency degradation) have been observed. The true equivalence between various types of radiation for this process technology has been determined on the basis of damage from the log K1 intercepts.

Zoutendyk, John A.↗
DOE OSTI2026

Direct comparison of gamma, electron beam and X-ray radiation effects on the polymers of a pulsed lavage device

Gamma radiation used for sterilization of medical devices is challenged by cobalt-60 supply and commercial capacity. To maintain a robust radiation sterilization marketplace for the rapidly growing single-use medical device industry, investigation of potential alternatives to gamma technology, such as electron beam (e-beam) and X-ray technology, is critical. In this work, we directly compare the effects of radiation source and absorbed dose level on the polymeric materials and function of a commercial pulsed lavage device used for wound care. Product functionality, polymer mechanical, and polymer optical properties were evaluated using standard methods and input from the device manufacturer. Test results show that functionality of the product was not inhibited by radiation although the battery in the device exposed to X-ray exhibited greater voltage loss compared to batteries in products exposed to gamma or e-beam. Statistically significant differences between gamma and e-beam exposure and between gamma and X-ray exposure were also observed for product appearance in terms of yellowness index of several of the polymers considered. Overall, the results of this study support the viability of e-beam and X-ray radiation technologies as alternatives to cobalt-60 gamma technology for sterilization of the single-use pulsed lavage medical device investigated.

Electron beam↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 2

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Price, W. E.↗
DOE OSTI2025

Radiation Effects on the Performance of Advanced Sulfur Monochloride Chlorination Processes

Advanced sulfur chloride-based chlorination technologies are being developed to enable efficient recycling of aluminum and zirconium-based materials used in the nuclear industry. However, the impacts of ionizing radiation on the performance of these sulfur chloride compounds are not well established, despite this being critical knowledge for assessing their feasibility and longevity under envisioned process conditions. Here, in the present article, we report on the effects of cobalt-60 gamma irradiation (≤ 5 MGy) on the aluminum alloy 6061 (AA6061-T6) chlorination yield in sulfur monochloride (S 2 Cl 2 ). Our findings indicate that, compared to nonirradiated solvent, radiation-induced changes in the chemical composition of S 2 Cl 2 —identified using Raman spectroscopy—afford an additional, dose-dependent exothermic process prior to the chlorination reaction’s typical thermodynamic behavior. We attribute this new process to reactions involving aluminum species (metal, oxide, or [oxy]hydroxides) and sulfur dichloride (SCl 2 ), an S 2 Cl 2 radiolysis product that accumulates with absorbed gamma dose, but is absent following an AA6061-T6 chlorination study. Despite the exothermicity of this new process, the overall yield of chlorination decreased with increasing preirradiation dose. Consequently, the chemical reactivity, specificity (aluminum metal vs aluminum passivation and corrosion layer constituents), and byproducts of SCl 2 must be more thoroughly evaluated to support the continued development of advanced S 2 Cl 2 chlorination technologies.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2025

Radioisotope production at the advanced test reactor: process and lessons learned

The mission of the Advanced Test Reactor (ATR) at Idaho National Laboratory (INL) focuses on creating irradiation facilities for nuclear materials and fuels research. While radioisotope production is not a core part of the ATR mission, it is important for providing a U.S. domestic source of critical radioisotopes such as cobalt-60 (Co-60). Here, this paper gives an overview for radioisotopes currently being produced in ATR as well as other potential radioisotopes that can be produced in ATR. It also provides guidance on radioisotope production that can be applied to other test reactors.

ATR↗
DOE OSTI2025

Impact of corrosion layer composition and thermal pretreatment on the radiolytic generation of molecular hydrogen from aluminum alloys

To fully evaluate the feasibility of extending the dry storage of aluminum-clad spent nuclear fuel (ASNF) in helium-backfilled cannisters, the amount of radiation-induced molecular hydrogen (H 2 ) generated and the impact of absorbed radiation dose on the ASNF corrosion layer composition must be accurately assessed. Here, in this study, we report a slowing in the rate of radiolytic H 2 generation for pre-corroded AA1100 and AA6061 aluminum alloy coupons irradiated to up to 53 MGy of absorbed cobalt-60 gamma dose. By exploring a variety of thermal pretreatment conditions for AA6061 coupons, we find that the “steady-state” yield of H 2 depends more on the aluminum alloy used than on the treatments applied prior to dry storage. Scanning electron microscopy and positron annihilation lifetime spectroscopy techniques also provided evidence for gamma radiation-induced defects in the corrosion layers of the investigated aluminum alloy coupons for high absorbed doses (~50 MGy), the consequences of which on cladding integrity and H 2 generation should be explored in future works.

38 - RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCL↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗
NASA NTRS1982

Total-dose radiation effects data for semiconductor devices, volume 3

Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

Price, W. E.↗
NASA NTRS1984

Total-dose and dose-rate dependence of proton damage in MOS devices during and after irradiation

Rad-hard CMOS/bulk inverters with input gates high and low were irradiated by protons with a nominal energy of 8 MeV in an effort to determine the total-dose and dose-rate dependence of threshold voltage shifts, both during and immediately after irradiation and over extended periods of time thereafter. It is shown that the effects in rad-hard MOS devices which are produced by specific proton and electron energies in the space environment could be simulated by cobalt-60 induced effects through careful and proper selection of total does and dose rates. This selection must be based on an experimentally established relationship of Co-60 to electron or proton damage. It is demonstrated that the simulation can be accomplished both during and after irradiation, in the long-term postirradiation period, as well as in the damage state immediately after bombardment.

Stassinopoulos, E. G.↗
NASA NTRS1985

Effects of high energy radiation on the mechanical properties of epoxy-graphite fiber reinforced composites

In an effort to elucidate the changes in molecular structural and mechanical properties of epoxy/graphite fiber composites upon exposure to ionizing radiation in a simulated space environment, spectroscopic and surface properties of tetraglycidyl-4,4'-diamino diphenyl methane (TGDDM) red with diamino diphenyl sulfone (DDS) and T-300 graphite fiber were investigated following exposure to ionizing radiation. Cobalt-60 gamma radiation and 1/2 MeV electrons were used as radiation sources. The system was studied using electron spin resonance (ESR) spectroscopy, infrared absorption spectroscopy, contact angle measurements, and electron spectroscopy for chemical analysis.

Fornes, R. E.↗
NASA NTRS1986

Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

Martin, K. E.↗
NASA NTRS1986

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

Martin, K. E.↗
NASA NTRS1989

Radiation Damage In Advanced Bipolar Transistors

Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.

Zoutendyk, John A.↗
NASA NTRS1989

Radiation dependence of inverter propagation delay from timing sampler measurements

A timing sampler consisting of 14 four-stage inverter-pair chains with different load capacitances was fabricated in 1.6-micron n-well CMOS and irradiated with cobalt-60 at 10 rad(Si)/s. For this CMOS process the measured results indicate that the rising delay increases by about 2.2 ns/Mrad(Si) and the falling delay increase is very small, i.e., less than 300 ps/Mrad(Si). The amount of radiation-induced delay depends on the size of the load capacitance. The maximum value observed for this effect was 5.65 ns/pF-Mrad(Si). Using a sensitivity analysis, the sensitivity of the rising delay to radiation can be explained by a simple timing model and the radiation sensitivity of dc MOSFET parameters. This same approach could not explain the insensitivity of the falling delay to radiation. This may be due to a failure of the timing model and/or trapping effects.

Buehler, M. G.↗