The presence of deep levels in ion implanted junctions.
Deep trapping levels caused by ion implantation doping, discussing level effects on electrical characteristics of zinc implanted GaAs diodes
Hunsperger, R. G.↗
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DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells
The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.
Li, S. B.↗
Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells
The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.
Li, S. S.↗
Trap‐Engineering the Persistent Luminescence of Ca 3 Ga 4 O 9 :Tb 3+ via Al 3+ Substitution for Optical Data Storage
Abstract Optically stimulated luminescence (OSL) materials hold great potential for optical data storage (ODS) and anticounterfeiting applications. Nevertheless, the scarcity of suitable luminescent materials with deep‐level traps remains a significant obstacle. Herein, a host substation strategy have been employed to tune the persistent luminescence (PersL) and OSL properties of Ca 3 Ga 4 O 9 :Tb 3+ by Al 3+ substitution through trap engineering and demonstrated their potential. Specifically, the photoluminescence of the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ of Tb 3+ is first investigated due to its different occupancies of Ca 2+ . The influence of host substitution on the crystal structure, trap depth, trap density, PersL, and OSL properties have further investigated. A series of strong PersL and OSL peaks from the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ with bluish‐green emissions have been observed. The Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ have shown controllable photon release upon thermal and optical stimuli, enhancing their performance for ODS. Thermally stimulated luminescence suggests that vacancy and defect concentrations inside the Ca 3‐x% (Ga 1‐y% Al y% ) 4 O 9 :x%Tb 3+ can be manipulated by Tb 3+ doping and Al 3+ substitution, which ultimately leads to the formation of deep traps and a broad distribution of traps with increased deep trap concentration. The work demonstrates that trap engineering through Al 3 ⁺ substitution is an effective method for tuning PersL and OSL properties of Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ for ODS.
Abeywickrama, Thulitha M. [Department of Chemistry↗
Metal Oxide vs Organic Semiconductor Charge Extraction Layers for Halide Perovskite Indoor Photovoltaics
Halide perovskite indoor photovoltaics (PVs) are highly promising to autonomously power the billions of microelectronic sensors in the emerging and disruptive technology of the Internet of Things (IoT). However, how the wide range of different types of hole extraction layers (HELs) impacts the indoor light harvesting of perovskite solar cells is still elusive, which hinders the material selection and industrial–scale fabrication of indoor perovskite photovoltaics. In the present study, new insights are provided regarding the judicial selection of HELs at the buried interface of halide perovskite indoor photovoltaics. This study unravels the detrimental and severe light–soaking effect of metal oxide transport layer–based PV devices under the indoor lighting effect for the first time, which then necessitates the interface passivation/engineering for their reliant performance. This is not a stringent criterion under 1 sun illumination. By systematically investigating the charge carrier dynamics and sequence of measurements from dark, light–soaked, interlayer–passivated device, the bulk and interface defects are decoupled and reveal the gradual defect passivation from shallow to deep level traps. Thus, the present study puts forward a useful design strategy to overcome the deleterious effect of metal oxide HELs and employ them in halide perovskite indoor PVs.
14 SOLAR ENERGY↗
Effect of Ion Sputtering on Interface Chemistry and Electrical Properties of an Gaas (100) Schottky Contacts
Auger and electron photoelectron spectroscopy were used to measure the extent of As depletion during 1 keV to 5 keV argon sputtering of GaAs surfaces. This depletion was correlated with a general decrease in the barrier height of the rectifying Au contact deposited in situ. However, nondestructive angle resolved XPS measurements showed As was depleted at the outer surface more by 1 keV than 3 keV argon. These effects are explained based on a combined work effective work function model and creation of a donor like surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.
Wang, Y. X.↗
Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts
The effects of sputtering n-type (100)GaAs with 1 to 5 keV argon ions have been studied in ultrahigh vacuum. Auger electron and X-ray photoelectron spectroscopies have been used to characterize the surface before and after sputtering. Gold Schottky contacts were prepared in situ to avoid contamination at the metal/semiconductor interface. The data show that sputtering depletes the surface in As, and the extent of depletion increased as the ion energy was increased. However, angular-resolved photoelectron data showed As was enriched on the outer atom layer by 5 keV but depleted by 1 keV Ar(+) sputtering. Current and capacitance versus voltage data showed that sputtering always lowered the Schottky barrier height and generally increased the ideality factor. However, the barrier height after 3 keV sputtering was higher than after 1 keV sputtering. Those effects are explained based on a combined effective work function model and creation of a donorlike surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.
Wang, Y.-X.↗
Effects of impurities on silicon solar-cell performance
Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.
Hopkins, R. H.↗
Impurity effects in silicon for high efficiency solar cells
Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.
Hopkins, R. H.↗
Bistable Optical Semiconductor Switching Based on C-Doped GaN
Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.
Carbon-dopped Gallium nitride (GaN:C)↗
Photocapacitance effects at a Cu2S-CdS heterojunction.
The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.
Lindquist, P. F.↗
Local rare-earth dopant structure in a complex-oxide/semiconductor heterojunction: Molecular beam epitaxy grown Yb-doped SrTiO3 on Si(001)
We have investigated the structural and electronic properties of Yb-doped SrTiO3/Si(001) grown by molecular beam epitaxy. Other rare-earth donor dopants that result in n-type conductivity typically substitute for Sr at the A-sites in the perovskite lattice. In contrast, Yb has been found to substitute predominantly for Ti at the perovskite B-sites based on data from atomically resolved scanning transmission electron microscopy and spectroscopy, as well as extended x-ray absorption fine structure. Yb exhibits two distinct charge states as determined by x-ray absorption spectroscopy and associated modeling, +2.7 and +2.1. These aliovalent substitutional dopants are compensated by donor electrons from oxygen vacancies that form during epitaxial film growth. An atom beam flux mismatch was present during film depositions because it was assumed that Yb would occupy A-sites, leading to a flux matching formula given by Yb + Sr = Ti. However, the formation of YbTi rather than YbSr results in Sr vacancies and extraneous (i.e. non-lattice) Ti atoms in the films, or on the film surfaces. The presence of these defects, together with oxygen vacancies, leads to deep-level electron traps that were detected by resonant photoemission and much higher sheet resistance than that associated with, for instance, La-doped films.
Chambers, Scott A. (ORCID:000000025415043X)↗
DEVELOPMENT AND APPLICATION OF DEEP-LEVEL SPECTROSCOPY SYSTEMS FOR CHARACTERIZING IRRADIATION-INDUCED TRAPS IN GALLIUM NITRIDE SCHOTTKY DIODES
This thesis documents the creation of a Deep Level Optical Spectroscopy System, Irradiation performed at the IBL and results from this experiment from University of New Mexico fabricated devices.
Hodgson, Donald Edwin [Sandia National Laboratorie↗
Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors
Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.
42 ENGINEERING↗
Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect
A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.
Lagowski, J.↗
The thermal balance of the lower atmosphere of Venus
The temperature near the surface of Venus (now established at 730 K) is remarkably high in view of Venus's cloud cover which causes the planet to absorb even less sunlight than does Earth. Early attempts to understand the thermal balance that leads to this unusual state were hindered by the lack of basic information regarding the composition, temperature-pressure structure, cloud properties, and wind field of the lower atmosphere. A series of successful space missions have measured many of the above quantities that control the transfer of heat in Venus's lower atmosphere. The relevant observational data are summarized and the attempts to understand the thermal balance of Venus's atmosphere below the cloud tops are reviewed. The data indicate that sufficient sunlight penetrates to deep atmospheric levels and is trapped by the large thermal opacity of the atmosphere to essentially account for the high temperatures observed.
Tomasko, M. G.↗
The thermal balance of the lower atmosphere of Venus
The temperature near the surface of Venus (now established at 730 K) is remarkably high in view of Venus's cloud cover which causes the planet to absorb even less sunlight than does earth. Early attempts to understand the thermal balance that leads to this unusual state were hindered by the lack of basic information regarding the composition, temperature-pressure structure, cloud properties, and wind field of the lower atmosphere. A series of successful space missions have measured many of the above quantities that control the transfer of heat in Venus's lower atmosphere. The relevant observational data are summarized and the attempts to understand the thermal balance of Venus's atmosphere below the cloud tops are reviewed. The data indicate that sufficient sunlight penetrates to deep atmospheric levels and is trapped by the large thermal opacity of the atmosphere to essentially account for the high temperatures observed. Previously announced in STAR as N83-19672
Tomasko, M. G.↗
High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions
Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.
Messenger, S. R.↗