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Stress effects on electron relaxation time anisotropies in n-type Si, using high temperature piezoresistivity model for population transfer rates
Reliable test method based on special strain gauge load transducer for embedment axial stress measurement in electronic modules
Strain gage load transducer measures axial embedment stresses in resins used for encapsulation of welded electronic modules. It simulates the geometry of an actual electronic component and can be modified in size, shape, and operating temperature.
Data compiled by the Institute of Environmental Sciences were used to establish guidelines for identifying defective, abnormal, or marginal parts as well as manufacturing defects. These data are augmented with other available sources of similar information in conjunction with NASA centers' data and presented in a form that may be useful to all NASA centers in planning and developing effective environmental stress screens. Information relative to thermal and vibration screens as the most effective methods for surfacing latent failures in electronic equipment at the component level is considered.
A general discussion of the dominant terms in the stress tensor in a magnetized plasma such as the solar corona is presented. The importance of dissipative terms such as electrical resistivity, heat conduction, and interspecies collisions is assessed. For average coronal conditions, the proton stress tensor is found to reduce to the dominant terms in the classical expression for the viscous stress. The classical expression can fail in the transition region, however. In the diffusion region of reconnection, classical viscosity will be appropriate if the resistivity is very large, so that the diffusion region is broad, but in that case the viscous heating is small compared to the resistive heating. On the other hand, the more general expression for the stress tensor is required if the diffusion region is thin; the stress tensor will be important in this case. The electron stress tensor is also considered, and it is shown how the classical expression for electron viscosity can fail in the transition region and lower corona.
Synchrotron radiation rate from deexcitation of electrons in magnetic orbits of low quantum numbers, stressing electrons radiation in intense magnetic fields
Encapsulation technique minimizes embedment and thermal stresses in welded electronic modules. A coating of thinned room-temperature- vulcanizing silicone rubber having a high coefficient of expansion and flexibility at low temperature, is applied first and then an encapsulating epoxy resin having a relatively low coefficient of expansion is added.
The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.
Electron paramagnetic resonance atomic scale stress analysis of high polymer fibers and rubber, measuring chain scission and bond rupture for different loading histories
The paper presents a three-dimensional mathematical model of signal generation and contrast in brittle materials and uses the model to simulate the effect of residual stress fields on the scanning electron acoustic microscopy (SEAM)-generated electron acoustic signal. According to the model, a positive (tensile) strain produces an increase in the output signal, whereas a negative (compressive) strain produces a decrease in the ouput signal. Dark field contrast conditions occur at a chopping frequency at which V2 - V1 is greater than 0 (where V2 = V is the SEAM output in a region of residual stresses, and V1 is the output in a stress-free region of the sample). Under ideal conditions (maximum contrast) V1 approaches zero. It was found that tensile strains of the order 0.2-0.3 percent, possible in brittle materials, would produce a variation of the acoustic output signal of the order 10 nV (about 1 percent), well within the image contrast and signal processing capability of the SEAM electronics.
Spin-lattice interaction in ruby measured by electron spin resonance in uniaxially stressed crystals
The edge stabilized ribbon (ESR) silicon ribbon was grown in widths of 1, 2.2 and 4.0 inches at speeds ranging from .6 to 7 in/min, which result in ribbon thicknesses of 5 to 400 microns. One of the primary problems remaining in ESR growth is that of thermally induced mechanical stresses. This problem is manifested as ribbon with a high degree of residual stress or as ribbon with buckled ribbon. Thermal stresses result in a high dislocation density in the grown material, resulting in compromised electronic performance. Improvements in ribbon flatness were accomplished by modification of the ribbon cooling profile. Ribbon flatness and other experimental observations of ESR ribbon are discussed. Laser scanner measurements show a good correlation between diffusion length and dislocation density which indicates that the high dislocation densities are the primary cause of the poor current performance of ESR materials. Dislocation densities were reduced and improved electronic performance resulted. Laser scanner data on new and old material are presented.
Several reviews have highlighted a number of applications of scanning electron acoustic microscopy (SEAM) to metals and semiconductors which show that SEAM can provide new information on surface and near-surface features of such materials, but there have been few studies attempting to determine the capabilities of SEAM for characterizing ceramic materials. We have recently observed image contrast in SEAM from residual stress fields induced in brittle materials by Vickers indentations that is strongly dependent on the electron beam chopping frequency. We have also recently developed a three-dimensional mathematical model of signal generation and contrast in SEAM, appropriate to the brittle materials studied, that we use as a starting point in this paper for modeling the effect of residual stress fields on the generated electron acoustic signal. The influence of the electron beam chopping frequency is also considered under restrictive assumptions.
Spin-lattice Hamiltonian for trivalent positive Nd and U ions in sites of tetragonal symmetry in calcium fluoride measured with electron spin resonance
Methods are outlined which were used to test the response of replica diffraction gratings to a space environment, specifically the response of the replica gratings to thermal-vacuum and electron irradiation stress. It is concluded that there probably is some degradation to thermal stress, but that there is probably no significant degradation due to a vacuum environment. It is further concluded that the degradation of performance of replica gratings because of electron irradiation is due to the interaction of the electrons and the replica grating substrate and not to the replication material itself. Replica and original gratings on the same substrate material should thus respond to particle irradiation in the same manner. A study is presented on the variation of refraction index of a space-related material, Nd:CaF2, with wavelength, percent neodymium doping, and temperature.
Response of replica gratings to thermal vacuum stressing and electron irradiation
Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.