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DOE OSTI2025

Challenges and Gaps in the Development of Pulsed Power for Fusion Applications: A Preroadmapping Perspective From Industry, Academia, and National Laboratory Experts

Fusion energy meets the twenty-first century World Grand Challenge of sustainable, ubiquitous, and safer energy sources. However, harnessing the promise of fusion energy has proven elusive. The competing approaches to fusion power plant design include inertial confinement fusion, National Ignition Facility (ICF-NIF, Z machine, etc.,) magnetic confinement fusion (MCF-Tokamak, stellarators, etc.), and other approaches that show promise in small- (flow stabilized Z pinches) or large-scale applications. These approaches are being accelerated with private and public funding and seek to demonstrate the feasibility of different approaches to fusion-based power plants. Yet, how can the necessary pulsed power technologies for these disruptive technology bases be accelerated with no clear “Dominant Design?” Roadmapping holds the promise to identify and develop common critical pulsed power components for laboratory, prototype, and commercial fusion, and can accelerate the commercialization of fusion reactor designs. A preroadmapping Workshop on Pulsed Power for Fusion was held at the IEEE International Pulsed Power Conference in San Antonio, TX, USA, in June 2023. The workshop had 177 attendees. Here, the common elements for many of the ICF technologies vying for dominant design were identified. The advancement of these technologies through roadmapping will enhance commercial expectations that require their rapid and innovative development in the next five years, as well as the next five to ten years. The key technologies identified that underpin and limit the advancement of fusion power include pulsed power technologies such as energy storage, high-voltage switching, additive manufacturing, and modular pulsed power circuit topologies. In conclusion, they are the focus of our effort in the following roadmap scenario, which will delineate potential paths to technology development.

Curry, Randy D. [I-Pulse Group, Albuquerque, NM (U↗

DOE OSTI2025

Photoconductive Semiconductor Switches: Materials, Physics, and Applications

Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.

36 MATERIALS SCIENCE↗

NASA NTRS1976

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

Hower, P. L.↗

DOE OSTI2025

Design and Preliminary Experimental Results on a Uniform-Field Test Fixture for Power Flow Experiments

Electrodes that produce a uniform electric field across their surfaces are desired for a variety of high-voltage systems including spark-gap switches and transversely excited atmospheric lasers. Here, the implementation of uniform-field electrodes to a parallel-plate load is described for the study of vacuum power flow under pulsed-power applications. We begin with an overview of general uniform-field geometries, and provide an open-source program that generates these geometries as described by Ernst. Following that, a modification to an existing power-flow experimental platform, that adopts a uniform-field geometry, is introduced and its utility is described. Lastly, preliminary experimental results are presented and future steps are outlined.

Capacitors↗

DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗

DOE OSTI2026

Tradeoffs in single stage drift step recovery diode generator design

A high-voltage generator of nanosecond pulses utilizing a drift step recovery diode (DSRD) as an opening switch in the compression section is designed to operate at peak voltages of 4 kV and repetition rates of 2 MHz in burst mode at reduced voltages. The generator is used to perform empirical studies on the output metrics of a DSRD generator with a focus on matching the circuit of the reverse current loop parameters and DSRD to the load. The dynamic impedance introduced by nonlinear elements in the DSRD was investigated with respect to the driving circuit by varying the number of DSRDs connected in series. Experimental results indicate that optimization of the driving circuit for the DSRD is key to minimizing losses and achieving optimal pulse compression. Furthermore, the results also indicate trends in DSRD performance as larger storage inductances and longer pumping times are used, limiting the pulse compression capabilities of a single stage DSRD generator.

Electrical properties and parameters↗

DOE OSTI2025

Wireless Pulse-Width Modulation Control of Power Converters Using Ultra-Wideband Technology for Distributed High-Voltage Systems

In this study, we present a new approach for wireless pulse-width modulation (PWM) control of a power converter, applicable to numerous power converters within a complex electrical distribution system. This method eliminates the need for multiple physical connections of gating/PWM signals among distributed converter modules. By using ultra-wideband-based communication, the PWM control signals can be wirelessly transmitted from a central controller to multiple converters simultaneously and seamlessly. System stability is thoroughly analyzed, and experimental results validate the efficacy of the wireless control scheme for a buck converter operating at a 50-kHz switching frequency. The minimum latency obtained from this setup is 5.38 ..mu..s. This control concept offers easier implementation of distributed control in high-voltage power systems, especially in multilevel architectures, even under harsh conditions with ambient noise.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2025

Determining the Minimum Phase‐to‐Phase Gap Distance for Unconventional Transmission Lines Using Numerical Method

With the increasing demand for power transmission, compact, high surge impedance loading (HSIL) high-voltage transmission lines have emerged as a viable solution due to their reduced land acquisition costs and higher power delivery capability. The compactness of a transmission line depends on effective insulation coordination, particularly in determining the phase-to-phase clearance, which is governed by the critical flashover voltage under switching and lightning overvoltage conditions. Traditional methods for phase-to-phase clearance rely on empirical formulas derived from experimental data, which are convenient for conventional high-voltage lines. However, unconventional HSIL lines require a faster and more adaptable evaluation method, as they involve optimized conductor positioning to reduce right-of-way requirements while enhancing natural power loadability. This study presents a simplified numerical approach to determine the minimum phase-to-phase gap, utilizing arc propagation viability curves, and offers an efficient alternative to conventional empirical methods. The proposed method was successfully applied to a 500 kV conventional line as well as 500 and 735 kV unconventional line designs, demonstrating its capability in accurately assessing insulation requirements. Results reveal that the method can support reduced gap clearances while still maintaining reliability, thereby validating its usefulness in optimizing compact transmission line configurations.

Arafat, Easir [The University of Texas at Dallas, ↗

DOE OSTI2025

In-Field Testing of Components for Feedback and Control of the ITER Disruption Mitigation System

Here, the shattered pellet injection (SPI) method has been chosen as the disruption mitigation system (DMS) for ITER. To protect the device from plasma disruptions that cause damaging heat and electromagnetic loads, SPI is used to inject high-Z material into the plasma. The process of SPI utilizes cryogenic cooling to form solid pellets. Pellets are accelerated down a barrel and into an angled surface, causing the pellet to shatter prior to entering the tokamak chamber. For the DMS to function reliably, the 27 separate shattered pellet injectors planned for ITER must rely on many components to provide accurate feedback data and for control functions. Each component in the DMS is exposed to an elevated background magnetic field depending on its placement and proximity to the plasma chamber. A Helmholtz coil test stand that is operated at Oak Ridge National Laboratory was utilized to test the components in relevant background field levels to assess component performance. This paper details the test design and results for in-field component operation for a variety of components. This list includes the following components: two different network switches for camera connectivity, a VAT fast shutter valve intended to reduce the flow of SPI propellant gas into the torus, a solenoid control valve intended for use in the pellet formation process, pressure/vacuum switches to be used for feedback and control, a printed circuit board piezo pressure sensor to be used to measure breech pressure, and various relays for the high-voltage pulsed power supply used to drive the SPI propellant valve.

Disruption mitigation↗

DOE OSTI2025

High-Voltage Pulsed Power Generator for Beam Injection Systems

Beam injection systems in hadron colliders require kickers generating ±50 kV peak voltages into a 50 Ω impedance, with peak currents of 1000 A and sub-10 ns rise and fall times. This paper presents a novel high-voltage pulse power generator utilizing a distributed pulser architecture. It combines gallium nitride (GaN) transistors in a Marx topology with an inductive adder, achieving nanosecond-scale switching speeds and high-power efficiency. Compared to other solutions such as based on MOSFETs or fast ionization dynistors, our development offers superior peak and average power performance, reduced system complexity, and enhanced reliability, marking a significant step forward in high-voltage pulse generation for accelerator applications.

Smirnov, Alexander (ORCID:0000000280631691)↗

DOE OSTI2025

In-situ polymerized and crosslinked electrolytes with interchangeable Li/Na transport for battery applications

The next generation of batteries requires electrolytes with high conductivity, mechanical stability, good adhesion with electrodes, wide electrochemical windows, and scalability. The present study introduces a concept of doped quasi single-ion conducting copolymers based on methacrylate-(trifluoromethanesulfonyl)imide (TFSI) and vinyl ethylene carbonate which at room temperature are mechanically robust and display ionic conductivities of ~0.1 mS/cm. These electrolytes can be polymerized/crosslinked in-situ, making them easily implementable in current battery manufacturing technologies. They also allow for switching between Li + and Na + transport using simple chemistry procedures. To demonstrate their potential for battery applications, the newly developed Li conductors have been tested in symmetric cells, exhibiting overall impedance below 350 Ohm and plating/stripping stability up to 1 mA/cm 2 . Moreover, lithium metal batteries incorporating this electrolyte and high-voltage Lithium Nickel Manganese Cobalt Oxide (NMC) cathodes show good capacity retention (~79%) during charging and discharging for 80 cycles at C/10 rate and a Coulombic efficiency close to 100% in the entire measurement range. The compositional, mechanical and electrochemical versatility of these electrolytes opens new venues for the design of polymer-based batteries capable of fast charging and extended cycle life, aligning with the current global green energy storage strategies.

Polymer electrolytes↗

DOE OSTI2026

A Unified Wireless Charger, On-Board Charger, and Auxiliary Power Module for Electric Vehicle Charging Systems

This paper proposes a unified electric vehicle (EV) charging architecture that integrates wireless power transfer (WPT), an on-board charger (OBC), and an auxiliary power module (APM) within a single architecture. By sharing a multi-functional magnetic structure and active switch bridges, the proposed topology eliminates additional transformers and converter stages, reducing hardware complexity and improving power density. A multipurpose magnetic design achieves magnetic decoupling among the WPT, OBC, and APM functions while maintaining the required coupling for each mode. Through electrical reconfiguration, the WPT operates as an LCC-S converter, whereas the OBC and APM operate as dual-active-bridge (DAB) converters. The system supports multiple operating modes, including simultaneous high-voltage and lowvoltage battery charging. Finite-element and circuit simulations verify the magnetic characteristics and system operation, demonstrating the feasibility of the proposed unified architecture for EV charging applications.

Jo, Cheolhui [ORNL] (ORCID:0000000322692434)↗

DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗

DOE OSTI2024

Foreword: Special Section on Multiphysics Aspects of Power Electronics Packaging—Power Die, Power Module, and Converter Level: Part 2

Power electronics are increasingly being used to condition electricity for a wide array of applications, such as transportation (on land, air, and water), data centers, radio frequency, directed energy, wind, solar, and grid-tied applications. Here, to increase power density, performance, efficiency, and reliability-as well as to reduce cost-innovations and developments are needed in the multiphysics packaging of power electronics at a die, module, and converter level. This includes fundamental R&D related to emerging high-voltage, high-temperature, and high-switching-frequency power electronics, packaging materials, thermal materials and interfaces, fluid-based thermal management technologies, reliability, condition monitoring, and prognostics. Latest developments in this area are published as a Special Section on Multiphysics Aspects of Power Electronics Packaging. The first part was published in the May 2024 issue of the IEEE Transactions on Components, Packaging and Manufacturing Technology (Volume 14, Issue 5). The second part of that Special Section is being published in this issue. A brief summary of the papers included in the second part are given below.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2025

A High-Voltage High-Current Benchtop Test Stand for Solid-State Switch Testing at the SNS

Solid-state switches already replaced thyratrons in the SNS extraction kicker power supplies, offering improved efficiency and reliability. However, recent supply chain disruptions, combined with a self-firing issue, led us to explore alternative solutions. A vendor-developed MOS-Gated Thyristor switch was introduced but ultimately failed during testing. To investigate the failure and assess possible improvements, a benchtop test stand was constructed to evaluate the performance of a single stage board. This test stand features a Pulse Forming Network (PFN) that operates at 6 kV and 6 kA, with a repetition rate exceeding 60 Hz, simulating real operational conditions. By utilizing this setup, we seek to gain a better understanding of the failure mechanisms, refine the switch designs, and ultimately develop a more reliable alternative for the extraction kicker power supplies.

Bullman, Austin [ORNL]↗

DOE OSTI2024

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗

NASA NTRS1976

Solid state remote power controllers for 120 VDC power systems

Remote Power controllers (RPCs) are devices that combine in one unit the capability to perform all the needed functions of load switching and provide total system protection of equipment and wires. The unique developments of solid-state RPCs for 120 Vdc power distribution systems are reviewed. The discussion covers design guidelines, power switch design concepts, and performance effectiveness. An NPN transistor is used as the the basic switch element. Since the ultimate goal of the 120 Vdc RPC program is to demonstrate technology readiness, the final phase is directed to the design, fabrication, and testing of multi-chip hybrid prototypes in hermetically sealed packages. RPCs have potential application in spacecraft and aircraft electrical systems, in transportation systems, and various industrial applications. The upper voltage limitation on the RPC design is related to the capability and availability of suitable high-voltage power transistors. The merits of solid-state RPCs are noted.

Sundberg, G. R.↗