Intrinsic defects in CdS Technical report no. 9
Changes in intrinsic defect structure in undoped single crystal platelets of cadmium sulfide by means of photoconductivity spectral response and conductivity glow curves
GLOW DISCHARGE↗
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Production and annealing of intrinsic defects in X-ray irradiated CdS single crystals
Production and annealing of intrinsic defects in X-ray irradiated CdS single crystals
ANNEALING↗
Production and annealing of intrinsic defects in X-Ray irradiated CdS single crystals
Production and annealing of intrinsic defects in X-ray irradiated cadmium sulfide single crystals
X-RAY IRRADIATION↗
Production and annealing of intrinsic defects in X-ray irradiated cadmium sulfide
Photoconductivity of X-ray irradiated cadmium sulfide single crystal and annealing of intrinsic defects
ANNEALING↗
Interaction between boron and intrinsic defects in GaAs
A model has been developed to describe the interaction between boron and antisite defects in bulk grown undoped liquid uncapsulated Czochralski GaAs. This model helps explain the observed experimental behavior. The model indicates that the residual double acceptor can most likely be associated with either Ga(As) or B(As).
Elliott, K. R.↗
Structural Characterization of Solar Silicon
Compared to single crystal silicon, solar silicon generally contains large residual stresses and numerous structural defects. During subsequent processing, the defect structure can undergo further changes since, at the high temperatures required for diffusion, dislocations are sufficiently mobile to rearrange themselves in patterns which reduce long range residual stresses. This process, which is similar to the polygonization of strained metals, has no counterpart in single crystal silicon. Many of the solar silicon materials are grown from graphite dies and crucibles and therefore contain carbon concentrations in excess of 1E18. The interactions between carbon, crystal defects, intrinsic point defects, oxygen and diffusing dopants are discussed.
Ast, D. G.↗
Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material: A speculative approach
Some background information on intrinsic point defects is provided and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. The co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials are discussed. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. The self-interstitial content of these agglomerates is assumed to determine their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. Oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO, precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO2-Si interface of the precipates gives rise to a continuum of donor stables and that these interface states are responsible for at least part of the light inhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.
Goesele, U.↗
High purith low defect FZ silicon
The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.
Kimura, H.↗
Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation
An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.
Miyoshi, Kazuhisa↗
Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation
An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.
Miyoshi, Kazuhisa↗
A Reliability Model for Ni-BaTiO3-Based (BME) Ceramic Capacitors
The evaluation of multilayer ceramic capacitors (MLCCs) with base-metal electrodes (BMEs) for potential NASA space project applications requires an in-depth understanding of their reliability. The reliability of an MLCC is defined as the ability of the dielectric material to retain its insulating properties under stated environmental and operational conditions for a specified period of time t. In this presentation, a general mathematic expression of a reliability model for a BME MLCC is developed and discussed. The reliability model consists of three parts: (1) a statistical distribution that describes the individual variation of properties in a test group of samples (Weibull, log normal, normal, etc.), (2) an acceleration function that describes how a capacitors reliability responds to external stresses such as applied voltage and temperature (All units in the test group should follow the same acceleration function if they share the same failure mode, independent of individual units), and (3) the effect and contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size r, and capacitor chip size S. In general, a two-parameter Weibull statistical distribution model is used in the description of a BME capacitors reliability as a function of time. The acceleration function that relates a capacitors reliability to external stresses is dependent on the failure mode. Two failure modes have been identified in BME MLCCs: catastrophic and slow degradation. A catastrophic failure is characterized by a time-accelerating increase in leakage current that is mainly due to existing processing defects (voids, cracks, delamination, etc.), or the extrinsic defects. A slow degradation failure is characterized by a near-linear increase in leakage current against the stress time; this is caused by the electromigration of oxygen vacancies (intrinsic defects). The two identified failure modes follow different acceleration functions. Catastrophic failures follow the traditional power-law relationship to the applied voltage. Slow degradation failures fit well to an exponential law relationship to the applied electrical field. Finally, the impact of capacitor structure on the reliability of BME capacitors is discussed with respect to the number of dielectric layers in an MLCC unit, the number of BaTiO3 grains per dielectric layer, and the chip size of the capacitor device.
reliability↗
Influence of local fiber undulations on the global buckling behavior of filament-wound cylinders
The predicted compressive stiffness and buckling strength of filament-wound cylinders using classical lamination theory is significantly higher than those observed experimentally. This discrepancy is partially influenced by the variation of mechanical properties in the region of fiber undulations. These regions are localized geometric defects intrinsic to the filament-winding, weaving, and braiding processes. In the present work, the average mechanical properties of the fiber undulation region are quantified using modified models of woven-fabric composites to account for the 3-dimensional effects. The mechanical properties thus determined can be incorporated as local element properties into global finite-element models. Preliminary results from large-displacement analyses of filament-wound cylinders are relatively more accurate when fiber undulations are accounted for.
Jensen, D. W.↗
Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence
ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.
Wang, Ling Jun↗
Enhanced vasomotion of cerebral arterioles in spontaneously hypertensive rats
Intrinsic rhythmic changes in the diameter of pial cerebral arterioles (30-70 microns) in anesthetized normotensive and hypertensive rats were assessed in vivo to determine if any significant differences exist between the two strains. All diameter measurements were analyzed using a traditional graphic analysis technique and a new frequency spectrum analysis technique known as the Prony Spectral Line Estimator. Graphic analysis of the data revealed that spontaneously hypertensive rats (SHR) possess a significantly greater fundamental frequency (5.57 +/- 0.28 cycles/min) of vasomotion compared to the control Wistar-Kyoto normotensive rats (WKY) (1.95 +/- 0.37 cycles/min). Furthermore, the SHR cerebral arterioles exhibited a significantly greater amplitude of vasomotion (10.07 +/- 0.70 microns) when compared to the WKY cerebral arterioles of the same diameter (8.10 +/- 0.70 microns). Diameter measurements processed with the Prony technique revealed that the fundamental frequency of vasomotion in SHR cerebral arterioles (6.14 +/- 0.39 cycles/min) was also significantly greater than that of the WKY cerebral arterioles (2.99 +/- 0.42 cycles/min). The mean amplitudes of vasomotion in the SHR and WKY strains obtained by the Prony analysis were found not to be statistically significant in contrast to the graphic analysis of the vasomotion amplitude of the arterioles. In addition, the Prony system was able to consistently uncover a very low frequency of vasomotion in both strains of rats that was typically less than 1 cycle/min and was not significantly different between the two strains. The amplitude of this slow frequency was also not significantly different between the two strains. The amplitude of the slow frequency of vasomotion (less than 1 cycle/min) was not different from the amplitude of the higher frequency (2-6 cycles/min) vasomotion by Prony or graphic analysis. These data suggest that a fundamental intrinsic defect exists in the spontaneously hypertensive rat that may contribute to the pathogenesis of hypertension in these animals.
NASA Discipline Cardiopulmonary↗
Distribution of Inclusion-Initiated Fatigue Cracking in Powder Metallurgy Udimet 720 Characterized
In the absence of extrinsic surface damage, the fatigue life of metals is often dictated by the distribution of intrinsic defects. In powder metallurgy (PM) alloys, relatively large defects occur rarely enough that a typical characterization with a limited number of small volume fatigue test specimens will not adequately sample inclusion-initiated damage. Counterintuitively, inclusion-initiated failure has a greater impact on the distribution in PM alloy fatigue lives because they tend to have fewer defects than their cast and wrought counterparts. Although the relative paucity of defects in PM alloys leads to higher mean fatigue lives, the distribution in observed lives tends to be broader. In order to study this important failure initiation mechanism without expending an inordinate number of specimens, a study was undertaken at the NASA Glenn Research Center where known populations of artificial inclusions (seeds) were introduced to production powder. Fatigue specimens were machined from forgings produced from the seeded powder. Considerable effort has been expended in characterizing the crack growth rate from inclusion-initiated cracks in seeded PM alloys. A rotating and translating positioning system, with associated software, was devised to map the surface inclusions in low-cycle fatigue (LCF) test bars and to monitor the crack growth from these inclusions. The preceding graph illustrates the measured extension in fatigue cracks from inclusions on a seeded LCF test bar subjected to cyclic loading at a strain range of 0.8 percent and a strain ratio (max/min) of zero. Notice that the observed inclusions fall into three categories: some do not propagate at all (arrest), some propagate with a decreasing crack growth rate, and a few propagate at increasing rates that can be modeled by fracture mechanics. The following graph shows the measured inclusion-initiated crack growth rates from 10 interrupted LCF tests plotted against stress intensities calculated for semi-elliptical cracks with the observed surface lengths. The expected scatter in the crack growth rates for stress intensity ranges near threshold is observed. These data will be used to help determine the distribution in growth rates of cracks emanating from inclusions as well as the proportion of cracks that arrest under various loading conditions.
Bonacuse, Peter J.↗
Vapor Growth of Indium Monoiodide
Indium (I) iodide, InI, is part of a group of heavy metal iodides that can be used as room temperature radiation detectors. Other examples are HgI2, PbI2, BiI3, or TlPbI3. InI has several advantages, such as low toxicity, no solid phase transition (such as in HgI2), and no tendency to form polytypes (PbI2, BiI3 ). All binary iodides have layered structures and are quite soft, but InI is also the mechanically most stable compound of the binary compounds. Table 1 shows the main properties of InI in comparison with the other iodides and the most common room temperature radiation detector material, (Cd, Zn)Te. InI is typically grown by the unseeded Bridgman method using a nucleation tip, but Czochralski (CZ) growth has also been demonstrated. The resulting crystals have been used successfully for radiation detection, but both resistivity and mobility are usually well below theoretically predicted values. Physical vapor transport (PVT), although much slower than melt growth, is an alternative method and has been used to grow e.g. HgI2, PbI2, BiI3, CdTe. PVT growth should eliminate or reduce inclusions and impurities since it is based on sublimation, reduce intrinsic defects due to the lower growth temperature, and reduce dislocation densities due to reduced thermal and mechanical stress. As an example, PVT-grown CdTe showed a much improved structural quality compared to Bridgman- or THM-grown material.
Cröll, Arne↗
Design of rotors for improved structural life
Major rotor design criteria are discussed with particular emphasis on those aspects of rotor design that ensure long life component integrity. Dynamic considerations, that necessitate tuning of bladed disk and seal assemblies to avoid excessive vibratory stress at both design and off-design conditions are reviewed as well as low cycle fatigue considerations, which have resulted in detailed analysis procedures to establish part temperature and stress variation throughout an operating cycle and extensive specimen and component fatigue testing to establish safe cyclic operating limits. The frequency, size, and behavior of intrinsic material defects were investigated. Manufacturing process improvements, including the application of increasingly sophisticated inspection techniques and quality control procedures are reviewed in light of their impact on component durability.
Hill, J. T.↗
Long-duration Operation of 2-micron Coherent Doppler Lidar in Space
The reliability and lifetime of laser remote sensing systems that can operate autonomously over a sufficiently long period are mainly constrained by the laser diode arrays (LDAs) used for pumping their laser transmitters. The lifetime of a 2-micron coherent lidar operating in space is particularly of concern in lieu of required pump pulse duration of Thulium and Holmium solid state lasers (approx. 1msec) that are considerably longer than those of more widely used 1-micron lasers (< 0.2 msec). A factor of 5 to 10 times longer pulse duration can easily translate to over an order of magnitude shorter lifetime for a typical commercially available high-power 2-D array. Therefore, it is imperative to address the lifetime and reliability of LDAs for pumping 2-micron lasers by exploring all the potential options that significantly prolong their life meeting the required operational lifetime of space-based coherent Doppler lidars. The leading causes of sudden failure and premature degradation of LDAs are intrinsic semiconductor defects, optical facet breakdown resulting from excessive localized heating, and thermo-mechanical stresses due to the extreme thermal cycling of the laser active regions1-2. Long pulse operation grossly amplifies the impact of these failure/degradation causes, particularly the thermo-mechanical stresses due to pulse-to-pulse thermal cycling. Therefore, several experimental setups have been developed to investigate each of the failure mechanisms and causes of premature degradation in order to evaluate various package designs, define the best operating parameters, and to guide the technology advancement, leading to highly reliable and very long lifetime LDAs5. Several areas of improvement in the packaging and fabrication process of laser diodes have already been identified and efforts towards implementing these improvements are well underway. These efforts include the use of advanced high thermal conductivity materials for packaging of laser diode arrays and new fabrication techniques for mechanically attaching laser diode bars and submounts. But even using the existing LDAs, it may be possible to increase the lifetime by careful selection of the package type, number of bars per package and their pitch, operational temperature, and operating parameters such repetition rate, pulsewidth, and applied current. Obviously, the LDA specification and operational parameters will involve a system level trade analysis to ensure that the lidar instrument meets its performance objectives. One goal of this work is to enable such trade analysis by evaluating LDAs from different suppliers in different package types and quantifying their performance as a function of their operational parameters.
Amzajerdian, Farzin↗