SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
A convenient, three-step fabrication process, with a p-type layer of gallium arsenide vapor deposited on a starting wafer of germanium, is used to produce heterojunction-homojunction p-n-p transistors. These are of high quality with good injection efficiency and low capacitance.
The development of a new ultrasonic measurement technique to quantitatively assess wire crimp terminations is discussed. The amplitude change of a compressional ultrasonic wave propagating through the junction of a crimp termination and wire is shown to correlate with the results of a destructive pull test, which is a standard for assessing crimp wire junction quality. Various crimp junction pathologies such as undercrimping, missing wire strands, incomplete wire insertion, partial insulation removal, and incorrect wire gauge are ultrasonically tested, and their results are correlated with pull tests. Results show that the nondestructive ultrasonic measurement technique consistently (as evidenced with destructive testing) predicts good crimps when ultrasonic transmission is above a certain threshold amplitude level. A physics-based model, solved by finite element analysis, describes the compressional ultrasonic wave propagation through the junction during the crimping process. This model is in agreement within 6% of the ultrasonic measurements. A prototype instrument for applying this technique while wire crimps are installed is also presented. The instrument is based on a two-jaw type crimp tool suitable for butt-splice type connections. Finally, an approach for application to multipin indenter type crimps will be discussed.
The development of a new ultrasonic measurement technique to quantitatively assess wire crimp connections is discussed. The amplitude change of a compressional ultrasonic wave propagating through the junction of a crimp connector and wire is shown to correlate with the results of a destructive pull test, which previously has been used to assess crimp wire junction quality. Various crimp junction pathologies (missing wire strands, incorrect wire gauge, incomplete wire insertion in connector) are ultrasonically tested, and their results are correlated with pull tests. Results show that the ultrasonic measurement technique consistently (as evidenced with pull-testing data) predicts good crimps when ultrasonic transmission is above a certain threshold amplitude level. A physics-based model, solved by finite element analysis, describes the compressional ultrasonic wave propagation through the junction during the crimping process. This model is in agreement within 6% of the ultrasonic measurements. A prototype instrument for applying the technique while wire crimps are installed is also presented.
The development of a new ultrasonic measurement technique to assess quantitatively wire crimp terminations is discussed. The amplitude change of a compressional ultrasonic wave propagating at right angles to the wire axis and through the junction of a crimp termination is shown to correlate with the results of a destructive pull test, which is a standard for assessing crimp wire junction quality. To demonstrate the technique, the case of incomplete compression of crimped connections is ultrasonically tested, and the results are correlated with pull tests. Results show that the nondestructive ultrasonic measurement technique consistently predicts good crimps when the ultrasonic transmission is above a certain threshold amplitude level. A quantitative measure of the quality of the crimped connection based on the ultrasonic energy transmitted is shown to respond accurately to crimp quality. A wave propagation model, solved by finite element analysis, describes the compressional ultrasonic wave propagation through the junction during the crimping process. This model is in agreement within 6% of the ultrasonic measurements. A prototype instrument for applying this technique while wire crimps are installed is also presented. The instrument is based on a two-jaw type crimp tool suitable for butt-splice type connections. A comparison of the results of two different instruments is presented and shows reproducibility between instruments within a 95% confidence bound.
Previous work has shown that ultrasonic inspection provides a means of assessing electrical crimp quality that ensures the electrical and mechanical integrity of an initial crimp before the installation process is completed. The amplitude change of a compressional ultrasonic wave propagating at right angles to the wire axis and through the junction of a crimp termination was shown to correlate with the results of destructive pull tests, which is a standard for assessing crimp wire junction quality. Of additional concern are crimps made at high speed assembly lines for wiring harnesses, which are used for critical applications, such as in aircraft. During high-speed assembly it is possible that many faulty crimps go undetected until long after assembly, and fail in service. The position and speed of the crimping jaw become factors as the high-speed crimp is formed. The work presented in this paper is designed to cover the more difficult and more subtle area of high-speed crimps by taking into account the rate change of the measurements. Building on the previous work, we present an analysis methodology, based on transmitted ultrasonic energy and timing of the first received pulse that is shown to correlate to the gauge of the crimp/ferrule combination and the position of the crimping jaw. Results demonstrating the detectability of a number of the crimp failure pathologies, such as missing strands, partially inserted wires and incomplete crimp compression, are presented. The ability of this technique to estimate crimp height, a mechanical measure of crimp quality, is discussed.
The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.
Report describes effects of power and temperature overstress on National Semiconductor and Raytheon transistors. Good junction quality was maintained. Gain losses predominated. Other failures are reported.
The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.
We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.
High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.
Recent results on a 565-690 GHz SIS heterodyne receiver employing a 0.36 micron(sup 2) Nb/AlOx/Nb SIS tunnel junction with high quality circular non-contacting back short and E-plane tuners in a full height wave guide mount are reported. No resonant tuning structures were incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, approximately 680 GHz. Typical receiver noise temperatures from 565-690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15 percent, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF pass band and was successfully installed at the Caltech Submillimeter Observatory in Hawaii.
Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.
The application of excimer laser in the fabrication of photovoltaic devices was investigated extensively. Processes included junction formation, laser assisted chemical vapor deposition metallization, and laser assisted chemical vapor deposition surface passivation. Results demonstrated that implementation of junction formation by laser annealing in production is feasible because of excellent control in junction depth and quality. Both metallization and surface passivation, however, were found impractical to be considered for manufacturing at this stage.
The Alaska SAR Facility has been receiving and processing SAR data from the J-ERS-1 satellite since Spring 1992. Corner reflectors have been set up for J-ERS-1 SAR calibration at a site near Delta Junction, in central Alaska. Image quality and calibration analysis results from the Delta Junction site and others will be presented in this paper. The impact of the 3-bit Analog-to-Digital Converter and the automatic stepping of the gain as a function of range in the J-ERS-1 radar receiver on calibration performance has been assessed. Preliminary observations on J-ERS-1 SAR data are that the average Signal-to-Noise ratio is generally fairly low, in the range 5-6dB. Azimuth ambiguity levels are higher than preflight analysis indicated. Over land, the dynamic range in the backscatter at L-band for approximately 36 degree incidence angle is often fairly high.
The Alaska SAR Facility has been receiving and processing SAR data from the J-ERS-1 satellite since Spring 1992. Corner reflectors have been set up for J-ERS-1 SAR calibration at a site near Delta Junction, in central Alaska. Image quality and calibration analysis results from the Delta Junction site and others will be presented in this paper. The impact of the 3-bit Analog-to-Digital Converter and the automatic stepping of the gain as a function of range in the J-ERS-1 radar receiver on calibration performance has been assessed. Preliminary observations on J-ERS-1 SAR data are that the average Signal-to-Noise ratio is generally fairly low, in the range 5-6 dB. Azimuth ambiguity levels are higher than preflight analysis indicated. Over land, the dynamic range in the backscatter at L-band for approximately 36 degree incidence angle is often fairly high...
A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.
Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quality infrared detector and junction device materials. However, crystal imperfections and interface shapes still must be controlled through modification of the temperature and concentration gradients created during solidification. The objective of this investigation was to study the temperature fields generated by various cell and heatpipe configurations and operating conditions. Continuum's numerical model of the temperature, species concentrations, and velocity fields was used to describe the thermal characteristics of Bridgman cell operation.
The IUE archives provide an unprecedented sample of uniform, high-quality ultraviolet stellar spectra. In particular, they contain high-resolution SWP data for nearly 200 different O stars. We have undertaken a survey of the 1200-1900 A region in about 120 of them having homogeneous optical spectral classifications to investigate systematically the behavior of the ultraviolet features, incuding the prominent stellar wind profiles and the degree to which they correlate with the optical types. The standard extracted spectrograms have been rebinned to a constant wavelength resolution of 0.25A and uniformly normalized (not dereddened) at the GSFC RDAF. They are then plotted at 10A/cm, with reseau, photometric quality and echelle order junction flags available. This atlas contains such plots for about 100 stars, arranged in spectral-type, luminosity and peculiar object sequences. The results show a high degree of correlation between the ultraviolet features, both photospheric and stellar-wind, and the optical classifications for the majority of the O-type stars.