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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.
Electrophysical instabilities of metal oxide semiconductors determined by capacitance-voltage curve analysis
Phenomenological study of radiation damage and recovery of metal oxide semiconductor field effect transistors
Phenomenological study of radiation damage and recoverability of metal oxide field effect transistors
Reliability of metal oxide silicon integrated microcircuits
Device with step function variation of the capacitance is useful for voltage-controlled oscillator circuits and as a voltage-sensitive switch. Simplicity of construction makes the device suitable for large-scale integration, microelectronic circuits.
A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.
Image orthicon camera tube for detecting faint stars, with photocathode and metal-oxide storage target for c image integration
Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits. It provides better system isolation than a transformer, while size and weight are appreciably reduced.
Procedures for cleaning, decontamination, and encapulation of electronic circuits containing metal-oxide silicon field effect transistors
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silicon transistors
Spontaneous ignition temperature, ignition temperature, and transition temperature for metal-oxidizing gas system models of solid propellant rocket engine combustion processes
Modifications to the Pioneer 10/11 meteoroid detection experiment to allow it to be used for outer planet missions were investigated. Both pressurized cells and metal-oxide silicon (MOS) penetration detectors are considered. Both the sensors systems and the electronics are treated. Investigation of the calibration and characterization of the MOS penetration detector is reported.
Control scheme is general and performs for multiplexed and dedicated channels as well as for data-bus interfaces. Control comprises two 64-pin, dual in-line packages, each of which holds custom large-scale integrated array built with silicon-on-sapphire complementary metal-oxide semiconductor technology.
System is used for design, layout, and modification of large-scale-integrated (LSI) metal-oxide semiconductor (MOS) arrays. System is structured around small computer which provides real-time support for graphics storage display unit with keyboard, slave display unit, hard copy unit, and graphics tablet for designer/computer interface.
Computer uses custom-designed complementary metal-oxide semiconductor/silicon-on-sapphire LSI arrays with critical computer paths packages on thick-film hybrids.
Automatic Monitoring System for time-dependent dielectric breakdown tests ninety-nine metal-oxide semiconductor capacitors simultaneously. Each breakdown generates voltage spike registered on readouts and indicated by LED. Latching circuit prevents recording of possible subsequent breakdowns in same capacitor. In addition to research use, system could also be adapted for quality control.
Review is detailed compilation of safe handling practices for Metal-Oxide Semiconductor (MOS) circuit elements and other devices that are susceptible to damage by electrostatic discharge. Article lists safety procedures for all aspects of handling and use of these components. Included are guidelines for setting up static-free work station and list of materials and equipment needed to maintain antistatic protection. Appendix gives vendors of these items.