Microelectronic Structure and Doping Nonuniformity of Phosphorus-Doped CdSeTe Solar Cells
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14 SOLAR ENERGY↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Test chips for custom ICs - Six kinds of test structures
Microelectronic test chips contain a number of test structures that are used for a variety of purposes in fabricating integrated circuits. For convenience, their use is divided into six groups: layout-rule evaluating, process-parameter extraction, device-parameter extraction, circuit-parameter extraction, initial-fabrication failure analysis, and reliability failure analysis. A given test structure can be used to gather information in a number of these groups. Examples are given here of the kinds of parameters that can be obtained in each of these groups. A table is included summarizing various device failures common to bulk CMOS and indicating failure mechanisms appearing after wafer fabrication and after stress.
Buehler, M. G.↗
The Materials Chemistry of Atomic Oxygen with Applications to Anisotropic Etching of Submicron Structures in Microelectronics and the Surface Chemistry Engineering of Porous Solids
Neutral atomic oxygen is the most abundant component of the ionospheric plasma in the low Earth orbit environment (LEO; 200 to 700 kilometers altitude) and can produce significant degradation of some spacecraft materials. In order to produce a more complete understanding of the materials chemistry of atomic oxygen, the chemistry and physics of O-atom interactions with materials were determined in three radically different environments: (1) The Space Shuttle cargo bay in low Earth orbit (the EOIM-3 space flight experiment), (2) a high-velocity neutral atom beam system (HVAB) at Los Alamos National Laboratory (LANL), and (3) a microwave-plasma flowing-discharge system at JSC. The Space Shuttle and the high velocity atom beam systems produce atom-surface collision energies ranging from 0.1 to 7 eV (hyperthermal atoms) under high-vacuum conditions, while the flowing discharge system produces a 0.065 eV surface collision energy at a total pressure of 2 Torr. Data obtained in the three different O-atom environments referred to above show that the rate of O-atom reaction with polymeric materials is strongly dependent on atom kinetic energy, obeying a reactive scattering law which suggests that atom kinetic energy is directly available for overcoming activation barriers in the reaction. General relationships between polymer reactivity with O atoms and polymer composition and molecular structure have been determined. In addition, vacuum ultraviolet photochemical effects have been shown to dominate the reaction of O atoms with fluorocarbon polymers. Finally, studies of the materials chemistry of O atoms have produced results which may be of interest to technologists outside the aerospace industry. Atomic oxygen 'spin-off' or 'dual use' technologies in the areas of anisotropic etching in microelectronic materials and device processing, as well as surface chemistry engineering of porous solid materials are described.
Koontz, Steve L.↗
Using FLUKA to Calculate Spacecraft: Single Event Environments: A Practical Approach
The FLUKA nuclear transport and reaction code can be developed into a practical tool for calculation of spacecraft and planetary surface asset SEE and TID environments. Nuclear reactions and secondary particle shower effects can be estimated with acceptable accuracy both in-flight and in test. More detailed electronic device and/or spacecraft geometries than are reported here are possible using standard FLUKA geometry utilities. Spacecraft structure and shielding mass. Effects of high Z elements in microelectronic structure as reported previously. Median shielding mass in a generic slab or concentric sphere target geometry are at least approximately applicable to more complex spacecraft shapes. Need the spacecraft shielding mass distribution function applicable to the microelectronic system of interest. SEE environment effects can be calculated for a wide range of spacecraft and microelectronic materials with complete nuclear physics. Evaluate benefits of low Z shielding mass can be evaluated relative to aluminum. Evaluate effects of high Z elements as constituents of microelectronic devices. The principal limitation on the accuracy of the FLUKA based method reported here are found in the limited accuracy and incomplete character of affordable heavy ion test data. To support accurate rate estimates with any calculation method, the aspect ratio of the sensitive volume(s) and the dependence must be better characterized.
Koontz, Steve↗
Epitaxial nanotwinned metals and alloys: synthesis-twin structure–property relations
Extensive studies have been performed to understand the structure–property relationship in nanotwinned (NT) metals, where the average twin thickness or twin spacing is less than 100 nm. NT metals may have high strength, ductility, good electrical conductivity and corrosion resistance and have promising applications in microelectronics, structural materials and coatings for gas and oil industry. Most prior studies focus on the computational and experimental investigations of NT metals with low stacking fault energy (SFE) and often in polycrystalline forms. In this highlight, we review recent findings on epitaxial growth of NT metals and alloys with low and high SFEs deposited on single crystal substrates, and focus primarily on advancing our comprehension towards tailoring the microstructures and properties of NT metals via extrinsic factors, including the synthesis technique, parametric control and growth template, and intrinsic factors, such as SFE and thermodynamic, kinetic alloying effects. The review intends to illuminate how to synthesize and design epitaxial NT structures to achieve desirable properties.
36 MATERIALS SCIENCE↗
The New Millenium Program: Serving Earth and Space Sciences
NASA has exciting plans for space science and Earth observations during the next decade. A broad range of advanced spacecraft and measurement technologies will be needed to support these plans within the existing budget and schedule constraints. Many of these technology needs are common to both NASA's Office of Earth Science (OES) and Office of Space Sciences (OSS). Even though some breakthrough technologies have been identified to address these needs, project managers have traditionally been reluctant to incorporate them into flight programs because their inherent development risk. To accelerate the infusion of new technologies into its OES and OSS missions, NASA established the New Millennium Program (NMP). This program analyzes the capability needs of these enterprises, identifies candidate technologies to address these needs, incorporates advanced technology suites into validation flights, validates them in the relevant space environment, and then proactively infuses the validated technologies into future missions to enhance their capabilities while reducing their life cycle cost. The NMP employs a cross-enterprise Science Working Group, the NASA Enterprise science and technology roadmaps to define the capabilities needed by future Earth and Space science missions. Additional input from the science community is gathered through open workshops and peer-reviewed NASA Research Announcement (NRAs) for advanced measurement concepts. Technology development inputs from the technology organizations within NASA, other government agencies, federally funded research and development centers (FFRDC's), U.S. industry, and academia are sought to identify breakthrough technologies that might address these needs. This approach significantly extends NASA's technology infrastructure. To complement other flight test programs that develop or validate of individual components, the NMP places its highest priority on system-level validations of technology suites in the relevant space environment. This approach is not needed for all technologies, but it is usually essential to validate advanced system architectures or new measurement concepts. The NMP has recently revised its processes for defining candidate validation flights, and selecting technologies for these flights. The NMP now employs integrated project formulation teams, 'Which include scientists, technologists, and mission planners, to incorporate technology suites into candidate validation flights. These teams develop competing concepts, which can be rigorously evaluated prior to selection for flight. The technology providers for each concept are selected through an open, competitive, process during the project formulation phase. If their concept is selected for flight, they are incorporated into the Project Implementation Team, which develops, integrates, tests, launches, and operates the technology validation flight. Throughout the project implementation phase, the Implementation Team will document and disseminate their validation results to facilitate the infusion of their validated technologies into future OSS and OES science missions. The NMP has successfully launched its first two Deep Space flights for the OSS, and is currently implementing its first two Earth Orbiting flights for the OES. The next OSS and OES flights are currently being defined. Even though these flights are focused on specific Space Science and Earth Science themes, they are designed to validate a range of technologies that could benefit both enterprises, including advanced propulsion, communications, autonomous operations and navigation, multifunctional structures, microelectronics, and advanced instruments. Specific examples of these technologies will be provided in our presentation. The processes developed by the NMP also provide benefits across the Space and Earth Science enterprises. In particular, the extensive, nation-wide technology infrastructure developed by the NMP enhances the access to breakthrough technologies for both enterprises.
Li, Fuk K.↗
Microelectronics Research on Silicon-silicon Oxide Structures and Interfaces Quarterly Report No. 2, 1 Sep. - 30 Nov. 1964
Microelectronics research on silicon-silicon oxide structures and interfaces
MICROELECTRONICS↗
Entropy Analysis of FPGA Interconnect and Switch Matrices for Physical Unclonable Functions
Random variations in microelectronic circuit structures represent the source of entropy for physical unclonable functions (PUFs). In this paper, we investigate delay variations that occur through the routing network and switch matrices of a field-programmable gate array (FPGA). The delay variations are isolated from other components of the programmable logic, e.g., look-up tables (LUTs), flip-flops (FFs), etc., using a feature of Xilinx FPGAs called dynamic partial reconfiguration (DPR). A set of partial designs is created to fix the placement of a time-to-digital converter (TDC) and supporting infrastructure to enable the path delays through the target interconnect and switch matrices to be extracted by subtracting out common-mode delay components. Delay variations are analyzed in the different levels of routing resources available within FPGAs, i.e., local routing and across-chip routing. Data are collected from a set of Xilinx Zynq 7010 devices, and a statistical analysis of within-die variations in delay through a set of the randomly-generated and hand-crafted interconnects is presented.
97 MATHEMATICS AND COMPUTING↗
Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power
The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.
Hepp, Aloysius F.↗
Microelectronics research on silicon-silicon oxide structures and interfaces third quarterly report, 1 dec. 1964 - 28 feb. 1965
Electron microscopy calculations in minimum and maximum capacitance theories for silicon-silicon oxide structures and interfaces
SILICON OXIDE↗
The feasibility of inflight measurement of lightning strike parameters
The appearance of nonmetallic structural materials and microelectronics in aircraft design has resulted in a need for better knowledge of hazardous environments such as lightning and the effects these environments have on the aircraft. This feasibility study was performed to determine the lightning parameters in the greatest need of clarification and the performance requirements of equipment necessary to sense and record these parameters on an instrumented flight research aircraft. It was found that electric field rate of change, lightning currents, and induced voltages in aircraft wiring are the parameters of greatest importance. Flat-plate electric field sensors and resistive current shunts are proposed for electric field and current sensors, to provide direct measurements of these parameters. Six bit analog-to-digital signal conversion at a 5 nanosecond sampling rate, short-term storage of 85000 bits and long term storage of 5 x 10 to the 7th power bits of electric field, current and induced voltage data on the airplane are proposed, with readout and further analysis to be accomplished on the ground. A NASA F-106B was found to be suitable for use as the research aircraft because it has a minimum number of possible lightning attachment points, space for the necessary instrumentation, and appears to meet operational requirements. Safety considerations are also presented.
Crouch, K. E.↗
MIT Space Engineering Research Center testbed programs
The Space Engineering Research Center (SERC) at M.I.T., started in July 1988, has completed two and one-half years of research. This Semi-Annual Report presents annotated viewgraph material presented at the January 1991 Steering Committee and Technical Representative Review. The objective of the Space Engineering Research Center is to develop and disseminate a unified technology of controlled structures. There has been continued evolution of the concept of intelligent structures (including in this past year the first successful embedding of a microelectronic component into a structural element).
Crawley, Edward F.↗
Reliability and qualification of advanced microelectronics for space applications
This paper provides a discussion of the subject and an approach to establish a reliability and qualification methodology to facilitate the utilization of state-of-the-art advanced microelectronic devices and structures in high reliability applications.
advanced technologies reliability↗
Flux-Closure Domain Structures in Ferroelectric K 0.5 Na 0.5 NbO 3 Thin Films
Topological domain structures in ferroelectric materials have garnered increasing attention due to their intriguing physical properties and promising applications. While most existing topological structures in ferroelectric perovskite oxides originate from tetragonal or rhombohedral bulk phases, much less is understood about their counterparts in orthorhombic ferroelectrics. Here, in this work, we employ ferroelectric K 0.5 Na 0.5 NbO 3 (KNN) thin films as a model system and leverage phase-field simulations to theoretically predict the static structures and dynamic behaviors of three types of flux-closure domain configurations: in-plane (Type-I), out-of-plane (Type-II), and superdomain (Type-III) flux-closure structures. We systematically investigate the effects of finite size, misfit strains, and electrical boundary conditions on the formation and switching of these topological structures. For the Type-I structure, size reduction or small misfit strain facilitates a transition of the flux-closure pattern to polar vortices. Type-II structures emerge under open-circuit electrical boundary conditions of the film, forming at the junctions of specific domain walls with the film surface or the film–substrate interface. The formation mechanisms of these two flux-closure structures are rationalized from an energy perspective. We demonstrated switching capabilities of Type-II and Type-III structures by obtaining polarization–electric field hysteresis loops. Our simulations also reveal a reversible electric-field-induced transition between the orthorhombic and rhombohedral ferroelectric phases with a checkerboard domain pattern, during which the integrity of the flux-closure structure is preserved. These findings provide theoretical insights and practical guidance for identifying and manipulating topological structures in low-symmetry ferroelectrics, paving the way for developing energy-efficient microelectronic devices based on topological structures.
P-E loop↗
Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films
High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. Here, in this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m -1 K -1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.
36 MATERIALS SCIENCE↗
Defect Generation and Evolution in Irradiated Epitaxial Films and Heterostructures of Fe 3 O 4 and Cr 2 O 3
Abstract The functionality of nuclear structural materials, sensors, and microelectronics in harsh environments such as radiation relies on understanding defect generation and evolution processes in oxide layers. The initial radiation response of epitaxial thin films of Fe 3 O 4 (111), Cr 2 O 3 (0001), and Fe 3 O 4 (111)/Cr 2 O 3 (0001) heterostructures deposited on Al 2 O 3 (0001) by oxygen‐assisted molecular beam epitaxy and irradiated with 200 keV He + is characterized. X‐ray diffraction and X‐ray absorption near edge spectroscopy showed that the Cr 2 O 3 layers underwent significant lattice expansion and disordering under irradiation, whereas the Fe 3 O 4 layers do not exhibit noticeable changes. In contrast, positron annihilation spectroscopy revealed an evolution of cation vacancy point defects in the Fe 3 O 4 layers into larger vacancy clusters with increasing irradiation, while the cation vacancies in Cr 2 O 3 remained primarily as single vacancies and small clusters. The results suggest that the Fe 3 O 4 lattice can utilize the free volume of the larger vacancy clusters to relax but the small vacancies in the Cr 2 O 3 lattice do not facilitate relaxation. Comparing defect concentrations in the single layer films versus the heterostructure suggests that point defects may cross the interface from Fe 3 O 4 into Cr 2 O 3 . Together, these results enhance the understanding of the initial defect evolution mechanisms in oxide layers in harsh irradiation environments.
36 MATERIALS SCIENCE↗
Epitaxial Growth of 2D Core‐Crown SnS 2 /SnSe 2 Heterostructure Through Interfacial Modification with Polyvinylpyrrolidone
Abstract Developing generalized strategies for controlled synthesis of 2D heterostructures remains a significant challenge because the existing approaches often suffer from poor reproducibility and scalability. In this study, a solution synthesis approach for epitaxial core‐crown heterostructures with controlled band alignment, that overcomes these challenges is reported. Polyvinylpyrrolidone (PVP) is used as a structure‐directing agent to reduce lattice mismatch between SnS 2 and SnSe 2 (10‐10) surfaces and direct epitaxial growth of SnSe 2 crown on SnS 2 seed. Additionally, PVP adsorption to the basal plane prevents van der Waals stacking and stabilizes 2D heterostructures during synthesis. Driven by interfacial thermodynamics, the formation of the core‐crown heterostructure is highly reproducible and the size of the 2D heterostructure and relative areas of the core and the crown can be precisely controlled in a two‐step process by varying synthesis times for the seed and the crown. The identified growth pathway for 2D heterostructures can be generalized to other combinations of van der Waals materials to provide a platform for synthesizing micron‐size epitaxial heterostructures with a desired electronic structure for catalysis and microelectronics.
Liu, Lili [Physical and Computational Sciences Dir↗
Microwave and millimeter-wave resonant-tunneling devices
Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.
Sollner, T. C. L. Gerhard↗