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At least 19 records

Implications of parasitic absorption of electron cyclotron waves on ITER operation around half-field

The ITER Research Plan envision operation around half of the nominal magnetic field (i.e. around B = 2.65 T) as a path to baseline operation. This work discusses constraints on the optimal range of magnetic field, which is bounded in the lower limit by the presence of the third-harmonic electron cyclotron resonance at half field, and on the upper limit by the loss of core heating and current drive. Additionally, it will be shown that increasing the magnetic field by only 3%, i.e. to 2.75 T, eliminates the third harmonic parasitic absorption without compromising demonstration of access to H-mode, while operating at a magnetic field of 3.0 T—previously proposed for optimal use of the ion cyclotron system—would impair the use of the electron cyclotron system for core-heating and current drive. Operation at 2.65 T would still be possible if the polarization of the equatorial launcher is changed from X-mode to O-mode in the current flattop phase.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Submicron Thickness Characterization of Poly-Si Thin Films on Textured Surfaces by X-Ray Diffraction for Minimizing Parasitic Absorption in Poly-Si/SiO2 Passivating Contact Cells

Poly-Si/SiO2 passivating contacts have shown great potential for industry-relevant next-generation solar cells. Previous work has demonstrated an improved Jsc from dry reactive ion etching in an SF6 environment, using front metal grids as a self-aligned mask. Here, we show an effective method to measure the front poly-Si thickness on an alkaline textured surface using X-ray diffraction. The calculated thicknesses are compared with cross-section SEM analysis and Quokka simulation. We show that by thinning the front poly-Si from 200 nm to 60 nm, Jsc increases by 2.4 mA/cm2, leading to an absolute efficiency gain of 1.73%. Finally, we discuss possible reasons for the premature loss of passivation before the removal of all poly-Si.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Si Microwire-Array Photocathodes Decorated with Cu Allow CO 2 Reduction with Minimal Parasitic Absorption of Sunlight

High loadings of Cu were integrated on the light-facing side of Si microwire arrays used under simulated sunlight for the photoelectrochemical reduction of CO 2 (aq) to hydrocarbons in 0.10 M KHCO 3 (aq). Radial-junction n + p-Si microwire arrays decorated with Cu exhibited absolute photocurrent densities comparable to an uncovered Si surface. Moreover, with respect to a Cu foil electrode, the positive shift in the onset potential for hydrocarbon formation at n + p-Si/Cu microwire arrays was equal to or greater than the photovoltage of the semiconductor alone. Selective electrodeposition of Cu on the tips and sidewalls of Si microwires was responsible for the minimal parasitic reflection and absorption exhibited by the catalyst, such that light-limited, absolute current densities >25 mA·cm –2 were sustained for 48 h under simulated sunlight. Photoelectrodes prepared from semiconductors with low diode quality factors and electrocatalysts with large Tafel slopes are shown to benefit from increased microstructured surface area. Si microwire arrays are thus suitable for photoelectrochemical reactions requiring high loadings of metallic and reflective electrocatalysts.

25 ENERGY STORAGE↗

Modeling Spectrally-Selective Reflection for Thermal Management in Monofacial and Bifacial Modules

Parasitic absorption in photovoltaic modules is a major source of waste heat, which drives operating temperatures 20-30K above ambient. Spectrally-selective sub-bandgap reflection can reduce parasitic absorption, thereby improving module efficiency and power output. Here, we investigate the performance of 1-D spectrally-selective mirrors in monofacial Al BSF and PERC modules, and bifacial PERC modules. In monofacial modules, these mirrors offer >1.2% increase in energy yield compared to single-layer anti-reflection coatings, while cooling by over 1K on average. Mirrors reduced bifacial module parasitic absorption by up to 34 W/m2 out of 1240 W/m2 incident.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high V OC . The use of patterned poly-Si only under the front metal grid lines can significantly reduce the parasitic absorption loss without sacrificing voltage. In this work, we demonstrate a simple, manufacturing-friendly method of patterning the front poly-Si using a nanosecond UV (355 nm) laser. We found that with laser powers ≥3 W at a 400 mm/s scan speed, an estimated 1–4 nm thick stoichiometric SiO 2 layer was grown on TOPCon. This served as a mask for KOH-etching of 200 nm poly-Si, allowing for patterning of poly-Si fingers required for selective TOPCon. While laser powers above 3 W caused substantial deterioration in passivation quality, the resulting damage in J 0 was largely recovered by subsequent PECVD SiN x deposition. At 3 W, the full area J 0 was found to be 36.8 fA·cm –2 . Furthermore, this translates to 1.68 fA·cm –2 for 4.48% coverage from the wing area of the polyfinger lines (100 lines–100 μm wide and 30 μm metal) contributing to a total front J 0 of ~10 fA·cm –2 , well suited for 25% efficient solar cells

42 ENGINEERING↗

Improving energy yield in photovoltaic modules with photonic structures

When installed outdoors, Si solar cells typically operate 20 – 30 K above ambient conditions. These elevated operating temperatures lead to diminished performance, reducing efficiency by ~0.4%/K for crystalline Si cells and decreasing module lifetime. Since much of the elevated temperature of the modules derives from parasitic absorption of sub-bandgap sunlight by the contacts, encapsulants, or other materials, reflectors that remove the sub-bandgap radiation from the module before it is absorbed promise to reduce the operating temperature. However, there are many competing strategies to reject this light: selective reflectors could be integrated into the outer module glass, at the textured Si-encapsulant interface, or on the rear. Furthermore, many of these approaches are complex and expensive to fabricate. The issue of heating can be even more critical in bifacial modules: high fractions of rear irradiance can lead to higher operating temperatures. Prior to this project, relatively little was known about the optical strategies for temperature reduction in bifacial modules. The goal of this project was to quantitatively assess optical strategies for improving the energy yield via a combination of improved anti-reflection and sub-bandgap light rejection. We studied two complementary concepts: the performance of ideal structures to determine the upper limits to performance, and low-complexity structures made from standard materials as cost-effective implementations. We also studied the performance of these reflectors in different types of modules, including Al BSF, PERC, and bifacial. Here we build from our prior accomplishments in developing mirror optimization techniques, and make use of simulation methods that accurately capture the optical properties of the modules throughout the visible and near-infrared spectrum. We connect these optical properties to energy yield under realistic, outdoor conditions. We also experimentally fabricated mirrors, incorporated them into mini-modules, and performed outdoor testing of performance at NREL. We found definitively that spectrally-selective mirrors on the outside of the module cover glass offer the best performance, both under ideal conditions and for realistic, low- complexity mirrors. Mirrors at the Si cell/encapsulant interface are limited by the multiple reflections needed to remove sub-bandgap light. Mirrors at the cell surface and mirrors on the rear also cannot remove all the sub-bandgap light, since parasitic absorption also occurs in the cover glass, encapsulant, and front contacts, depending on the module configuration. Also, cell texturing places higher demands on any cell-surface mirror because multiple interactions with the mirror are required to reject sub bandgap light which compounds losses. For bifacial modules, mirrors on the back do provide additional cooling and energy yield improvements, and the mirrors can have the same structure. In the monofacial case up to 3.3K of cooling is possible for mirrors on the front, compared to 2.2K at the cell surface and 1.2K at the rear. For bifacial modules, up to 2.4K of cooling is possible when mirrors are included at both the front and back. Our realistic designs utilize 4 – 6 layers of common photovoltaic materials such as SiO 2 , TiO 2 , and SiN x , making them more cost effective. Finally, we used our models to study thermal management in bifacial modules with different back lamination materials, finding that glass-glass laminated modules operated hotter than equivalent glass-polymer backsheet modules, due solely to the increased absorption of light incident from the rear of the module. Improving the energy yield by 2%, which is achievable with these realistic designs, would lead to LCOE reductions of $0.03/kWh by 2030. These benefits make photovoltaic panels more accessible to the public and may reduce associated maintenance costs.

14 SOLAR ENERGY↗

The effect of remnant CdSe layers on the performance of CdSeTe/CdTe photovoltaic devices

Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in efficiency is due to Se alloying in the CdTe absorbers to form a CdSeTe/CdTe structure. The subsequent band gap grading increases the short circuit current density. The Se can be introduced by depositing a precursor thin film of either CdSe or a CdSeTe alloy and then diffusing the Se into the CdTe during the high temperature cadmium chloride activation process. Using CdSe is preferred because it is easier to control the Se concentration. However, during fabrication of the CdSeTe/CdTe devices, the CdSe thickness needs to be precisely controlled to prevent the retention of a CdSe remnant layer after the activation treatment. Retention of a remnant CdSe layer causes a dramatic reduction in device efficiency. In this work, we show that the reduction in efficiency is caused by a number of factors. The remnant CdSe layer is n-type which moves the position of the p-n junction. Also, it is widely thought that the CdSe remnants are photo-inactive. In this work, we clarify that the individual CdSe grains are actually highly photo-active. However, the grain sizes in the CdSe remnant and the adjacent CdSeTe layer are very small resulting in a high grain boundary area. Although the grain boundaries are passivated with chlorine, cathodoluminescence imaging and electrical measurements show that this is only partially effective. Also, EQE measurements show that the remnant CdSe causes parasitic absorption. Overall, the remnant CdSe layer causes a reduction in short circuit current density and device efficiency. The thickness of the CdSe precursor layer and the cadmium chloride activation process conditions must be precisely optimised to ensure that all the CdSe is consumed and inter-diffused to form the CdSeTe alloy for highest efficiency devices.

CdSe remnant↗

Measurement of Poly-Si Film Thickness on Textured Surfaces by X-Ray Diffraction in Poly-Si/SiOx Passivating Contacts for Monocrystalline Si Solar Cells

Polycrystalline Silicon on tunneling silicon oxide (poly-Si/SiOx) passivating contacts have shown great potential for the next-generation monocrystalline Si (c-Si) industrial photovoltaic technology. However, these cells typically suffer from strong parasitic absorption in the thick front poly-Si layer, which is designed to reduce metal-induced recombination. In previous work, we demonstrated an improved short-circuit current density, Jsc, by thinning the front poly-Si film in an SF6 plasma using the front metal grids as a self-aligned mask, but the sub - 100 nm thick poly-Si film is difficult to measure on an alkaline textured surface. Conventional optical techniques such as spectroscopic ellipsometry cannot be used due to the high scattering nature of the random pyramids. At poly-Si thicknesses below 50 nm, secondary electron microscopy (SEM) has difficulty distinguishing the poly-Si from the underlying c-Si substrate. Here, we demonstrate X-ray diffraction as an effective method to quantitatively measure the front poly-Si thickness. The thickness calculated from the diffraction peak height of the Si(111) crystallographic plane agrees well with the cross-section SEM analysis and simulations using SunSolve. We show that by thinning the front poly-Si from 200 to 60 nm, Jsc increased by 2.4 mA/cm2, while maintaining the same Voc. This led to an absolute efficiency gain of 1.73%. In addition, we also discuss possible reasons for the premature loss of passivation before the removal of all poly-Si, which prevented an even higher gain in Jsc.

light/electron beam induced current↗

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗

Photon management in silicon photovoltaic cells: A critical review

With the practical efficiency of the silicon photovoltaic (PV) cell approaching its theoretical limit, pushing conversion efficiencies even higher now relies on reducing every type of power loss that can occur within the device. Limiting optical losses is therefore critical and requires effective management of incident photons in terms of how they interact with the device. Ultimately, photon management within a PV cell means engineering the device and constituent materials to maximize photon absorption within the active semiconductor and therefore reduce the number of photons lost through other means, most notably reflection and parasitic absorption. There have been great advancements in the front and the rear side photon management techniques in recent years. This review aims to discuss these advancements and compare the various approaches, not only in terms of increases in photogenerated current, but also their compatibility with different PV cell architectures and potential trade-offs, like increased surface recombination or scalability for high-volume manufacturing. In this review, a comprehensive discussion of a wide variety of the front and the rear side photon management structures are presented with suggestions to improve the already achieved performance further. Here, this review is unique because it not only presents the recent development in photon management techniques, but also offers through analysis of these techniques and pathways to improve further.

14 SOLAR ENERGY↗

Patterned dielectric back contact design for GaAs thermophotovoltaic devices

-Patterned-dielectric back contact structures in optoelectronic devices are designed to boost the reflectance of light from the device back surface while retaining a low-resistance pathway for electrical conductance. Their reduced light absorption at near- and sub-bandgap photon energies leads to improved luminescence in light-emitting diodes, greater photon recycling, voltage, and efficiency in photovoltaic cells, and greater recuperation of unabsorbed sub-bandgap light in thermophotovoltaic (TPV) systems. However, diffraction from the patterned features can deflect incident light in propagation directions that lead to light trapping and parasitic absorption in the cell. Here, in this article, we use rigorous coupled-wave analysis (RCWA) to study three-dimensional diffractive scattering of electromagnetic waves by periodic metal point-contact gratings on 1.42-eV GaAs TPV cells, to analyze their effect on unwanted sub-bandgap absorption in order to achieve higher TPV system efficiency. Solutions of Maxwell's equations calculated using RCWA are compared to measured sub-bandgap reflectance in experimental GaAs TPV devices with varying metal point-contact diameters and spacing. Modeling and experiments indicate decreased total reflectance due to these diffractive effects for a small point contact diameter of 1 μm, and this effect is much stronger at higher contact coverage fractions.

14 SOLAR ENERGY↗

Development of ~25% Efficient Double Side Screen Printed Poly-Si/SiO x Passivated Contact Solar Cells

This program aims to overcome these challenges and develop high-efficiency (24-25%) double-side (DS) TOPCon solar cells by maximizing passivation on both sides while mitigating light absorption losses. To achieve this, the program will implement either thin (≤ 20 nm) homogeneous n-TOPCon on the entire front surface or selective area thick (≥ 100 nm) n-TOPCon only underneath the front metal contact with ~90% field region composed of dielectric passivated textured n-Si in between the poly-Si/metal grid. The rear side will feature ~250 nm-thick full-area planar p-TOPCon, which functions as the rear junction. Recombination and parasitic absorption losses in the front and rear TOPCon layers will be minimized by tailoring their doping profiles and thickness. Additionally, the device performance will be further enhanced through the optimization of bulk parameters, including the carrier lifetime, resistivity, and thickness of the n-type Si absorber. Finally, advanced metallization techniques, such as fine-line printing, and floating busbar or busbar-less designs, will be employed to reduce recombination, resistive, and optical losses. The program started with the development of a technology roadmap for DS-TOPCon cells to achieve target efficiency.

14 SOLAR ENERGY↗

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Despite the high efficiencies reached by heavily doped poly-Si/SiO x passivating contact solar cells, challenges like the high front parasitic absorption still limit their performance. Previously, we showed a wet etching technique using self-aligned metal grids to remove the front poly-Si in the non-metallized region. Here, we focus on the effective dielectric passivation on this tunneling oxide/n + in-diffused region. The effect of poly-Si thickness was studied to balance between the passivation quality and the current gain. We then compared various dielectric passivation schemes using SiN x , Al 2 O 3 , and stacks thereof via injection-level dependent lifetime and the transfer length method. We demonstrate a SiN x /Al 2 O 3 stack yielded the best passivation performance within device process limitation and obtained an improved front/back poly-Si/SiO x passivating contact device, with a short circuit current density of 41.8 mA/cm 2 and an efficiency of 21.8%.

anisotropic wet etching↗

Self-aligned concentrating immersion-lens arrays for patterning and efficiency recovery in scaffold-reinforced perovskite solar cells

In contrast to existing silicon, CIGS, and multi-junction cells that exhibit remarkable mechanical durability, perovskite solar cells have been shown to delaminate when subjected to the mechanical loads that occur during processing and field exposures, limiting their potential as a reliable solar technology. Mechanical reinforcement is thus essential for durable and reliable perovskite technologies. One current strategy to overcome the thermomechanical fragility of perovskite solar cells is to extrinsically shield them by introducing reinforcing scaffolds which partition the cell into many distinct microcells, but improvements in mechanical stability coincide with a reduced device efficiency due to parasitic absorption by the scaffold. We address this reduced efficiency by integrating concentrating immersion-lens arrays (CILAs) into scaffold-reinforced solar cells. These scaffolds are lithographically patterned by a maskless process, in which ultraviolet light is used to pattern the scaffolds through the CILAs, ensuring self-alignment and optical contact with the microcells. Perovskite devices are deposited into the microcells, and during operation, light is concentrated into the microcells and away from the insulating scaffolds, resulting in mechanically resilient solar cells with efficiencies comparable to planar devices. The CILAs also exhibit passive tracking of incident light—verified experimentally and with ray-tracing simulations—which is critical for optimal power output as the sun moves across the sky during the day. The simplicity of the fabrication process and the efficiency of the resulting scaffolded devices show that a lens-integrated scaffold-reinforced structure is a potential pathway to high-performance, robust, commercially viable perovskite solar cells.

14 SOLAR ENERGY↗

Stable magnesium zinc oxide by reactive Co-Sputtering for CdTe-based solar cells

Magnesium zinc oxide (MZO) is a promising front contact material for CdTe solar cells. Due to its higher band gap than traditional CdS, MZO can reduce parasitic absorption to significantly increase short-circuit current density while also providing a benefit of conduction band offset tuning through Mg:Zn ratio optimization. MZO has been successfully implemented into CdTe devices, however its stability has been of concern. The MZO stability issue has been attributed to the presence of oxygen in the CdTe device processing ambient, leading to double-diode behavior (S-kink) in the current density-voltage curves. Here we report on MZO thin films deposited by reactive co-sputtering. The reactively co-sputtered MZO thin films have encouraging stability, show no significant variation in work function of the surface over a period of 6 months, as measured by Kelvin probe. Energy conversion efficiencies of around 16% have been achieved both with and without presence of oxygen in device processing ambients across multiple research facilities. Finally, these efficiencies should be possible to increase further by tuning of the thin film deposition and device processing parameters, especially through optimization of the back contact.

14 SOLAR ENERGY↗

GaAs Thermophotovoltaic Patterned Dielectric Back Contact Devices with Improved Sub-Bandgap Reflectance

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 degrees C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D.

energy storage↗

Incorporating a naphthalene diimide polymer into a fullerene electron-transport layer to improve the fracture energy of perovskite solar cells

By blending a naphthalene diimide polymer into C 60 , we made a solution-processed electron-transport layer (ETL) for perovskite solar cells with fracture energies of 1.25 J m −2 , over 3× higher than that of thermally evaporated C 60 . Fracture energies were measured in a double cantilever beam configuration, and fracture surface images showed a fracture location near the ETL/perovskite interface, indicating a toughening of the interface between the ETL and Ag. We show that this modification to the ETL has no adverse effect on solar cell performance, and highlight the additional benefit of reduced parasitic absorption; a finding relevant for tandem solar cells.

electron transport layer↗