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At least 19 records

Proton and Gamma Radiation Effects in Undoped, Single-doped and co-doped YLiF4 and LuLiF4

Proton and gamma radiation effects in various YLiF4 and LuLiF4 crystals have been investigated. The radiation induced color centers compared with six different kinds of crystal samples in ranges up to 200 krads and 200 MeV. The radiation induced absorption coefficients are strongly dependent on polarization and concentration of rare-earth ions.

Lee, Hyung↗

Protonic Conduction of BaCe0.85YO. 1503 Doped with SrTiO3

Reformers based on ceramic membrane technology potentially offer hydrogen production that is comparable to the cost of fossil fuels. Protonic conducting ceramic with the chemical formula AB03 offers the promise of highly selective hydrogen separation at intermediate temperature (400-800 C). Among different perovskite-type oxides, BaCe03 and SrCe03 based compositions show high protonic conductivities but strong resistance to densification. X-ray diffraction studies on sintered specimens of BaCe0.85Y0.1503-6 show multi-phase formation which was found to show dependence upon powder synthesis method. Doping with SrTiO3 suppresses multi-phase formation and enhances grain growth. Conductivity measurements in temperature range of 200 to 1000 C were performed by ac impedance spectroscopy under dry and wet conditions. Sintering behavior, phase formation and conductivity results will be reported.

Dynys, Frederick W.↗

Negative Dielectric Constant Material Based on Ion Conducting Materials

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Gordon, Keith L.↗

Negative Dielectric Constant Material Based on Ion Conducting Materials

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Gordon, Keith L.↗

Ionic Liquids and New Proton Exchange Membranes for Fuel Cells

There is currently a great surge of activity in fuel cell research as laboratories across the world seek to take advantage of the high energy capacity provided by &el cells relative to those of other portable electrochemical power systems. Much of this activity is aimed at high temperature fie1 cells, and a vital component of such &el cells must be the availability of a high temperature stable proton-permeable membrane. NASA Glenn Research Center is greatly involved in developing this technology. Other approaches to the high temperature fuel cell involve the use of single- component or almost-single-component electrolytes that provide a path for protons through the cell. A heavily researched case is the phosphoric acid fuel cell, in which the electrolyte is almost pure phosphoric acid and the cathode reaction produces water directly. The phosphoric acid fie1 cell delivers an open circuit voltage of 0.9 V falling to about 0.7 V under operating conditions at 170 C. The proton transport mechanism is mainly vehicular in character according to the viscosity/conductance relation. Here we describe some Proton Transfer Ionic Liquids (PTILs) with low vapor pressure and high temperature stability that have conductivities of unprecedented magnitude for non-aqueous systems. The first requirement of an ionic liquid is that, contrary to experience with most liquids consisting of ions, it must have a melting point that is not much above room temperature. The limit commonly suggested is 100 C. PTILs constitute an interesting class of non-corrosive proton-exchange electrolyte, which can serve well in high temperature (T = 100 - 250 C) fuel cell applications. We will present cell performance data showing that the open circuit voltage output, and the performance of a simple H2(g)Pt/PTIL/Pt/O2(g) fuel cell may be superior to those of the equivalent phosphoric acid electrolyte fuel cell both at ambient temperature and temperatures up to and above 200 C. My work at NASA Glenn Research Center during this summer is to develop and characterize proton exchange membranes doped with ionic liquids. The main techniques used to characterize these materials are: Impedance Spectroscopy, NMR, DSC, TGA, DMA, IR, and SEM ...

Belieres, Jean-Philippe↗

Proton radiation damage in bulk n-GaAs

Bulk samples of Te-doped n-type GaAs were irradiated using 10 MeV to 24 MeV protons to fluences between 2 x 10 to the 11th power protons/sq cm and 2 x 10 to the 14th power protons/sq cm. Majority carrier electrical effects were measured using the vanderPauw techniques and it was observed that radiation damage was minimal at the 10 to the 11th power proton/sq cm fluence. For the higher fluences, carrier removal was proportional to Delta E/Delta x for the protons indicating ionization interactions between the protons and atoms. Thermal annealing was observed at 155 C.

Liu, D. C.↗

A I-V analysis of irradiated Gallium Arsenide solar cells

A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.

Heulenberg, A.↗

Polymer Electrolyte-Based Ambient Temperature Oxygen Microsensors for Environmental Monitoring

An ambient temperature oxygen microsensor, based on a Nafion polymer electrolyte, has been developed and was microfabricated using thin-film technologies. A challenge in the operation of Nafion-based sensor systems is that the conductivity of Nafion film depends on the humidity in the film. Nafion film loses conductivity when the moisture content in the film is too low, which can affect sensor operation. The advancement here is the identification of a method to retain the operation of the Nafion films in lower humidity environments. Certain salts can hold water molecules in the Nafion film structure at room temperature. By mixing salts with the Nafion solution, water molecules can be homogeneously distributed in the Nafion film increasing the film s hydration to prevent Nafion film from being dried out in low-humidity environment. The presence of organics provides extra sites in the Nafion film to promote proton (H+) mobility and thus improving Nafion film conductivity and sensor performance. The fabrication of ambient temperature oxygen microsensors includes depositing basic electrodes using noble metals, and metal oxides layer on one of the electrode as a reference electrode. The use of noble metals for electrodes is due to their strong catalytic properties for oxygen reduction. A conducting polymer Nafion, doped with water-retaining components and extra sites facilitating proton movement, was used as the electrolyte material, making the design adequate for low humidity environment applications. The Nafion solution was coated on the electrodes and air-dried. The sensor operates at room temperature in potentiometric mode, which measures voltage differences between working and reference electrodes in different gases. Repeat able responses to 21-percent oxygen in nitrogen were achieved using nitrogen as a baseline gas. Detection of oxygen from 7 to 21 percent has also been demonstrated. The room-temperature oxygen micro sensor developed has extremely low power consumption (no heating for operation, no voltage applied to the sensor, only a voltmeter is needed to measure the output), is small in size, is simple to batch-fabricate, and is high in sensor yield. It is applicable in a wide humidity range, with improved operation in low humidity after the additives were added to the Nafion film. Through further improvement and development, the sensor can be used for aerospace applications such as fuel leak detection, fire detection, and environmental monitoring.

Hunter, Gary W.↗

Progress in p(+)n InP solar cells fabricated by thermal diffusion

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Faur, Mircea↗

Electron and proton damage coefficients in low-resistivity silicon

The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.

Srour, J. R.↗

Activation energy and capture cross section of majority carrier traps in Zn doped InP

Schottky barrier diodes were fabricated on Zn doped InP Wafers. The diodes were radiation damaged with 2 MeV protons to a dose of 2 x 10(exp 12)cm(sup -2). The damage was analyzed by DLTS (deep level transient spectroscopy) using the double correlation technique. Capture cross sections were measured directly. Two major defects were observed in the DLTS spectra. The first defect, was H4 at Ev + 0.29 eV, with capture cross section 1.1 x 10(exp -17)cm(sup 2). The second defect, was H5 at Ev + 0.53 eV. Its capture cross section varied with temperature as described by the relationship sigma = sigma(sub 0) exp(delta(E)/kT) where sigma(sub 0) = 1.3 x 10(exp -19)cm(sup 2) and delta(E) = .08 eV. This relationship yields a sigma of 5.9 x 10(exp -21)cm(sup 2) at room temperature. The surprisingly small capture cross section of H5 and its temperature dependence are discussed in terms of the multiphonon emission process for carrier capture at the defect. The advantages of the improved experimental techniques used are also discussed.

Rybicki, George↗

Diffusion length damage coefficient and annealing studies in proton-irradiated InP

We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

Hakimzadeh, Roshanak↗

Preparation of Proton Exchange Membranes and Lithium Batteries from Melamine-containing Ormosils

Our laboratory has recently reported a series of rodcoil polymers for lithium batteries that display dimensionally stable films with good ionic conductivity. The rod segments consist of rigid linear and branched polyimides and the coil segments are polyethylene oxides (PEO). It has been proposed that good mechanical and transport properties are due to phase separation between the rod and coil segments. It was also observed that increased branching and molecular weight lead to increased conductivity. The following study was undertaken to assess the effects of phase separation in polyalkylene oxides connected by melamine linkages. Melamine was chosen as the linking unit because it provides a branching site, cation binding sites to help ionic transport between polymer chains, and the opportunity for self assembly through hydrogen bonding. Polymers were made by the reaction of cyanuric chloride with a series of amine-terminated alkylene oxides. A linear polymer was first made, followed by reaction of the third site on cyanuric chloride with varying ratios of monofunctional Jeffamine and (3-aminopropyl)triethoxysilane. The lithium trifluoromethane sulfonamide-doped polymers are then crosslinked through a sol-gel process to form free-standing films. Initial results have shown mechanically strong films with lithium conductivities on the order of 2 x 10(exp -5) S/cm at ambient temperature. In a separate study, organically modified silanes (Ormosils) that contain sulfonic acid derivatized melamines have been incorporated into proton exchange membranes. The membranes are made by reaction of the primary amine groups of various ratios of melamine derivative and difunctional Jeffamine (MW = 2000) with the epoxide group of (3-Glycidyloxypropyl)trimethoxysilane. The films were then cross-linked through a sol-gel process. Resulting sulfuric acid doped films are strong, flexible, and have proton conductivities on the order of 2 x l0(exp -2) S/cm (120 C, 25% relative humidity). Our best results have been observed when films contain 60% PEO and 40% sulfonated melamine.

Tigelaar, Dean M.↗