Search NASA⌕ Search

SEARCH · Search NASA

Results for “resistors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Artificial spin ice phase-change memory resistors

Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Monitoring the Structural Health of the Stage-Four Gibbs Resistor In Order to Maintain a Functioning Pulse-Forming Network

The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility at Los Alamos National Laboratory (LANL) is a critical facility used for nuclear weapons research and development (Los Alamos National Laboratory). Its primary function is to provide high-resolution, real-time images of the behavior of materials under extreme conditions, specifically during the hydrodynamic testing of nuclear weapons surrogates. The facility uses advanced radiographic techniques, such as dual-axis X-ray imaging, to capture detailed snapshots of these materials as they react to high-pressure environments. DARHT plays a key role in maintaining the safety, security, and reliability of the U.S. nuclear arsenal, supporting the Stockpile Stewardship Program. The facility helps ensure that nuclear weapons perform as designed without the need for nuclear tests. Its dual-axis radiography provides more precise data than traditional single-axis imaging, offering a comprehensive view of the internal dynamics of a weapon's primary stage.

42 ENGINEERING↗
DOE OSTI2020

High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.

42 ENGINEERING↗
DOE OSTI2022

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗
DOE OSTI2024

Low-Power Characterization and Integration of Carbon Black Resistive Ink for Aerosol Jet-Printed RF Components

Aerosol jet printing (AJP) is gaining attention in additive manufacturing research, especially in the discipline of microwave engineering. Currently, no reliable AJP method exists to fabricate resistors that are both electrically small and with a resistance compatible with waveguide impedances for use in microwave components. In this work, the commercially available Metalon JR-038 is characterized and used to fabricate a resistor that is 100 μ m long by 250 μ m wide for the first time to the best of our knowledge. Furthermore, this resistor was then used to fabricate a Ka-band Wilkinson power divider using only the AJP process.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Varistors: A Useful Tool for Superconducting Magnet Quench Protection

A perfect varistor is a constant voltage resistor as a function of current through the resistor. A perfect varistor can't exist, because its resistance would be infinite at zero current. In electronic devices, varistors are often used as surge protectors. A varistor can be used in place of an ordinary resistor as the discharge resistance across superconducting coil sections. When used this way, the integral of I 2 dt during the discharge can be reduced by almost one third. When a varistor is used for quench protection of coils that are coupled to shorted secondary circuits the integral of I 2 dt can be reduced much more. Furthermore, this can be a key factor when coil current densities and stored energies are high as in many potential HTS magnet systems. This paper discusses the types of varistors that are commercially available and their characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

High voltage switch with cascaded transistor topology

A switching apparatus includes three or more series-connected transistors, and it further includes a balancing network. The balancing network includes a resistor network configured to divide a voltage from a voltage source across the series-connected transistors. The resistor network includes at least two resistive legs connected in parallel. In each resistive leg, two or more resistors are connected in series. The balancing network may further comprise at least one capacitive leg of series-connected capacitors connected across the series-connected transistors, and it may further comprise at least one leg of series-connected avalanche diodes connected across the series-connected transistors for overvoltage protection. In example embodiments, the series-connected transistors are JFETs. In other example embodiments, the series-connected transistors may be HEMTs or GaN transistors.

Gill, Lee↗
DOE OSTI2024

Embedded Fluidic Sensing and Control with Soft Open‐Cell Foams

Abstract The synthesis of soft matter intelligence with circuit‐driven logic has enabled a new class of robots that perform complex tasks or conform to specialized form factors in unique ways that cannot be realized through conventional designs. Translating this hybrid approach to fluidic systems, the present work addresses the need for sheet‐based circuit materials by leveraging the innate porosity of foam—a soft material—to develop pneumatic components that support digital logic, mixed‐signal control, and analog force sensing in wearables and soft robots. Analytical tools and experimental techniques developed in this work serve to elucidate compressible gas flow through porous sheets, and to inform the design of centimeter‐sized foam resistors with fluidic resistances on the order of 10 9 Pa s m −3 . When embedded inside soft robots and wearables, these resistors facilitate diverse functionalities spanning both sensing and control domains, including digital logic using textile logic gates, digital‐to‐analog signal conversion using ladder networks, and analog sensing of forces up to 40 N via compression‐induced changes in resistance. By combining features of both circuit‐based and materials‐based approaches, foam‐enabled fluidic circuits serve as a useful paradigm for future hybrid robotic architectures that fully embody the sensing and computing capabilities of soft fluidic materials.

Rajappan, Anoop↗
DOE OSTI2023

Faraday detector uranium isotope ratio measurement: Insights from solution- and laser ablation-based sampling methodologies on the Neoma MC-ICP-MS

In this study we utilize an all-faraday cup detector configuration on the Neoma MC-ICP-MS to perform uranium isotope ratio determinations from certified reference materials and a nuclear fuel precursor material via solution and laser ablation based sampling methodologies. The goal in performing these measurements is primarily to demonstrate that the all-faraday cup method can produce highly precise and accurate isotope ratios even at relatively low signal intensity levels while also developing a preliminary understanding of how the complex interplay between different amplifier resistor levels (e.g. 10 11 vs 10 13 Ω) and integration times impacts the precision and accuracy of different types of measurements. Our results show that the faraday cups with 1013 Ω resistors in their amplifier feedback loops can be used to produce accurate and relatively precise isotope ratios for ion beams down to ~5 K cps. However, at the lower end of the signal intensities observed in this study, longer integration times are necessary to mitigate the impact of ion beam instability that can occur during laser ablation based sampling. Despite this potential limitation, the all-faraday cup method is highly versatile as exemplified by the analysis of a collection of uranium reference materials with highly variable uranium isotopic compositions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Broad Applicability of Electrochemical Impedance Spectroscopy to the Measurement of Oxygen Nonstoichiometry in Mixed Ion and Electron Conductors

Oxygen non-stoichiometry is a fundamental feature of mixed ion and electron conductors (MIECs). In this work a general electrochemical method for determining non-stoichiometry in thin film MIECs, via measurement of the chemical capacitance, is demonstrated using ceria and ceria-zirconia (Ce 0.8 Zr 0.2 O 2-δ ) as representative materials. A.C. impedance data are collected from both materials at high temperature (750-900 °C) under reducing conditions with oxygen partial pressure (pO 2 ) in the range 10-13 to 10-20 atm. Additional measurements of ceria-zirconia films are made under relatively oxidizing conditions with pO 2 in the range 0.2 to 10 -4 atm and temperatures of 800-900 °C. Under reducing conditions, the impedance spectra are described by a simple circuit in which a resistor is in series with a resistor and capacitor in parallel, and thickness dependent measurements are used to resolve the capacitance into interfacial and chemical terms. Under more oxidizing conditions, the impedance spectra (of Ce 0.8 Zr 0.2 O 2-δ ) reveal an additional diffusional feature, which enables determination of the ionic resistance of the film in addition to the capacitance, and hence the transport properties. A generalized mathematical formalism is presented for recovering the non-stoichiometry from the chemical capacitance, without recourse to defect chemical models. The ceria non-stoichiometry values are in good agreement with literature values determined by thermogravimetric measurements but display considerably less scatter and are collected on considerably shorter timescales. Here, the thermodynamic analysis of Ce 0.8 Zr 0.2 O 2-δ corroborates earlier findings that introduction of Zr into ceria enhances its reducibility.

08 HYDROGEN↗
DOE OSTI2025

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. Here, we describe a powerful yet straightforward experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic-impedance background-correction procedure to measure the temperature-dependent impedance (magnitude and phase) of up to ten individual passive circuit elements in a single cryostat run. We show how the model unambiguously identified a ∼20× drop in capacitance for 22 μF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with a parasitic capacitance of ∼300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to measure 10 and 22 pF thin-film capacitors and 100 MΩ thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, we showed that the simple data-acquisition method, coupled with our analysis model, enabled the measurement of component parasitics, and effectively extended the accuracy of a commercial LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies. We also showed that, in the current configuration, our simple approach is limited to a capacitance accuracy of ∼10 pF.

Carpenter, R. J. [Santa Clara Univ., Santa Clara, ↗
DOE OSTI2020

Scaling of pulsed nanosecond capillary plasmas at different specific energy deposition

Nano-second, capillary discharges (nCDs) are unique plasma sources in their ability to sustain high specific energy deposition ω dep approaching 10 eV/molecule in molecular gases. This high energy loading on short timescales produces both high plasma densities and high densities of molecular exited states. These high densities of electrons and excited states interact with each other during the early afterglow through electron collision quenching and associative ionization. In this paper we discuss results from a two-dimensional computational investigation of a nCD sustained in air at a pressure of 28.5 mbar and with a voltage amplitude 20 kV. Discharges were investigated for two circuit configurations—a floating low voltage electrode and with the low voltage electrode connected to ground through a ballast resistor. The first configuration produced a single ionization wave from the high to low voltage electrode. The second produced converging ionization waves beginning at both electrodes. With a decrease of the tube radius, the velocity of the ionization fronts decreased while the shape of the ionization wave changed from the electron density being distributed smoothly in the radial direction, to being hollow shaped where there is a higher electron density near the tube wall. For sufficiently small tubes, the near-wall maxima merge to have the higher density on the axis of the capillary tube. In the early afterglow, the temporal and radial behavior of the N 2 (C 3 Π u ) density is a sensitive function of ω dep due to electron collision quenching. Finally, these trends indicate that starting from ω dep $\geqslant$ 0.3 eV/molecule, it is necessary to take into account interactions of electrons with electronically excited species during the discharge and early afterglow.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Measurement of the onset of nucleate boiling in liquid xenon

We report the first precision measurement of the superheat temperature required for bubble nucleation in liquid xenon of Δ T wall,ONB = (16.9±0.5) K and Δ T wall,ONB = (19.2 +0.4 -1.1 ) K at pressures of P = (0.98±0.02) bar and P = (1.32 +0.05 -0.01 ) bar, respectively. Both are measured at a subcooled bulk fluid temperature of ~ 162 K. A dedicated liquid xenon setup is used to measure the temperature at which bubble nucleation first appears on the flat surface of a resistor. The associated average heat flux at the surface of the resistor is determined using fluid dynamics simulations. Future experiments can use these experimental results to determine the likelihood of boiling in liquid xenon and to design effective thermal sinks that prevent bubble nucleation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Pre-production results from ATLAS ITk Strip Sensors Quality Assurance Testchip

The production of strip sensors within the framework of the ATLAS Inner Tracker (ITk) development is a process which requires continuous evaluation during the full production period (about 4 years). Such an evaluation is divided into two different parts: Quality Control (QC), which focuses on the final product (the actual sensors) and tries to identify possible defects once the fabrication is completed, and Quality Assurance (QA), which aims to prevent deviations in the manufacturing process and uses specifically-designed test structures. The initial sensor pre-production consists of 5% (1041 sensors) of the total number of sensors expected during production. As part of pre-production, the collaboration has measured key parameters from miniature strip sensors (minis), monitor diodes (MD8), and the ATLAS Testchip, before and after irradiation. In this contribution we focus on the analysis of the results of the MD8 and the Testchip. All parameters have been obtained from the test structures (MD8, bias resistors, interdigitated structures, field oxide capacitors, coupling capacitors, punch-through protection structures and cross-bridge resistors) measured at the different test sites (KEK/Tsukuba, Birmingham, Toronto, Ljubljana, Valencia, Carleton, Prague, CNM-Barcelona). The results are compared to predefined pre- and post-irradiation specifications for each tested parameter.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

High rate studies of the ATLAS sTGC detector and optimization of the filter circuit on the input of the front-end amplifier

Abstract The Large Hadron Collider (LHC) at CERN is expected to be upgraded to the High-Luminosity LHC (HL-LHC) by 2029 and achieve instantaneous luminosity around 5–7.5 × 10 34 cm -2 s -1 . This represents a more than 3–4 fold increase in the instantaneous luminosity compared to what has been achieved in Run 2. The New Small Wheel (NSW) upgrade is designed to be able to operate efficiently in this high background rate environment. In this article, we summarize multiple performance studies of the small-strip Thin Gap Chamber (sTGC) at high rate using nearly final front-end electronics. We demonstrate that the efficiency versus rate distribution can be well described by an exponential decay with electronics dead-time being the primary cause of loss of efficiency at high rate. We then demonstrate several methods that can decrease the electronics dead-time and therefore minimize efficiency loss. One such method is to install either a pi-network input filter or pull-up resistor to minimize the charge input into the amplifier. We optimized the pi-network capacitance and pull-up resistor resistance using the results from our measurements. The results shown here were not only critical to finalizing the components on the front-end board, but also are critical for setting the optimal operating parameters of the sTGC detector and electronics in the ATLAS cavern.

Instruments & Instrumentation↗