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Results for “semiconductor device radiation effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Characterization and modeling of radiation effects NASA/MSFC semiconductor devices

A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.

Kerns, D. V., Jr.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 1

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

Price, W. E.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 2

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Price, W. E.↗
NASA NTRS1985

Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.

Martin, K. E.↗
NASA NTRS1990

Total-dose radiation effects data for semiconductor devices (1989 supplement)

Steady state, total dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. Two primary radiation source types were used: Cobalt-60 gamma rays and a Dynamitron electron accelerator capable of delivering 2.5 MeV electrons at a steady rate.

Martin, Keith E.↗
NASA NTRS1986

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

Martin, K. E.↗
NASA NTRS1986

Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

Martin, K. E.↗
NASA NTRS1982

Total-dose radiation effects data for semiconductor devices, volume 3

Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

Price, W. E.↗
NASA NTRS2017

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.

Radiation effects↗
NASA NTRS1996

Device Responses and Effects

This section of the short course discusses radiation effects in semiconductor devices. This is a broad topic, and it is not possible to cover all aspects in a course of this length. The approach that will be used is to briefly review basic mechanisms and device responses, and to go into more detail for new topics such as latchup that have not been covered in as much detail in previous short courses.

radiation effects semiconductor devices semiconduc↗
NASA NTRS1972

Jupiter radiation test levels and their expected impact on an encounter mission

The upper limit, of electron and proton fluences for a thermoelectric outer planet spacecraft mission in a near-Jupiter environment, for use as radiation design restraints, were extracted from a model of the Jovian trapped radiation belts. Considerations of radiation effects in semiconductor devices were employed to construct simplified radiation test levels based on the design restraints. Corresponding levels, based on the nominal belt models, are one to three orders of magnitude smaller. In terms of expected radiation-induced degradation in semiconductor devices, an encounter with an environment as severe as the design restraints would require hardening the system in order to guarantee high reliability. On the other hand, the nominal levels would only necessitate care in the selection of components and the avoidance of certain semiconductor components.

Barengoltz, J. B.↗