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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Infrared photoresponse of silicon devices at 1.15 microns

The photoconductive absorption of silicon devices at 1.15 microns is through band-to-band transitions with the simultaneous absorption of a 57.7 meV phonon. Its temperature dependence arises both from the changing phonon population and, more significantly, from the change in silicon bandgap with temperature. The temperature dependence of the photoresponse of quasi-intrinsic silicon samples is in good agreement with the optical absorption data of Macfarlane et al. More heavily doped silicon devices show a photoresponse extending to a lower temperature and having a smaller temperature dependence than intrinsic silicon. This is explained in terms of bandgap narrowing. Comparison with theoretical curves enables the resolution of bandgap reductions at the meV level.

Lanyon, H. P. D.↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗
NASA NTRS1967

Thermal and bias cycling stabilizes planar silicon devices

Terminal burn-in or baking step time in the processing of planar silicon devices is extended to reduce their inversion tendencies. The collector-base junction of the device is also cyclically biased during the burn-in.

Harris, R. E.↗
NASA NTRS1994

Silicon device performance measurements to support temperature range enhancement

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Bromstead, James↗
DOE OSTI2020

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Ni, Ze↗
NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C. At the high temperature end of the temperature range, the intrinsic carrier concentration increases to equal the doping concentration level and the silicon behaves as an intrinsic semiconductor. The increase in intrinsic carrier concentration results in a shift of the Fermi level toward mid-bandgap at elevated temperatures. This produces a shift in devices characteristics as a function of temperature. By increasing the doping concentration higher operating temperatures can be achieved. This technique was used to fabricate low power analog and digital devices in silicon with junction operating temperatures in excess of 300 C. Additional temperature effects include increased p-n junction leakage with increasing temperature, resulting in increased resistivity. The temperature dependency of physical properties results in variations in device characteristics. These must be quantified and understood in order to develop extended temperature range operation.

Bromstead, James↗
NASA NTRS2014

Precision Control of Thermal Transport in Cryogenic Single-Crystal Silicon Devices

We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than, even when the surface is fairly smooth, 510 nm rms, and the peak thermal wavelength is 0.6 microns. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of +/-8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

multi-moded single-crystal silicon beams↗
DOE OSTI2020

Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Excess carrier concentration in silicon devices and wafers: How bulk properties are expected to accelerate light and elevated temperature degradation

Light and elevated temperature induced degradation (LeTID) is accelerated nearly linearly by the presence of excess carriers. It is therefore important to understand how excess carrier concentration (Δn) changes as a function of exposure conditions, materials properties, and sample structure. We simulate Δn as a function of wafer thickness and bulk minority carrier lifetime (τ) in solar cells and wafers using SCAPS and Quokka3. We also derive closed-form analytic expressions. For wafers, there is a near-linear relationship between Δn and τ or thickness, whereas for solar cells, Δn in the bulk may become limited by rear surface recombination. Thus, LeTID may progress more quickly in wafers than in cells, with a stronger dependence on τ. When comparing experiments, observed degradation rates must be corrected between samples or conditions to account for differences in Δn. This study demonstrates three tools to estimate the magnitude of such corrections, which can aid in the quantitative interpretation of LeTID data and performance predictions. Finally, while each tool yields similar results, there are advantages to each approach that must be weighed in terms of simplicity of inputs versus sophistication of treatment. Incomplete specification of back contact characteristics in commercial products is identified as an important contributor to uncertainty in expected LeTID rates.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.

Johnson, R. Wayne↗
NASA NTRS1992

Silicon device performance measurements to support temperature range enhancement

Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.

Bromstead, James↗
NASA NTRS1992

Silicon device performance measurements to support temperature range enhancement

Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast to the BJT (bipolar junction transistor), MOSFET, and IGBT (insulated gate bipolar transistor) devices tested, the breakdown voltage of the MCT decreases significantly with increasing temperature.

Bromstead, James↗