SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
This paper reports heavy ion, proton, and laser induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA spacecrafts. The compendium covers devices tested within the years of 2010 through 2012.
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the AD9364 from Analog Devices.
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.
The Analog Devices ADV212 was initially tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in July of 2013. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI), soft data errors classified as single event upsets (SEU), and, of particular concern, single event latch-ups (SEL). All error types occurred so frequently as to make accurate measurements of the exposure time, and thus total particle fluence, challenging. To mitigate some of the risk posed by single event latch-ups, circuitry was added to the electrical design to detect a high current event and automatically recycle power and reboot the device. An additional heavy-ion test was scheduled to validate the operation of the recovery circuitry and the continuing functionality of the ADV212 after a substantial number of latch-up events. As a secondary goal, more precise data would be gathered by an improved test method, described in this test report.
The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).
The NEPP Reconfigurable Field-Programmable Gate Array (FPGA) task has been charged to evaluate reconfigurable FPGA technologies for use in space. Under this task, the Xilinx single-event-immune, reconfigurable FPGA (SIRF) XQR5VFX130 device was evaluated for SEE. Additionally, the Altera Stratix-IV and SiliconBlue iCE65 were screened for single-event latchup (SEL).
Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).
Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).
Single-Event Effects (SEE) testing was conducted on the AMD e9173 Graphics Processor Unit (GPU). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center.
Explore the source record for details and available documents.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 1200 microprocessor. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
The Analog Devices ADXL354 3-AXIS MEMS accelerometer was tested for single-event effects, both destructive and non-destructive. The device was characterized for single-event upset (SEU) sensitivity and evaluated for any possibility of single-event latchup (SEL), single-event dielectric rupture (SEDR) and single-event functional interrupts (SEFI). Single-event transient (SET) response was also monitored.
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX2 System on Chip (SOC). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
The purpose of this test was to characterize single event effects (SEE) in the LCMXO3D-9400HC-5BG484I, a low power and low density field programmable gate array (FPGA). The SEE concerns for the device that were investigated in this testing are single event upsets (SEUs) in the configuration static random-access memory (SRAM), SEUs in the FPGA fabric, single event latch up (SEL), and single event functional interrupts (SEFIs). Testing was conducted at Lawrence Berkeley National Laboratory (LBNL) on August 26th, 2024 and August 28th, 2024.
Static random access memory (SRAM) upset rates in field programmable gate arrays (FPGAs) from the Xilinx Virtex 2 family have been tested for radiation effects on configuration memory, block RAM and the power-on-reset (POR) and SelectMAP single event functional interrupts (SEFIs). Dynamic testing has shown the effectiveness and value of Triple Module Redundancy (TMR) and partial reconfiguration when used in conjunction. Continuing dynamic testing for more complex designs and other Virtex 2 capabilities (i.e., I/O standards, digital clock managers (DCM), etc.) is scheduled.
The purpose of this test was to determine the heavy ion-induced single-event effect (SEE) susceptibility of the Samsung solid state drive (SSD) containing the Vertical-NAND (VNAND) flash technology. This test was supported by the NASA Electronics Parts and Packaging (NEPP) Program.
This report is the result of funding by the NASA Electronic Parts and Packaging Program (NEPP) and the combined efforts of members within the Xilinx Radiation Test Consortium (XRTC), sometimes known as the Xilinx Single Event Effects (SEE) Test Consortium. The XRTC is a voluntary association of aerospace entities, including leading aerospace companies, universitie and national laboratories, combining resources to characterize reconfigurable, field programmable gate arrays (FPGAs) for aerospace applications. Previous publications of Virtex-4 radiation results are for commercial (non-epitaxial) devices; see, for example, Refs. 1–5. A notable exception is Ref. 6, which presents XRTC upset measurements of storage elements in the PowerPC405s in the XQR4VFX60. This work represents a continuation of the efforts reported in the “Virtex-4QV Static SEU Characterization Summary” [7]. The contents of this report describe various Single Event Functional Interrupt (SEFI) and Single Event Upset (SEU) modes seen while dynamically exercising the clocked resources within Virtex-4 devices and the corresponding mitigation techniques related to the aforementioned observed SEFI modes.