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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
DOE OSTI2023

Validation of the single-event method for low-energy electron transport via stopping power calculations with $\mathrm{MCNP}$

Monte Carlo simulations of low-energy ( <50 keV) electron transport in matter are essential for a broad range of application fields. Several Monte Carlo codes have developed specialized treatments for this case, but a comprehensive validation of low-energy electron transport for general-purpose simulations remains lacking in the literature. One approach to accomplish this validation is calculation of stopping power using low-energy electron transport physics, as stopping power is a fundamental radiation transport quantity which must be simulated accurately for nearly any application. Here in this work, we use the Monte Carlo N-Particle (MCNP) radiation transport code with the single-event method for electron transport to calculate stopping powers of low-energy electrons (50 eV to 30 keV) in 41 elemental solids, 14 compound solids, and five rare gas solids, comparing simulation results to published semi-empirical stopping power calculations from optical measurements. In general, the simulations give good agreement (typically within ±10%) with semi-empirical stopping power values at higher energies: 300 eV and above for most elemental solids, 1 keV and above for compound solids, and 400 eV and above for rare gas solids. Agreement between MCNP and semi-empirical values is worse below these energies. The most significant source of error is the EPRDATA14 cross section data, which does not account for changes in electronic structure due to solid-state bonding, particularly in compound materials. The simplistic model of atomic excitation used to generate the EPRDATA14 cross sections is another key source of error. Additionally, the breakdown of the continuous slowing-down approximation introduces significant uncertainty at low energies, although this is a limitation of the calculation method and not of the simulation procedure. Accounting for these and other uncertainty sources, the single event method in MCNP is robust and able to give good accuracy for a variety of low-energy electron transport problems through diverse kinds of materials.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2026

Validation of electron backscattering in the MCNP6.3 code

A new electron backscattering validation suite has been developed for the MCNP® code. The calculations in this suite cover both condensed history and single-event transport methods, seven different elemental materials ranging from beryllium to uranium, and incident electron energies from 200 eV to 14.1 MeV. In general, the accuracy of the MCNP code for electron backscattering calculations is energy-dependent. For incident electron energies below 2 keV, the condensed history method is not applied while the single-event method shows poor agreement with experimental measurements due to poor accuracy of the underlying atomic data. For incident energies between 2 keV and 256 keV, the single-event method typically shows better agreement with experiments, while for incident energies above 256 keV the condensed history method gives better accuracy. Additionally, agreement with experimental data is generally worse for low- Z materials such as beryllium and carbon, which may reflect deficiencies in the data or physics underlying electron transport through light elements in the MCNP code. The new electron backscattering validation suite, along with the previously introduced electron stopping power and Lockwood energy deposition validation suites, provide MCNP users with a quantified understanding of the uncertainties in electron transport calculations. Future improvements to electron transport in the MCNP code are necessary for low energies (≤ 2 keV) and for low- Z materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The Mu2e Digitizer ReAdout Controller (DiRAC): characterization and radiation hardness

The Mu2e experiment at Fermilab will search for the neutrino-less coherent conversion of a muon into an electron in the field of a nucleus. Mu2e detectors comprise a straw tracker, an electromagnetic calorimeter and a veto for cosmic rays. The calorimeter employs 1348 Cesium Iodide crystals readout by silicon photo-multipliers and fast front-end, and digitization electronics. The digitization board is named DiRAC (Digitizer ReAdout Controller) and 140 cards are needed for the readout of the full calorimeter. The DiRACs are hosted in crates located on the external surface of calorimeter disks, inside the detector solenoid cryostat and must sustain very high radiation and magnetic field so it was necessary to fully qualify it. Several version of prototypes were validated for operation in a high-vacuum (10−4 Torr) and under a 1T magnetic field. An extensive radiation hardness qualification campaign, carried out with photons, 14 MeV neutron beams, and 200 MeV protons, certified the DiRAC design to sustain doses up to 12 Krad, neutron fluences up to ∼ 1011 1 MeV neq/cm2, and very low occurrences of single-event effects. The qualification campaigns and quality assurance procedures will be reviewed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Mechanism of the wurtzite to rocksalt phase transformation in cadmium sulfide single crystals shock compressed along the 𝑐-axis to elastic impact stresses of ∼ 5 GPa

Cadmium sulfide (CdS), which exhibits a wurzite (WZ) to rocksalt (RS) phase transformation at elevated stresses, is an ideal system to address the role of deformation on phase transformation mechanisms and kinetics. CdS has been shown to have very different elastic-inelastic behavior for shock propagation along the WZ 𝑐- and 𝑎-axes, and also exhibits significant differences in the time scale for the phase transformation when shocked along these different axes. As an important first step in examining the role of deformation in shock-induced phase transformations, here we present in situ, time-resolved x-ray diffraction (XRD) measurements in single-event, shock wave experiments on CdS single crystals shocked along the WZ 𝑐-axis to elastic impact stresses near or above ∼ 5 GPa, where a marked increase in the kinetics of this transformation has been reported. The XRD measurements are compared with forward diffraction simulations to evaluate different proposed phase transformation mechanisms and are shown to be consistent with a shearing mechanism that results in the RS [001] direction being aligned with the original WZ 𝑐-axis and the RS [110] direction being aligned with the original WZ 𝑎-axis. In order to reproduce all observed RS diffraction spots the forward diffraction simulations required three different RS crystalline domains, each with a [110] direction aligned with one of the three original WZ 𝑎-axes, and a significant mosaicity, particularly about the RS [001] direction (the direction of shock propagation). In conclusion, this large mosaicity is likely due to variations in the possible shearing mechanisms that connect the WZ and RS structures, which can create crystallites with up to ∼ ±10° of relative rotations about the RS [001] direction, as well as further rotation of these crystallites as they grow, merge, and coalesce.

Crystal structure↗
DOE OSTI2023

Impact of O4 future detections on the determination of the dense matter equations of state

Here, in view of the next LIGO-Virgo-KAGRA Observing period O4 (to start in Spring 2023), we address the question of the ability of the interferometers network to discriminate among different neutron stars equation of states better than what was possible with the observation of the binary neutron stars merger GW170817. We show that the observation of an event similar to GW170817 during O4 would allow us to resolve the dimensionless effective tidal deformability $\tilde{Λ}$ within an uncertainty 7 times better than the one obtained in O2. Thanks to the expected increase in sensitivities, we show that any GW170817-like single-event within a distance of 100 Mpc would imply significantly improved constraints of the neutron stars equations of state. We also illustrate the important impact of the noise in the analysis of the signal, showing how it can impact the effective tidal deformability probability density function for large signal-to-noise ratio.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2025

Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation

Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.

Breeding, Matthew Luel [Sandia National Laboratori↗
DOE OSTI2026

Nuclear recoil detection with color centers in bulk lithium fluoride

We present initial results on the detection of nuclear recoils in lithium fluoride (LiF) through the fluorescence of color centers created by particle interactions in the crystal lattice. Using light-sheet fluorescence microscopy, we image nuclear recoil tracks from both fast and thermal neutron interactions deep within a cubic-centimeter-scale sample. Automated three-dimensional feature extraction based on machine-learning tools enables the identification and classification of individual events. We observe that the fluorescence response of LiF to gamma irradiation is strongly suppressed, by a factor of 30–50 compared to neutron exposure, demonstrating intrinsic insensitivity to electromagnetic backgrounds. The observed and simulated event characteristics are consistent, including their number, size, and topology. These results establish the feasibility of LiF as a scalable detection medium for rare nuclear-recoil events and constitute a first step toward 10–1000 g scale detectors with single-event sensitivity for applications in reactor-neutrino detection, neutron spectroscopy, and dark matter searches.

Aroujo, G R [University of Zurich]↗
DOE OSTI2025

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Relocation of the Seismicity of the Caucasus Region

Our objective is to improve the view of the seismicity in the Caucasus region using instrumental data between 1951 and 2019. To create a comprehensive catalog, we combine the bulletins of local agencies and the International Seismological Centre, and use an advanced single-event location algorithm, iLoc, to obtain better locations. We show that relocations with iLoc, using travel-time predictions from the 3D upper mantle velocity model, Regional Seismic Travel Time, improve the locations. Then, using the iLoc results as initial locations and the ground-truth events identified in the iLoc results as fix points, we apply Bayesloc, a multiple-event location algorithm, to simultaneously relocate the entire seismicity of the Caucasus region. Here we demonstrate that the simultaneous relocation of the seismicity with Bayesloc clarifies the location and geometry of major active structures accommodating ongoing convergence between the Arabian and Eurasian continents between the Black and Caspian Seas. Among our major findings is the confirmation of widespread seismicity in the mantle beneath the northern flank of the Greater Caucasus and central Caspian, resulting from north-dipping subduction of the Kura and South Caspian basins and the identification of a discrete band of crustal seismicity beneath the southern flank of the Greater Caucasus.

58 GEOSCIENCES↗
DOE OSTI2024

Relocation of the 8 September 2023 High Atlas, Morocco, Earthquake Aftershock Sequence

The earthquake that occurred on 8 September 2023, with a magnitude of 6.8, was the most destructive earthquake event in Morocco in the past decade. This earthquake took place in the Al Haouz region, located in the western part of the High Atlas Mountain range. To better understand what caused and triggered this earthquake, the earthquake catalogs including P and S arrival times were collected from the Moroccan seismic network and combined with regional data from the International Seismological Centre. The mainshock and aftershocks were relocated by using iLoc, a state-of-the-art single-event location algorithm, and then by the multiple event location double-difference algorithm, hypoDD. The improved earthquake relocations using iLoc and the double-difference methods provide sharper lineation of seismicity and agree well with tomographic images of the earthquake zone. Finally, the seismicity distribution and the focal mechanism of the mainshock indicate that the earthquake sequence has occurred along the South Atlas fault system.

58 GEOSCIENCES↗
DOE OSTI2025

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗
DOE OSTI2024

A rapid, pulsed laser testing approach for single event latch-up screening in microelectronics

A pulsed laser testing system for rapid screening of single-event latch-up (SEL) in microelectronics with real-time visualization of sensitive nodes via photo-emission is presented. We provide a detailed overview of the system, followed by SEL threshold measurements in an analog-to-digital converter (AD9240). We find that SEL thresholds are comparable to measurements taken with a low-repetition rate, fixed beam system, and demonstrate full-die scanning speeds can be an order of magnitude faster

Andrus, Liam Padraic↗