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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Total Effective Dose from Radiologic Emissions from INL Facilities for Calculation of Population Dose for the INL 2024 Annual Site Environmental Report

Total effective radiation dose from airborne releases was calculated using air dispersion modeling performed by the National Oceanic and Atmospheric Administration (NOAA) Idaho Falls Office using their HYSPLIT computer model (Stein et al. 2015; Draxler et al. 2013), and the Dose Multi-Media (DOSEMM) dose assessment model (Rood 2019) . The objective of these calculations was to provide a grid of total effective dose across a model domain that encompasses a 50-mile (80-km) radius from any Idaho National Laboratory (INL) Site source. In addition to INL Site sources, releases from the Radiological and Environmental Sciences Laboratory (RESL) (IF-683) and IF-603 located at the INL Research Center (IRC) within the Idaho Falls city limits were also included. Due to tracking limitations, radionuclides released from IF-611 and IF-603 are modeled as released from IF-603. The dose results will be combined with GIS software to compute a total population dose for the calendar year (CY) 2024 and will be reported in the INL Annual Site Environmental Report (ASER). This report does not cover the population dose calculation and only documents generation of the gridded dose file.

42 - ENGINEERING↗
NASA NTRS2012

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

linear integrated circuits↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗
NASA NTRS2009

Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

Buchner, S.↗
NASA NTRS2008

Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Buchner, Stephen↗
NASA NTRS1984

Total dose effects in the 54HC family of microcircuits

Motorola and National Semiconductor 54HC00 and 54HC74 microcircuits were evaluated using CO-60 to determine their total dose radiation hardness. The devices were found to be radiation soft failing parametrically between 5 and 10 K rads and functionally between 20 and 40 K rads. The failures were bias dependent, relatively insensitive to dose rate, and only annealed moderately when left unbiased at room temperature.

Ropiak, S.↗
NASA NTRS2007

Total Dose Effects on Error Rates in Linear Bipolar Systems

The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect SET system error rates in a radiation environment. If the transients are broadened by TID, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.

Buchner, Stephen↗
NASA NTRS1989

Total dose effect on soft error rate for dynamic metal-oxide-semiconductor memory cells

A simple model for the soft error rate for dynamic metal-oxide-semiconductor random access memories due to normal galactic radiation was devised and then used to calculate the rate of decrease of the single-event-upset rate with total radiation dose. The computation shows that the decrease in the soft error rate is less than 10 percent per day if the shielding is 0.5 g/sq cm and the spacecraft is in a geosynchronous orbit. The decrease is considerably less in a polar orbiting device.

Benumof, Reuben↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

Judicious choice of radiation dose and parameter change acceptance criteria, absence of anomalous anneal phenomena, and absence of anomalous reirradiation effects are recognized as essential for a successful irradiation-anneal (IRAN) screening procedure to ensure that no device will fall, upon reirradiation, above parametric limits assigned for the worst case application. Reirradiation and irradiation-anneal behavior of various semiconductor devices are compared and those that do not lend themselves to IRAN screening are singled out. Information needed to judge the suitability of an IRAN type screening program is detailed. Reasons for success of the limited IRAN screening of flight parts for the Mariner Jupiter/Saturn (MJS '77) spacecraft are indicated.

Stanley, A. G.↗
NASA NTRS1992

Total Dose Effects (TDE) of heavy ionizing radiation in fungus spores and plant seeds: Preliminary investigations

The opportunity to compare cosmic radiation effects caused during long and short duration exposure flights in biological objects are limited until now, and data obtained so far are very rare and insufficient. Because of the very long exposure of the experiment during the Long Duration Exposure Facility (LDEF) mission (approximately 2000 days) structural changes of the hardware material can be expected which will influence its biocompatibility and, thus, will interact with the radiobiological effects. The aim of the experiment flown on LDEF was a detailed investigation of biological effects caused by cosmic radiation especially of particles of high atomic number Z and high energy. The flight hardware consisted of standard BIOSTACK containers; in these containers a special sandwich construction consisted of visual plastic detectors with seed rsp. spore layers interlocked.

Kranz, A. R.↗
NASA NTRS1996

Total Dose Effects and Hardness Assurance for Optocouplers

The operation and efficiency of optocouplers depend on a number of different factors, and the way that these factors are degraded by radiation must be properly understood in order to apply these devices in space systems.

optocouplers optocoupler efficiency LED degradatio↗
NASA NTRS1994

Total Dose Effects in Conventional Bipolar Transistors

This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.

Bipolar Devices Cassini Ionizing radiation effects↗
NASA NTRS2006

Space Environment Effects on Materials : An Overview

A general overview on the space environment and its effects on materials is presented. The topics include: 1) Impact of Space Effects on Spacecraft Costs; 2) Space Environment Effects on Spacecraft by Source; 3) Primary Source of Space Effects: The Sun; 4) The Earth's Environment; 5) Trapped Radiation Belts; 6) Aurora Are Everywhere; 7) Spacecraft Interactions; 8) Atmospheric Effects; 9) Contaminant Effects on Materials; 10) Meteoroid/Debris Effects on Materials; 11) Spacecraft Surface Charging; 12) Surface Discharge Effects; 13) Internal Electrostatic Discharge--Satellite Killer; 14) Plasma Interactions DS-1 Ion Engines; 15) Radiation Effects on Spacecraft Systems and Materials; 16) Total Ionizing Dose Effects Total Ionizing Dose Effects; 17) Man-Made Sources of Space Effects Man-Made Sources of Space Effects; and 18) Space Environments Versus Interactions.

charged particles↗
NASA NTRS1998

Total Ionizing Dose Effects on Voltage-to-Frequency Converters

This paper discusses total dose effects on voltage-to-frequency converters which impose different requirements on internal circuitry, and are also very high-precision devices (for example, linearity is typically specified between 0.002 and 0.05%).

low dose rate (LDR) Voltage-to-Frequency Converter↗
NASA NTRS1980

A review of dose rate dependent effects of total ionizing dose /TID/ irradiations

The basic effects of ionizing radiation are summarized. The problem of the existence of a true dose rate effect is examined. Consideration is given to the nature of long term annealing, which is sometimes manifested as an 'apparent' dose rate effect. Both analytical and experimental work is considered and the results are related to practical testing requirements.

Nichols, D. K.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 2

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Price, W. E.↗