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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The purpose of this presentation is to discuss the COTS performance, clock upset / single event transient, device configuration upset, antifuse hardening, heavy ion SEU, total dose, proton sensitivities, latchup, and additional information and data.
- High energy radiation environments responsible for radiation damage to thick materials are well characterized and modeled: - Galactic cosmic rays — Badhwar-O’Neil 2020, CREME96, Nymmik - Solar particle events — Emission of Solar Protons, SAPPHIRE, JPL, King 1972 - Trapped radiation belts — AE8/AP8, AE9/AP9/IRENE - Low energy radiation environments responsible for radiation damage to thin materials relevant to Lagrange points and interplanetary missions have not been treated as comprehensively to date: - Solar wind - Magnetosheath - Magnetotail - Concern to spacecraft design and operations is radiation damage to surfaces and thin materials with mission critical applications on exterior of spacecraft - Applications: thermal control coatings, sunshields, multilayer insulation, optical thin film coatings, solar sails, thermo-optical properties of space exposed materials - Damage processes: radiation degradation (total dose), light ion sputtering, proton blistering of soft metals, modification of optical properties (α/ε), modification of charging properties (SEY, surface conductivity)
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The mechanism by which Na is removed from the surface of Io prior to its injection into the plasma torus is investigated experimentally. Na2S films of thickness 3-8 microns were produced by spray coating an Ni substrate in a dry N2 atmosphere and subjected to sputtering by 34-keV Ar(+), Ne(+), Kr(+), or Xe(+) ions up to total doses of about 5 x 10 to the 18th ions/sq cm. The sputtering yields and mass spectra are found to be consistent with ejection of only small amounts of atomic Na and somewhat larger amounts of Na-containing molecules. It is concluded that the amount of Na ejected by magnetospheric-ion sputtering of Na2S would be insufficient to account for the amounts observed in the Io neutral cloud. A scenario involving sputtering of larger polysulfide molecules is considered.
The purpose of these tests was to characterize the susceptibility of the LSK389 and LSK489 Dual N-Channel JFET from Linear Systems to Single-Event Latchup due to heavy ions and to Total Ionizing Dose (TID) degradation at -65 °C and intermediate dose rate. The test was carried out to assess suitability of the amplifiers for the Ocean Color instrument (OCI) on the Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) spacecraft.
The long-term effects on specific animal tissues of exposure to heavy ion irradiation are studied in experiments on cataractogenesis in mice and rabbits. Five groups of rabbits at ages from 8 weeks to 5.3 years were irradiated to a dose of 9.0 Gy of Bragg plateau Ne-20 ions, while mice were exposed to single and total fractionated doses of 4.17 Gy gamma rays or 0.40 to 1.20 Gy of C-12, Ne-20 or Ar-40 particles. Measurements of lens opacities over time show that in the year since irradiation, cataractogenesis is delayed and less severe in rabbits irradiated at age 6 months compared to younger animals, although it is possible that the late effects in adults will surpass those found in the young. The fractionation of the total dose of gamma rays in mice is observed to lead to a marked reduction in the extent of lens opacity after one year, while fractionated heavy ion doses caused a greater degree of posterior lens opacification. Evaluations of the effects of the LET of different ions on cataractogenesis are consistent with RBEs of about 5, 3 and 1-2 for Ar-40, Ne-20 and C-12 ions, respectively. Results thus support the Casarett model of radiation damaging stem cell populations that are not necessarily part of the vasculature.
This column will be provided each quarter as a source for reliability, radiation results, NASA capabilities, and other information on programmable logic devices and related applications. This quarter's column will include some announcements and some recent radiation test results and evaluations of interest. Specifically, the following topics will be covered: the Military and Aerospace Applications of Programmable Devices and Technologies Conference to be held at GSFC in September, 1998, proton test results, heavy ion test results, and some total dose results.
Because activities in space necessarily involve chronic exposure to a heterogeneous charged particle radiation field it is important to assess the influence of dose-rate and the possible modulating role of heavy particle fragmentation on biological systems. Using the well-studied cataract model, mice were exposed to plateau 600 MeV/amu Fe-56 ions either as acute or fractionated exposures at total doses of 5-504 cGy. Additional groups of mice received 20, 360 and 504 cGy behind 50 mm of polyethylene, which simulates body shielding. The reference radiation consisted of Co-60 gamma radiation. The animals were examined by slit lamp biomicroscopy over their three year life spans. In accordance with our previous observations with heavy particles, the cataractogenic potential of the 600 MeV/amu Fe-56 ions was greater than for low-Linear Energy Transfer (LET) radiation and increased with decreasing dose relative to gamma rays. Fractionation of a given dose of Fe-56 ions did not reduce the cataractogenicity of the radiation compared to the acute regimen. Fragmentation of the beam in the polyethylene did not alter the cataractotoxicity of the ions, either when administered singly or in fractions.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, total ionizing dose and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.
The physical interactions of high-energy space radiations with bulk matter are described with particular emphasis on the nuclear and electromagnetic interactions of solar and galactic cosmic rays. Methods of incorporating these interactions into radiation transport models which accurately describe the propagation of the incident cosmic rays and their subsequent-generation reaction products are also explained. Representative results for solar and galactic cosmic ray doses and dose equivalents are presented for various aluminum and water absorber depths. For the first time, the main contributions to human exposure in space from galactic cosmic rays will be presented on a component by component basis, including a breakdown of the dose-equivalent contributions into primary ions, heavy fragments, alpha particles, neutrons, and protons. For the galactic cosmic ray environment outside of the earth's magnetosphere, over 70 percent of the total dose equivalent results from only seven nuclear species (hydrogen, helium, carbon, oxygen, silicon, magnesium, and iron ions). Of these, the largest single contributor is cosmic ray iron and its secondaries, which account for nearly one-fourth of the unshielded total dose equivalent during solar minimum.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.
This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10(exp -l2) errors/bit-day, for the Adams Ten Percent Worst Case Environment.
This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.
We present a compendium of optocoupler radiation test data including neutron, proton and heavy ion Displacement Damage (DD), Single Event Transients (SET) and Total Ionizing Dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.
This invited presentation describes demonstration of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. SiC junction field effect transistor-resistor (JFET-R) ICs with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient [1], 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber [2], and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes [3]. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C T-span) without significant change in signal (input /output) or power supply voltages [4]. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards this end, the processing that forms the SiC JFETs and resistors (without interconnect) for the NASA Glenn “Generation 12” design prototype JFET-R ICs was conducted at GE Research. Once the COVID-delayed IC interconnect and bond pad fabrication processing on these wafers is completed at NASA Glenn, the resulting chips will be packaged and oven-tested [5]. It is expected that further technology transfer to complete commercial production will lower investment and risk barriers to useful application deployment. For NASA, an initial high-value deployment is opening the Venus surface to extended missions for robotic scientific exploration.