Engineering topics
Cheng, L. J.
Publications and source records attributed to Cheng, L. J..
MECA Electrometer: Initial Calibration Experiments
The Mars '01 lander contains an electrometer designed to evaluate the electrostatic nature of the Martian regolith (soil) and atmosphere. The objective is to gain a better understanding of the hazards related to the human exploration of Mars.
MECA Electrometer: Overview
The Mars '01 lander contains an electrometer designed to evaluate the electrostatic nature of the Martian regolith and atmosphere. The objective is to gain a better understanding of the hazards related to the human exploration of Mars.
Characterization of Semiconductor Materials Using AOTF Instruments
A non-invasive characterization of silicon-on-insulator (SOI) wafers using white light interference measured by an AOTF polarimetric hyperspectral imaging instrument will be presented an an illustration of the technology potential. Experiments provided high resolution thickness maps of both silicon and oxide layers with accuracy and observed optically active imperfections and distributions in the structure.
Test Structures for Rapid Prototyping of Gas and Pressure Sensors
A multi-project ceramic substrate was used in developing a gas sensor and pressure sensor. The ceramic substrate cantained 36 chips with six variants including sensors, process control monitors, and an interconnect ship. Tha gas sensor is being developed as an air quality monitor and the pressure gauge as a barometer.
Self-pumped and double phase conjugation in GaAs with applied dc electric field
Self-pumped and double phase conjugation are first demonstrated in undoped GaAs with applied dc electric field at 1.06 micron wavelength. Phase-conjugate reflectivities of up to 3 percent and 0.5 percent, respectively, are obtained and other dependences are reported. Reported values of the self-pumped phase-conjugate reflectivity are compared with those of InP.
Micromachined silicon periodic structures for millimeter- and submillimeter-wave applications
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Photorefractive effects in GaAs
Photorefractive GaAs is a potential optical processing material with the capability of integration with optoelectronic and electronic devices. Recent results on photorefractive properties of liquid encapsulated Czochralski (LEC)-grown, undoped, semiinsulating GaAs crystals are presented.
Tailorable Infrared Sensing Devices
Alternating layers of GexSi1.x and Si deposited by molecular beam epitaxy. When electric field applied across stack, acts as detector for infrared photons. Device fabricated on silicon substrate together with sophisticated very-large-scale integrated circuitry. Useful for wide range of applications related to robotics, space exploration, and terrestrial surveillance.
Floating-Emitter Solar-Cell Transistor
Conceptual transistor embedded in photovoltaic diode promises to increase efficiency to more than 20 percent. Solar-cell transistor has front-surface contact, rear contact, and floating emitter. Variety of other contact and junction configurations possible, but do not offer ease of fabrication in combination with high performance.
Defect characterization of silicon dendritic web ribbons
Progress made in the study of defect characterization of silicon dendritic web ribbon is presented. Chemical etching is used combined with optical microscopy, as well as the electron beam induced current (EBIC) technique. Thermal annealing effect on carrier lifetime is examined.
Structural defect characterization of silicon dendritic web ribbons
An EBIC study of the cross section of silicon dendritic web ribbon has revealed that recombination-active structural defects are mainly concentrated in the inner part of the ribbon, particularly at and near the twin plane, whereas the material near the surface has significantly fewer defects. An analysis of the distribution of etch pits due to slip dislocations created by shear stress indicates that a minimum in the dislocation density is frequently observed in the ribbon adjacent to the dendrite.
Characterization of CdS/CdTe and CdS/CuInSe2 thin film solar cells
A study on low cost polycrystalline thin film CdS/CdTe and CdS/CuInSe2 solar cells using measurements of spectral response and capacitance-voltage-frequency relationships was performed. Because of high concentrations of localized levels in the energy gap existing in materials and at interfaces, the redistribution of charge among the levels due to illumination plays an important role in the collection of light-generated current in these cells. The results illustrate some related phenomena observed in these cells.
Plastic deformation of silicon dendritic web ribbons during the growth
The distribution of slip dislocations in silicon dendritic web ribbons due to plastic deformation during the cooling phase of the growth was studied. The results show the existence of two distinguishable stress regions across the ribbon formed during the plastic deformation stage, namely, shear stress at the ribbon edges and tensile stress at the middle. In addition, slip dislocations caused by shear stress near the edges appear to originate at the twin plane.
Recombination-active defects in silicon ribbon and polycrystalline solar cells
This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.
Characterization of grain boundaries in silicon
Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented.
Enhanced diffusion of phosphorus at grain boundaries
Enhanced diffusion of phosphorus at grain boundaries in cast polycrystalline photovoltaic materials (Wacker, HEM, and Semix) was studied. It was found that the enhancements for the three materials were the same, indicating that the properties of boundaries are similar, even though they were grown by different techniques. In addition, it was observed that grain boundaries capable of enhancing the diffusion always have strong recombination activities. Both phenomena could be related to dangling bonds existing at the boundaries. The present study gives the first evidence that incoherent second order twins of 111/115-plane type are diffusion-active.
Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam
The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.