Engineering topics
Publications and source records attributed to Irom, F..
This guideline is written to help facilitate adoption of COTS components by space flight projects by elucidating the radiation effects that various types of components are susceptible to, by describing potential mitigations, and by recommending component selection strategies that minimize radiation risks.
A recent model provides risk estimates for the deprogramming, of initially programmed floating gates, via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.
No abstract available
Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.
Single-event upset from heavy ions in measured for advanced commercial microprocessors, comparing upset sensitivity in registers and d-cache for several generations of devices. Multiple-bit upsets and asymmetry in registers upset cross sections are also discussed.
Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. Multiple-bit upsets (MBU) in registers and were measured and compared with single-bit upsets. Also, the scaling of the cross section with reduction of feature size for SOI microprocessors was discussed.
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Single-event transients are produced in linearintegrated circuits when they are exposed to heavy ions or protons, and those transients can be a significant problem for electronic circuits in spacecraft.
Proton and heavy-ion single-event upset susceptibility has been measured for the MotorolaPowerPC7400. The results show that this advanced device has low upset susceptibility, despite the scaling and design advances.
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This paper outlines several testing issues posed by novel memories and approaches to testing for radiation and reliability effects.
In this paper we report results of single-event tests of the PowerPC750 from Motorola and IBM, which are identical designs which are manufactured with advanced processes that uses a minimum feature size of 0.29 and 0.28 mu m, respectively.