Engineering topics
Publications and source records attributed to Ladbury, Ray L..
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.
Sensitivity of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is presented. Devices tested include digital, linear, and hybrid devices.
Sensitivity of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.
Vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACS), among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, total ionizing dose and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates (0.003-0.33 Rads(Si)/s). Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog to Digital Converters (ADCs), Digital to Analog Converters (DACs), and DC-DC converters, among others.
Radiation effects in photonic and microelectronic components can impact the performance of high-speed digital optical data link in a variety of ways. This segment of the short course focuses on radiation effects in digital optical data links operating in the MHz to GHz regime. (Some of the information is applicable to frequencies above and below this regime) The three basic component level effects that should be considered are Total Ionizing Dose (TID), Displacement Damage Dose (DDD) and Single Event Effects (SEE). In some cases the system performance degradation can be quantified from component level tests, while in others a more holistic characterization approach must be taken. In Section 2.0 of this segment of the Short Course we will give a brief overview of the space radiation environment follow by a summary of the basic space radiation effects important for microelectronics and photonics listed above. The last part of this section will give an example of a typical mission radiation environment requirements. Section 3.0 gives an overview of intra-satellite digital optical data link systems. It contains a discussion of the digital optical data link and it's components. Also, we discuss some of the important system performance metrics that are impacted by radiation effects degradation of optical and optoelectronic component performance. Section 4.0 discusses radiation effects in optical and optoelectronic components. While each component effect will be discussed, the focus of this section is on degradation of passive optical components and SEE in photodiodes (other mechanisms are covered in segment II of this short course entitled "Photonic Devices with Complex and Multiple Failure Modes"). Section 5.0 will focus on optical data link system response to the space radiation environment. System level SEE ground testing will be discussed. Then we give a discussion of system level assessment of data link performance when operating in the space radiation environment.