Engineering topics
Publications and source records attributed to Marsh, O. J..
N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.
Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.
Ion-implanted GaAs junction diodes anneal behavior and defect nature
Ion implantation forming of conducting layers and p-n junctions in gallium arsenide and silicon carbide
N-type layer formation with ion implanted nitrogen or Sb in p-type alpha-SiC, evaluating electrical characteristics, discussing junction devices formed
Ion implantation techniques for p-n junction diodes of silicon carbide and gallium arsenide
Deep trapping levels caused by ion implantation doping, discussing level effects on electrical characteristics of zinc implanted GaAs diodes
Ion implantation process for fabricating active devices in high bandgap semiconductor materials for high temperature operation
Ion implementation for microelectronics
Electrically active centers distribution in Zn and Te implantations into GaAs