Measurement and analysis of pixel geometric and diffusion modulation transfer function components in photodiode active pixel sensors
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measurement analysis diffusion modulation transfer↗
Engineering topics
Shima, R.
Publications and source records attributed to Shima, R..
The effect of growth rate, diameter and impurity concentration on structure in Czochralski silicon crystal growth
It is demonstrated that maximum growth rates of up to 80% of the theoretical limit can be attained in Czochralski-grown silicon crystals while maintaining single crystal structure. Attaining the other 20% increase is dependent on design changes in the grower, to reduce the temperature gradient in the liquid while increasing the gradient in the solid. The conclusions of Hopkins et al. (1977) on the effect of diameter on the breakdown of structure at fast growth rates are substantiated. Copper was utilized as the test impurity. At large diameters (greater than 7.5 cm), concentrations of greater than 1 ppm copper were attained in the solid (45,000 ppm in the liquid) without breakdown at maximum growth speeds. For smaller diameter crystals, the sensitivity of impurities is much more apparent. For solar cell applications, impurities will limit cell performance before they cause crystal breakdown for fast growth rates of large diameter crystals.
Digges, T. G., Jr.↗
Interaction of metal layers with polycrystalline Si
Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.
Nakamura, K.↗
Improved multiple-target sputtering equipment
Sputtering chamber has been developed with multiple target. Several film layers can be deposited without repeated evacuation and refilling. Contamination through exposure to air is eliminated.
Shima, R.↗
Multitarget sequential sputtering apparatus
The development and characteristics of a sputtering apparatus are discussed. A potential difference is applied between the cathode and anode to produce a plasma for each target which is sputtered by accelerated ions within the plasma. The process of sputtering for various materials is described. Diagrams of the unit are provided.
Shima, R.↗
Studies on the Al2O3-Ti-Mo-Au metallization system
The behavior of Ti-Mo-Au metallization on Al2O3 and C has been investigated by backscattering spectrometry. Results show that Mo-Au bimetal films typically mix during deposition. Diffusion of Ti in Mo film occurs at 600 C, but is inhibited by the presence of oxygen in the Ti film. Even 1000 A of Mo is not a barrier against interdiffusion of Ti and Au during 20-min anneals at 600 C. The amount of mixing observed also depends on the nature of the substrate which supports the Ti-Mo-Au metallization.
Harris, J. M.↗