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Ted Wilcox

Publications and source records attributed to Ted Wilcox.

At least 19 records

The NASA Radiation Hardness Assurance (RHA) Process Standard

This paper presents status on the upcoming NASA Agency-level RHA Process Standard. Based on recommendations provided by the NASA Engineering and Safety Center (NESC), the NASA Electronic Parts and Packaging (NEPP) Program has led development of an agency-level standard for space flight avionics and electronics RHA. The standard introduces a novel RHA taxonomy and prescribes the process required by NASA programs and projects to baseline their RHA programs consistent with the MEAL (Mission, Environment, Application, and Lifetime) criteria including the risk tolerance posture. The standard also provides requirements for the RHA schedule integration in the program or project lifecycle and requirements for data deliverables content. Additional non-prescriptive technical content is provided in the standard appendices to guide development of RHA programs for NASA missions.

Avionics↗

Non-Volatile Memory Radiation Update

This work provides a current update of radiation testing activities on non-volatile memories in support of the NEPP program. Single-event effects data from heavy-ion testing is highlighted on two off-the-shelf high-speed memory modules.

Flash↗

Single-Event Effect Test Report Texas Instruments DS25BR100 LVDS Buffer

This study was to determine the destructive single-event effect (SEE) susceptibility of the DS25BR100 series Low-Voltage Differential Signaling (LVDS) Buffers with Pre-emphasis and Equalization (DS25BR100, 110, and 120). The device was monitored primarily for destructive events while exposing it to a heavy ion beam at the Texas A&M University’s (TAMU) K500 Cyclotron.

Ted Wilcox↗

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗

Update on Wide Bandgap (WBG) Device Radiation Hardness Assurance

This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.

wide bandgap↗

Avalanche ASV016204 (Pre-Production Samples) 40nm MRAM Total Ionizing Dose Test Report

The purpose of this test was to characterize the Avalanche Technology ASV016204’s total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device functionality (in terms of memory cell upsets and read/write ability) as well as power supply currents during various modes of operations were recorded.

Total Ionizing Dose (TID)↗

Vorago RH-OBC-1 Single Event Effect Characterization Test Report

The Vorago Technologies RH-OBC-1 is a CubeSat Kit Bus compatible single board computer with a Vorago VA10820 ARM Cortex-M0 microcontroller at its core. The board also includes a set of common peripheral integrated circuits, like voltage regulators, non-volatile memories (NVM), an analog-to-digital converter (ADC), a watchdog/supervisor, and a Controller Area Network (CAN) bus transceiver. High-energy proton (200 MeV) testing was conducted at both board and component levels to investigate single-event effects.

CubeSat compatible board↗

Heavy Ion Test Results of the Vishay DG403DY-E3 Analog Switch

This study was undertaken to determine the Single Event Latchup (SEL) susceptibility of the Vishay DG403DY-E3 (Analog Switch). The device was under a biased and switching configuration during irradiation and continuously monitored for destructive events. The parts were tested at the Lawrence Berkeley National Laboratory 88 inch cyclotron facility

Single Event Latchup (SEL)↗