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DOE OSTI · 1330708

Methods for dry etching semiconductor devices

Abstract

The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

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BibTeXRIS

Bauer, Todd, Gross, Andrew John, Clews, Peggy J., Olsson, Roy H.. 2016-11-01. Methods for dry etching semiconductor devices. https://www.osti.gov/biblio/1330708

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36 MATERIALS SCIENCE↗