High Density Chip Interconnect Technology Using High Density Glass Interposers

Abstract

Demands for high density and high speed interconnect solutions are not satisfied by current technology offerings. Platforms such as printed circuit boards (PCBs), ceramic substrates and silicon interposers don’t provide the small form factor nor the I/O density to support 5G or 1Tbps gigabit ethernet solutions. Current solutions also don’t support die to die assembly with integrated tiled solutions for wide area and fanout solutions for lager data and signal processing. A solution with through vias provides an order of magnitude or smaller density supporting much higher density attach and assembly By fabricating a very fine pitch metal filled through glass via solution it’s possible to deliver the necessary improvements in performance, reliability, even higher data speed rates with smaller area and much denser geometries. There are a number of opportunities across a wide variety of industries for through glass interposers as they become the replacement for printed circuit boards (PCBs) and ceramic substrates. The broad array of opportunities include renewable energy, medical electronics (ME), defense electronics (DE)/space and consumer electronics (CE), but likely will impact every industry and market segment. Compared to PCBs, through glass via (TGV) solutions provide the next generation platform for semiconductor assembly improvements. The ability to generate lines, spaces, trenches and vias similar to wafer level geometries delivers wired solutions one to two orders of magnitude smaller than traditional organic PCB and ceramic substrate offerings. Higher density connections also include the thru vias that connect multiple metal layers, fanout. It’s possible to deliver filled metal vias that are 20um diameter with much tighter pitch than can be offered with PCB. Our goal is to provide 20um diameter and smaller via, 50um and smaller pitch, and aspect ratios at 25:1 and greater with hermetically metal filled vias. The goal of CVI is to replace or eliminate PCBs, ceramic substrate and through silicon vias (TSV) providing a glass interposer with metal filled, fiber plugged and/or optional wireless interconnectivity. The end plan is to deliver a glass substrate platform that provides improved electrical performance, versatility, inertness, and much improved cost and cycle time (development, drawing, and delivery) to performance in the form of small millimeter sized substrates or full 8” wafer substrates. Glass delivers an improvement over silicon thru vias (TSV) in the number of processing steps, cost, reliability and cycle time. In addition to metal plugged vias, our glass interposers are capable of fiber and antennae solutions providing two additional very high density and ultra-high speed data transfer capabilities.