A quantitative structural characterisation of active semiconducting materials (mSi; SiO[subscript 2]; Al[subscript 2]O[subscript 3]; TiO[subscript 2]) for use in printed electronics using a combination of Small Angle Light Scattering (SALS) and Ultra Small Angle X-ray Scattering (USAXS)

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Setshedi, Rhyme, Zambou, Serges, Jonah, Emmanuel O., Magunje, Batsirai, Unuigbe, David M., Britton, David T., Harting, Margit, Sone, Michael Ekonde. 2020-11-13. A quantitative structural characterisation of active semiconducting materials (mSi; SiO[subscript 2]; Al[subscript 2]O[subscript 3]; TiO[subscript 2]) for use in printed electronics using a combination of Small Angle Light Scattering (SALS) and Ultra Small Angle X-ray Scattering (USAXS). https://doi.org/10.1088/1361-6528%2Fabac7b

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