DOE OSTI · 1870280
Rapid Ge Diffusion along Si/SiO2 Interfaces during High Temperature Oxidation for Quantum-Scale Structures.
Abstract
Abstract not provided.
Keep this discovery
Explore connections, maps & timelines
Thornton, Chappel Sharrock, Hicks, Benjamin, Turner, Emily, Wang, George T., Law, Mark, Jones, Kevin S.. 2021-05-01. Rapid Ge Diffusion along Si/SiO2 Interfaces during High Temperature Oxidation for Quantum-Scale Structures.. https://doi.org/10.2172/1870280
Cite the original work for its findings. Save a collection to share your selection of sources.