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DOE OSTI · 1873517

Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition

Liu, Tzu-Ling·Zeng, Li·Nardi, Katie L.·Hausmann, Dennis M.·Bent, Stacey F.
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Abstract

In order to enable area-selective atomic layer deposition (AS-ALD), self-assembled monolayers (SAMs) have been used as the surface inhibitor to block a variety of ALD processes. The integrity of the SAM throughout the ALD process is critical to AS-ALD. Despite the demonstrated effectiveness of inhibition by SAMs, nucleation during ALD eventually occurs on SAM-protected surfaces, but its impact on SAM structures is still not fully understood. In this study, we chose the octadecyltrichlorosilane (ODTS) SAM as a model system to investigate the evolution of crystallinity and structure of SAMs before and after ALD. The breakdown behavior of SAMs when exposed to ZnO and Al 2 O 3 ALD was systematically studied by combining synchrotron X-ray techniques and electron microscopy. We show that the crystallinity and structure of ODTS SAMs grown on Si substrates remain intact until a significant amount of material deposition takes place. In addition, the undesired ALD materials that grow on ODTS SAMs present contrasting morphologies: dispersed nanoparticles for ZnO while relatively continuous film for Al 2 O 3 . Lastly, substrate dependency was explored by comparing a Si substrate to single-crystal sapphire. Similar results in the evolution of SAM crystallinity and formation of ALD nuclei on top of SAM are observed in the ODTS–sapphire system. This study provides an in-depth view of the influence of ALD processes on the SAM structure and the nucleation behavior of ALD on SAM-protected surfaces.

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Liu, Tzu-Ling, Zeng, Li, Nardi, Katie L., Hausmann, Dennis M., Bent, Stacey F.. 2021-09-22. Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition. https://doi.org/10.1021/acs.langmuir.1c02211

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