DOE OSTI · 2293930
Patterned nanochannel sacrificial layer for semiconductor substrate reuse
Abstract
Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.
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Mangum, John Stanley, McMahon, William Edwin, Warren, Emily Lowell, Theingi, San. 2023-11-28. Patterned nanochannel sacrificial layer for semiconductor substrate reuse. https://www.osti.gov/biblio/2293930
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