DOE OSTI · 2579835
GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications
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Fu, Kai (ORCID:0000000294057512), Luo, Shisong (ORCID:0000000151420935), Fu, Houqiang (ORCID:0000000211258328), Hatch, Kevin, Alugubelli, Shanthan, Liu, Hanxiao (ORCID:0000000331067542), Li, Tao (ORCID:0000000309161743), Xu, Mingfei (ORCID:0000000217171290), Mei, Zhaobo, He, Ziyi (ORCID:0000000338336426), Zhou, Jingan (ORCID:0000000270577783), Chang, Cheng (ORCID:0000000206770677), Ponce, Fernando (ORCID:0000000212759386), Nemanich, Robert (ORCID:0000000335768178), Zhao, Yuji (ORCID:0000000191994159). 2024-03-01. GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications. https://doi.org/10.1109/ted.2023.3321562
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