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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

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NASA NTRS2013

Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

ionizing radiation↗

NASA NTRSDate not supplied

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementationof durable 500 deg.C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018± 4 x 1018cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.

RF SiC↗

NASA NTRS2023

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs) . Specifically, p -type ohmic contacts have been demonstrated on a 0.25 μm-thick p -type homoepitaxial layer of doping 8 x 10 18 ± 4 x 10 18 cm -3 . Preliminary current-voltage characteristics of fabricated BJTs are presented.

4H-SiC BJT↗

NASA NTRS2011

Modeling the effects of hydrogen and dose rate sensitivity in CMOS and bipolar technologies

Low dose rate (LDR) and high dose rate (HDR) experiments on field-oxide-field-effect-transistors (FOXFETs) and gated lateral pnp (GLPNP) bipolar transistors indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. This EF is also affect by the presence of hydrogen in the oxide. In this work, we developed a one dimensional (1-D) numerical calculations code to investigate the key mechanisms that describe the dose rate sensitivity and the effect of hydrogen on dose rate effects. We used a finite-difference methodology for the numerical calculations that allow for computing solutions for the densities of the mobile species as well as for the electrostatic potential at nodes contained within a mesh superimposed on the solution domain. Results from calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. In addition, calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar and CMOS devices results in good agreement with the dose rate calculations of interface trap buildup

Barnaby, Hugh↗

NASA NTRS1980

Research on design feasibility of high-power light-weight dc-to-dc converters for space power application

The development of 5 kW converters with 100 kHz switching frequencies, consisting of two submodules each capable of 2.5 kW of output power, is discussed. Two semiconductor advances allowed increased power levels. Field effect transistors with ratings of 11 A and 400 V were operated in parallel to provide a converter output power of approximately 2000 W. Secondly, bipolar power switching transistor was operated in conjunction with a turn-off snubber circuit to provide converter output power levels approaching 1000 W. The interrelationships between mass, switching frequency, and efficiency were investigated. Converters were constructed for operation at a maximum output power level of 200 W, and a comparison was made for operation under similar input/output conditions for conversion frequencies of 20 kilohertz and 100 kilohertz. The effects of nondissipative turn-off snubber circuitry were also examined. Finally, a computerized instrumentation system allowing the measurement of pertinent converter operating conditions as well as the recording of converter waveforms is described.

Wilson, T. G.↗

NASA NTRS1979

A dc model for power switching transistors suitable for computer-aided design and analysis

A model for bipolar junction power switching transistors whose parameters can be readily obtained by the circuit design engineer, and which can be conveniently incorporated into standard computer-based circuit analysis programs is presented. This formulation results from measurements which may be made with standard laboratory equipment. Measurement procedures, as well as a comparison between actual and computed results, are presented.

Wilson, P. M.↗

NASA NTRS1980

Semiconductor step-stress testing

Report describes extensive program to test behavior of discrete diodes and transistors subjected to power and temperature overstress. Commercially available bipolar and field effect transistors and diodes were stressed between 0.5 and 1.75 times maximum rated power. Two groups were temperature stressed: 160 hour steps starting at 75 C to maximum of 300 C. Cumulative failures and changes in device parameters were monitored and reasons for failures presented.

Source record↗

NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗

NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p(+)-n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p(+)-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(s)) as a function of initial ON-state forward current (I(F)) and OFF-state reverse current (I(R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(p)) calculated from plots of t(s) vs I(R)/I(F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/tau(p) as a function of device perimeter-to- area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 sq mm. The bulk minority carrier (hole) lifetime extracted from the 1/tau(p) vs P/A plot is approximately 0.7 micro-s, well above the 60 ns to 300 ns average iit'eptimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗

NASA NTRS1979

A dc model for power switching transistors suitable for computer-aided design and analysis

The proposed dc model for bipolar junction power switching transistors is based on measurements which may be made with standard laboratory equipment. Those nonlinearities which are of importance to power electronics design are emphasized. Measurements procedures are discussed in detail. A model formulation adapted for use with a computer program is presented, and a comparison between actual and computer-generated results is made.

Wilson, P. M.↗

NASA NTRS1984

High voltage-high power components for large space power distribution systems

Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.

Renz, D. D.↗

NASA NTRS1984

High voltage-high power components for large space power distribution systems

Renz, D. D.↗

NASA NTRS1982

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

Bar-Chaim, N.↗

NASA NTRS1994

Observations of Single Event Failure in Power MOSFETS

The first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.

bipolar power transistors single event test burnou↗

NASA NTRS1994

Active-Pixel Cosmic-Ray Sensor

Cosmic-ray sensor comprises planar rectangular array of lateral bipolar npn floating-base transistors each of which defines pixel. Collector contacts of all transistors in each row connected to same X (column) line conductor; emitter contacts of all transistors in each column connected to same Y (row) line conductor; and current in each row and column line sensed by amplifier, output of which fed to signal-processing circuits.

Fossum, Eric R.↗

NASA NTRS1975

Power transistor performance tradeoffs

Recent advances in the understanding of bipolar device physics permit the derivation of a number of quantitative relationships which are useful for improving existing designs and also for assessing the feasibility of proposed devices. This paper describes three important tradeoffs which apply to the design and performance of high-voltage transistors in inverter circuits.

Hower, P. L.↗

NASA NTRS1970

Low-power integrated-circuit driver for ferrite-memory word lines

Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.

Katz, S.↗

NASA NTRS1970

Effect of filtering on noise and timing in nuclear particle detection

The relations between signal shaping, noise, and timing resolution in nuclear particle detection systems are examined in this paper. Mathematical analysis of five commonly used types of filters leads to numerical results for system noise components arising from sources in the preamplifier, detector, and bias resistors. These results are presented in the form of design curves for the various filters, showing the dependence of each output noise component on both the magnitude of the noise sources and the filter time constants. Three of the filters considered are simple RC types; the remaining two are combinations of delay lines and RC elements. The quantitative calculations specifically assume a silicon detector and a field-effect-transistor preamplifier. Those filters that exhibit bipolar step response are analyzed in terms of crossover timing resolution, based on the earlier noise calculations. Again, the results are summarized in sets of design curves for each filter. Finally, the comparative performance of the various filter types is discussed, and specific examples are given.

Gary, S. A.↗