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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

silicon carbide (SiC)↗

Destructive Single-Event Effects in Diodes

In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

single event effects (SEE); Schottky diode; heavy ↗

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Schottky Diodes↗

Single Event Effect Testing of the Analog Devices ADV212

The Analog Devices ADV212 was initially tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in July of 2013. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI), soft data errors classified as single event upsets (SEU), and, of particular concern, single event latch-ups (SEL). All error types occurred so frequently as to make accurate measurements of the exposure time, and thus total particle fluence, challenging. To mitigate some of the risk posed by single event latch-ups, circuitry was added to the electrical design to detect a high current event and automatically recycle power and reboot the device. An additional heavy-ion test was scheduled to validate the operation of the recovery circuitry and the continuing functionality of the ADV212 after a substantial number of latch-up events. As a secondary goal, more precise data would be gathered by an improved test method, described in this test report.

single event latch-ups (SEL)↗

Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.

proton testing↗

Single-Event Effect Testing of the Linear Technology LTC6103HMS8#PBF Current Sense Amplifier

The LTC6103HMS8#PBF (henceforth abbreviated as LTC6103) current sense amplifier from Linear Technology was tested for both destructive and non-destructive single-event effects (SEE) using the heavy-ion cyclotron accelerator beam at Lawrence Berkeley National Laboratory (LBNL) Berkeley Accelerator Effects (BASE) facility. During testing, the input voltages and output currents were monitored to detect single event latch-up (SEL) and single-event transients (SETs).

single-event effects (SEE)↗

Radiation Performance of Commercial SiGe HBT BiCMOS-High Speed Operational Amplifiers

We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS operational amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs. The SET cross-sections increase with increasing operating frequency. The LTC6400 exhibits a LET(sub th) < 7.4 MeV·sq cm/mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LET(sub th) < 4.4 MeV·sq cm/mg at 200 MHz; the LET(sub th) decreases with increasing frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz can erase several signal cycles. We al.so found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.

Chen, Dakai↗

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

High Voltage↗

Evaluation of System Reliability and Heavy Ion Angular Effects

Microsemi (Microchip) RTG4 embedded triple modular redundant (TMR) phase-locked-loop (PLL) SEU data is presented. SEU data analysis includes: 1) Evaluation of heavy-ion beam angular effects (rectangular parallel pipe (RPP) or no RPP), 2) Importance of finding linear energy transfer (LET) onset (L0), 3) Comparison of prediction rate techniques.

Space radiation environments↗

Wide-bandgap Semiconductors in Space: Appreciating the Benefits but Understanding the Risks

Dr. Jean-Marie Lauenstein, NASA Goddard Space Flight Center, will present the radiation challenges of adopting wide-bandgap semiconductors for space applications. Wide-bandgap devices are attractive for space applications due to improved performance such as faster switching speeds, lower power losses, and their ability to operate at higher temperature as compared with their silicon counterparts. Their tolerance to total ionizing dose levels (> 100 krad(Si)) further enhances the desirability of these technologies. This short course will focus on silicon carbide and gallium nitride power rectifying, switching, and RF devices as these technologies are now readily available commercially. The radiation hardness assurance issues presented by the heavy-ion radiation environment will be discussed.

Lauenstein, Jean-Marie↗

A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash

Single-event effects and total ionizing dose testing are described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results. Extraction of three-dimensional heavy-ion test data presents a unique visualization of angular effects in NAND flash. Pattern dependence differences between SLC and MLC mode are noted, along with slightly non-uniform angular cross-section results due to the complex volume. Finally, TID data under different operating and bias conditions shows that the failure point remains the higher-voltage erasure circuitry.

Flash Memory↗

Titan's Ionospheric Chemistry, Fullerenes, Oxygen, Galactic Cosmic Rays and the Formation of Exobiological Molecules on and within its Surfaces and Lakes

We discuss the formation of aerosols within Titan's thermosphere-ionosphere and the different chemical pathways. Negative ion measurements by the Cassini Plasma Spectrometer (CAPS) Electron Spectrometer (ELS) give evidence for formation of unsaturated anion carbon chains, while positive ion measurements of the Cassini Ion Neutral Mass Spectrometer (INMS) indicate formation of more aromatic cation hydrocarbons. There is presently no direct observational evidence for large neutral molecule growth in Titan's thermosphere-ionosphere. The hydrocarbon cations are expected to form Polycyclic Aromatic Hydrocarbons (PAH), those with the addition of nitrogen being called PAHNs. We theorize anion carbon chains can eventually become long enough to fold into fullerene C(60,70) carbon shells, of various charge states. Based on laboratory data the fullerenes can trap incoming O(sup +) magnetospheric ions that have relatively high energy collisions with the fullerenes and, once trapped, protect the oxygen atom from Titan's reducing thermosphere-ionosphere. The fullerenes can form into larger onion fullerenes and condense into larger embryo aerosols (i.e., m/q > 10,000 amu/q anions as observed by CAPS/ELS) eventually falling onto Titan's surface and precipitating to the bottom of its hydrocarbon lakes. Molecule production composed of H, C, N is known to occur in Titan's atmosphere with energy input from the magnetosphere, solar UV, and deeppenetrating irradiation from galactic cosmic rays (GCR). Space radiation effects by GCR irradiation of Titan's surface and lakes can lead to the manufacture of exobiological molecules with oxygen as the new ingredient. We have developed a model of galactic cosmic ray irradiation of Titan's atmosphere, surface, subsurface and bottoms of Titan lakes. GCR would provide further energy for processing of the aerosols into more complex organic forms such as tholins and precursor molecules for amino acids. A second process called hydrolysis then converts the precursor molecules into amino acids. Hydrolysis is provided via meteor impacts with size > 10 km and cryovolcanism both which can produce liquid water on Titan's surface for episodic periods > several 100 to 1000 years. Our model shows that GCR secondary particles can penetrate ~ 100 m below the ice surface (including the bottom of Titan's less dense hydrocarbon lakes ~ 150 m depths) and produce chemically significant dosages over very long timescales ~ 450 Myrs. The GCR model is combined with laboratory data from experiments in which dry methyl ices were irradiated to doses producing prebiotic amino acids such as glycine. The model calculations show glycine can form to ~ 2.5 ppb levels near the surface after ~450 Myrs of GCR proton irradiation and potentially to 5 ppb if heavy-ion GCRs up through Fe are included. If such molecules were detected, this would not only confirm this model but indicate that life forms different from ours may not be required.

Edward C. Sittler Jr↗

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗

Estimates of SEU rates from heavy ions in devices exhibiting dual-node susceptibility

A single-event effect (SEE) occurs when a single ionizing particle passing through an electronic device produces a detectable event in the device. The type of SEE most frequently discussed in the literature is a "single-node upset" problem in which an upset at a given node depends only on conditions seen by that node. In contrast, some devices are designed so that an upset becomes a "dual-node" problem in which a device upset depends on conditions simultaneously seen by two nodes. This report derives a method for estimating heavy-ion induced upset rates for the dual-node problem.

Edmonds, Larry D.↗