MOS field-effect-transistor technology
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packaging for computer storage devices
Boesenberg, W. A.↗
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Contamination of MOS field effect transistors.
Positive ion current emission by tungsten and molybdenum studied for influence of impurities on MOSFET transistors
Hoenig, S. A.↗
Second breakdown of double epitaxial transistors.
Second breakdown of transistors with diffused emitter, epitaxial collector and base, obtaining maximum operating current dependence on base width and resistivity
Ernick, F. G.↗
IR analysis of second breakdown modes in power transistors.
Power transistor reliability against second breakdown, locating breakdown by IR fast scan microscope and measuring breakdown voltage
Dostoomian, A. S.↗
The nonlinear theory of a class of transistor oscillators.
Nonlinear theory of class of transistor oscillators using Ebers-Moll large signal model and differential equation
Hester, D. L.↗
An MOS-transistor-driven laminated-ferrite memory.
High capacity random access magnetic memory storage device combining integrated array of MOS transistors and laminated ferrite memory planes
Gordon, I.↗
A method for determining and testing for second breakdown characteristics in transistors.
Test equipment for second breakdown characteristics of power transistors
Morris, J. K.↗
Eliminate power transistor second breakdown failures.
Power transistor second breakdown failures, discussing reliability improvement
Morris, J. K.↗
Linear-log counting-rate meter uses transconductance characteristics of a silicon planar transistor
Counting rate meter compresses a wide range of data values, or decades of current. Silicon planar transistor, operating in the zero collector-base voltage mode, is used as a feedback element in an operational amplifier to obtain the log response.
Eichholz, J. J.↗
Conceptual techniques for reducing parasitic current gain of lateral pnp transistors
Two techniques have been conceptually proposed as possible means of reducing parasitic beta in lateral p-n-p transistors. One method uses a degenerate substrate and high concentration P /plus/ guard-ring diffusion, another places the base contact at the center of an annular ring structure.
Gallagher, R. C.↗
Radiation tolerant silicon nitride insulated gate field effect transistors
Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.
Newman, P. A.↗
Modification to improve self-isolating transistor arrays
Fabrication process improves the size ratio and shape factor of the base region of self-isolating transistor arrays. Basic processing steps in the modified method include, sub-diffusion, epitaxial layer growth, isolation-diffusions, enhancement diffusions, aluminum interconnect deposition, and testing and packaging.
Farnsworth, D. L.↗
Lateral PNP bipolar transistor with aiding field diffusions
Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.
Gallagher, R. C.↗
Development of silicon nitride and cermet resistors for use in a binary counter, metal insulator field effect transistor circuit Final report, 1 Dec. 1966 - 31 Mar. 1968
Silicon nitride and cermet resistors for binary counter metal insulator field effect transistor circuit
Brown, G. A.↗
A survey of semiconductor materials and processes for thick-film field-effect transistor fabrication
Criteria applied to semiconductor materials and deposition processes for thick film, insulated gate field effect transistor fabrication
Chang, Y. F.↗
Radiation-induced nonlinear degradation of transistor gain Six month progress report, 4 Jan. - 4 Jul. 1968
Statistical analysis of data obtained with 1 MeV tests on transistors
Brown, R. R.↗
An investigation of the effects of radiation on silicon nitride insulated gate /MNS/ transistors Final report
Radiation effects on silicon nitride insulated gate field effect transistors
Frank, R.↗
Design and development of a high power, low saturation voltage, multi-chip silicon switching transistor Mid-term progress report
Encapsulation technique for multiple chip silicon switching transistors with silver-Teflon contacts
Stonebraker, E. R.↗