Orifice gross leak tester Patent
Test chambers with orifice and helium mass spectrometer for detecting leak rate of encapsulated semiconductor devices
Altshuler, T. L.↗
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Results for “SEMICONDUCTOR DEVICE”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Microchemical surface analysis by electron spectroscopy
Auger electron velocity analyzer for use with scanning electron microscope to identify low concentrations of elements on surfaces of semiconductor devices
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Evaluation of nondestructive tensile testing
Evaluation of nondestructive tensile testing of chip and wire bonds in semiconductor devices
Polcari, S. M.↗
Use a SEM on a production line
Scanning electron microscope for poor metallization detection in manufacturing cycle of semiconductor devices
Adolphsen, J. W.↗
High field CdS detector for infrared radiation
New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.
Tyagi, R. C.↗
Evaluation of nondestructive tensile testing
The results of a series of experiments performed in the evaluation of nondestructive tensile testing of chip and wire bonds are presented. Semiconductor devices were subjected to time-temperature excursions, static-load life testing and multiple pre-stressing loads to determine the feasibility of a nondestructive tensile testing approach. The report emphasizes the importance of the breaking angle in determining the ultimate tensile strength of a wire bond, a factor not generally recognized nor implemented in such determinations.
Bowe, J. J.↗
Using the scanning electron microscope on the production line to assure quality semiconductors
The use of the scanning electron microscope to detect metallization defects introduced during batch processing of semiconductor devices is discussed. A method of determining metallization integrity was developed which culminates in a procurement specification using the scanning microscope on the production line as a quality control tool. Batch process control of the metallization operation is monitored early in the manufacturing cycle.
Adolphsen, J. W.↗
Advanced technical developments in support of scientific experiments in space
A technique was developed for preparing solid state, lithium-drifted silicon detectors. Hollow cylindrical detectors were built and tested for possible use as anticoincidence shields to replace conventional plastic scintillators and photomultipliers. A fission cell was developed for the Pioneer F/G instruments and the IMP I subsystem. An electron current detector was developed for Jovian belt measurements of electron flux. A number of circuits and semiconductor devices was also developed.
Lamport, J. E.↗
A large granite stage and measuring microscope.
A stage and measuring microscope servocontrolled by a computer have been constructed. The travel of the stage is 0.5 x 0.5 m and the travel of the microscope objective is 7.5 cm. The measuring accuracy is 1 micron in the x-y plane and 5 microns along the z axis. The mechanical and optical construction of the stage and microscope, as well as the way in which the control electronics are organized, permit great flexibility of operation. Possible applications include the scanning and measuring of astronomical plates, the laying out of patterns of semiconductor devices of very large sizes, and the measurement of precision grids.
Alston-Garnjost, M.↗
An improved method for obtaining a normalized junction temperature for semiconductors: A concept
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining corresponding failure rate from graph.
Trivedi, S. N.↗
Hermetic-coaxial package design for microwave transistors
Semiconductor package has been developed for high power semiconductor devices that operate in the GHz-frequency range at several watts. Package includes stud, insulating ring, electrically conductive washer, insulating washer, braze ring, and cap. It is mechanically strong and can be used with variety of circuits.
Jacobson, D. S.↗
Reliability improvement of 1 mil aluminum wire bonds for semiconductors, technical performance summary
The reliability of semiconductor devices as influenced by the reliability of wire bonds used in the assembly of the devices is investigated. The specific type of failure dealt with involves fracture of wire bonds as a result of repeated flexure of the wire at the heel of the bond when the devices are operated in an on-off mode. The mechanism of failure is one of induced fracture of the wire. To improve the reliability of a chosen transistor, one-mil diameter wires of aluminum with various alloy additions were studied using an accelerated fatigue testing machine. In addition, the electroprobe was used to study the metallurgy of the wires as to microstructure and kinetics of the growth of insoluble phases. Thermocompression and ultrasonic bonding techniques were also investigated.
Source record↗
Reliability improvement of wire bonds subjected to fatigue stresses.
The failure of wire bonds due to repeated flexure when semiconductor devices are operated in an on-off mode has been investigated. An accelerated fatigue testing apparatus was constructed and the major fatigue variables, aluminum alloy composition, and bonding mechanism, were tested. The data showed Al-1% Mg wires to exhibit superior fatigue characteristics compared to Al-1% Cu or Al-1% Si and ultrasonic bonding to be better than thermocompression bonding for fatigue resistance. Based on these results highly reliable devices were fabricated using Al-1% Mg wire with ultrasonic bonding which withstood 120,000 power cycles with no failures.
Ravi, K. V.↗
Materials sciences research
Research projects involving materials research conducted by various international test facilities are reported. Much of the materials research is classified in the following areas: (1) acousto-optic, acousto-electric, and ultrasonic research, (2) research for elucidating transport phenomena in well characterized oxides, (3) research in semiconductor materials and semiconductor devices, (4) the study of interfaces and interfacial phenomena, and (5) materials research relevant to natural resources. Descriptions of the individual research programs are listed alphabetically by the name of the author and show all personnel involved, resulting publications, and associated meeting speeches.
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Research on radiation detectors, boiling transients, and organic lubricants
The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.
Source record↗
Gravitational effects of process-induced dislocations in silicon
Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.
Porter, W. A.↗
Efficiency of silicon solar cells as a function of base layer resistivity
This paper reports on a theoretical study of the limitations on silicon solar-cell efficiency for both n(+)-p and n(+)-p-p(+) type cells. Detailed calculations have been made of solar-cell operation using a general computer analysis program for semiconductor devices. The computer program, which simultaneously solves Poisson's equation and the electron and hole quasi-Fermi level equations, provides an accurate numerical solution of solar-cell operation without limiting assumptions or approximations. It is found that minority-carrier lifetime and heavy doping effects in the n(+) surface region present serious limitations to efficiency in low-resistivity silicon solar cells.
Dunbar, P. M.↗
Problems in photoresponse distribution measurement
Photoresponse distribution measurement by scanning a light spot across the surface of a semiconductor device is examined. The technqiue is used for solar cell characterization because the measured quantity is the direct expression of the distribution of the desired performance of the device. An apparatus for measuring the photoresponse distribution was set and used in the development of polysilicon thin film solar cells. A schmeatic diagram of the apparatus and an example of measurement are shown.
Minagawa, S.↗