SEE and TID of emerging non-volatile memories
We report on the SEE and TID tests of higher density flash memories. Stand-by currents and full functional tests were used to characterize the response of radiation effects.
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We report on the SEE and TID tests of higher density flash memories. Stand-by currents and full functional tests were used to characterize the response of radiation effects.
This paper describes a case study quantifying reliability and endurance results of two FRAM nonvolatile memories.
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This paper presents an evaluation of trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts.
An algorithm that automates the application of the alpha law in any SEE analysis is presented. This automation is essential for the widespread acceptance of the sophisticated cross section angular dependence model.
It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.
We have reported on initial SEE sensitivity of the full 49-core Maestro device. Supporting the low-level structures and qualitative system observation goals of phase 1 of testing. Observed sensitivities found to be consistent with Boeing predictions. Highlighted by the L1 data cache sensitivity which drives the rates on the current Maestro device. Presented details to the hardware and software setups that show where the limitations - highlighting future work. Key future work includes testing with memory and IO ports.
Radiation Effects Group investigates the effects of space radiation on present and future microelectronic and optoelectronic technologies, evaluate the risk of using them in specific space missions, and recommend component and design techniques for JPL and NASA programs to reduce reliability risk from space radiation.
An overview is presented of the space radiation environment and its effects on electrical, electronic, and electromechanical parts. Relevant test standards and guidelines are listed. Test standards and guidelines are necessary to ensure best practices, minimize and bound systematic and random errors, and to ensure comparable results from different testers and vendors. Test standards are by their nature static but exist in a dynamic environment of advancing technology and radiation effects research. New technologies, failure mechanisms, and advancement in our understanding of known failure mechanisms drive the revision or development of test standards. Changes to standards must be weighed against their impact on cost and existing part qualifications. There must be consensus on new best practices. The complexity of some new technologies exceeds the scope of existing test standards and may require development of a guideline specific to the technology. Examples are given to illuminate the value and limitations of key radiation test standards as well as the challenges in keeping these standards up to date.
We develop metrics for assessing the effectiveness of proton SEE data for bounding heavy-ion SEE susceptibility. The metrics range from simple geometric criteria requiring no knowledge of the test articles to bounds of SEE rates.
We cover a top-level introduction to hardness assurance (HA) from a robotic space system perspective, starting at the piece-part level. We discuss error sources inherent to presently-accepted HA practices and why they cause us to be risk-averse. We conclude by reviewing current proposals that move towards more risk-tolerant system design approaches as well as future challenges that will require these advanced techniques.
Although proton SEE testing can place constraints on some heavy-ion SEE susceptibilities, it is important to quantify residual risk that protons may not reveal all SEE susceptibilities in a system. We examine the relative strengths and limitations of proton and heavy-ion SEE testing and how these may be affected by technology scaling and high-Z materials in the device.
In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.
The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).
Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.
The purpose of this test is to assess the single event effects (SEE) and radiation susceptibility of the Intel Optane Memory device (SSD) containing the 3D Xpoint phase change memory (PCM) technology. This test is supported by the NASA Electronics Parts and Packaging Program (NEPP).
Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testing challenges and near-term plans for a broad survey of currently-available product lines.